A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on in...A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.展开更多
This paper reported a novel method of integrating bypass diodes into crystalline silicon solar cells.Bypass diodes which have the opposite p-n junction were formed by printing specific paste on the local surface of so...This paper reported a novel method of integrating bypass diodes into crystalline silicon solar cells.Bypass diodes which have the opposite p-n junction were formed by printing specific paste on the local surface of solar cells using screen printing,while infrared laser was applied to isolate the diode from the cell after firing.A module of crystalline silicon solar cells with integrated bypass diodes was fabricated and the I-V characteristics were measured under different shade conditions.The experimental results clearly showed that the integrated bypass diodes can effectively stabilize module's short circuit current while reduce the module power loss when shaded as well.展开更多
文摘A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.
基金supported by the Scientific and Technological Key Research Projects of Guangdong Province (Grant No. 2008A080800007)the Science & Research Program of Guangdong Province (Grant No. 2009B011100002)
文摘This paper reported a novel method of integrating bypass diodes into crystalline silicon solar cells.Bypass diodes which have the opposite p-n junction were formed by printing specific paste on the local surface of solar cells using screen printing,while infrared laser was applied to isolate the diode from the cell after firing.A module of crystalline silicon solar cells with integrated bypass diodes was fabricated and the I-V characteristics were measured under different shade conditions.The experimental results clearly showed that the integrated bypass diodes can effectively stabilize module's short circuit current while reduce the module power loss when shaded as well.
