A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many diffe...A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.展开更多
We propose a general method of designing phase-shifting algorithms for grating lateral shearing interferometry. The algorithms compensate for the zeroth-order effect error and phase-shifting error in varying degrees. ...We propose a general method of designing phase-shifting algorithms for grating lateral shearing interferometry. The algorithms compensate for the zeroth-order effect error and phase-shifting error in varying degrees. We derive a general expression of the phase-shifting algorithm in grating lateral shearing interferometer and introduce the corresponding design method. Based on the expression and method, four phase-shifting algorithms are designed with different phase-shifting errors to obtain high measurement accuracy. A new 13-frame phase-shifting algorithm is designed and simulated with a large zeroth-order effect. Simulation results verify the general expression and the corresponding design method.展开更多
文摘A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.
基金supported by the National Science and Technology Major Project,China(No.2009ZX02202005)
文摘We propose a general method of designing phase-shifting algorithms for grating lateral shearing interferometry. The algorithms compensate for the zeroth-order effect error and phase-shifting error in varying degrees. We derive a general expression of the phase-shifting algorithm in grating lateral shearing interferometer and introduce the corresponding design method. Based on the expression and method, four phase-shifting algorithms are designed with different phase-shifting errors to obtain high measurement accuracy. A new 13-frame phase-shifting algorithm is designed and simulated with a large zeroth-order effect. Simulation results verify the general expression and the corresponding design method.
