Earthquake disaster risk,as a typical social disaster risk,is one of the most important risks in modern Chinese society.This study gives definitions of the institution,describes the formation history,the connotations ...Earthquake disaster risk,as a typical social disaster risk,is one of the most important risks in modern Chinese society.This study gives definitions of the institution,describes the formation history,the connotations and development and analyzes its role in the control of major social risks caused by earthquakes.Finally,the paper presents recommendations for continuous improvement of this institution under the guidance of risk society theory,and for its application to the government reform and social governance.展开更多
This paper analyzes the fundamental frequency impedance presents a novel transmission line pilot protection scheme characteristic of a thyristor controlled series capacitor （TCSC） and based on fault component integr...This paper analyzes the fundamental frequency impedance presents a novel transmission line pilot protection scheme characteristic of a thyristor controlled series capacitor （TCSC） and based on fault component integrated impedance （FCII） calculated for a transmission line with TCSC and controllable shunt reactor （CSR）. The FCII is defined as the ratio of the sum of the fault component voltage phasors of a transmission line with TCSC and CSR to the sum of the fault component current phasors where all the phasors are determined at both line＇s terminals. It can be used to distinguish internal faults occurring on the line from external ones. If the fault is an external one the FCII reflects the line＇s capacitive impedance and has large value. If the fault is an internal one on the line the FCII reflects the impedance of the equivalent system and the line and is relatively small. The new pilot protection scheme can be easily set and has the fault phase selection ability and also it is not affected by the capacitive current and the fault transition resistance. It is not sensitive to compensation level and dynamics of TCSC and CSR. The effectiveness of the new scheme is validated against data obtained in ATP simulations and Northwest China 750 kV Project.展开更多
A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation...A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.展开更多
基金sponsored by the National Social Science Fund of China "Research on the Status,Efficiencies and the Policy on the National Significant Seismic Monitoring and Protection Regions"(11&ZD054)
文摘Earthquake disaster risk,as a typical social disaster risk,is one of the most important risks in modern Chinese society.This study gives definitions of the institution,describes the formation history,the connotations and development and analyzes its role in the control of major social risks caused by earthquakes.Finally,the paper presents recommendations for continuous improvement of this institution under the guidance of risk society theory,and for its application to the government reform and social governance.
基金supported by the National Natural Science Foundation of China (Grant Nos.50877061 and 51037005)
文摘This paper analyzes the fundamental frequency impedance presents a novel transmission line pilot protection scheme characteristic of a thyristor controlled series capacitor （TCSC） and based on fault component integrated impedance （FCII） calculated for a transmission line with TCSC and controllable shunt reactor （CSR）. The FCII is defined as the ratio of the sum of the fault component voltage phasors of a transmission line with TCSC and CSR to the sum of the fault component current phasors where all the phasors are determined at both line＇s terminals. It can be used to distinguish internal faults occurring on the line from external ones. If the fault is an external one the FCII reflects the line＇s capacitive impedance and has large value. If the fault is an internal one on the line the FCII reflects the impedance of the equivalent system and the line and is relatively small. The new pilot protection scheme can be easily set and has the fault phase selection ability and also it is not affected by the capacitive current and the fault transition resistance. It is not sensitive to compensation level and dynamics of TCSC and CSR. The effectiveness of the new scheme is validated against data obtained in ATP simulations and Northwest China 750 kV Project.
基金Project partially supported by the Zhejiang Provincial Nature Science Fund of China (Nos. Y107055 and Y1080546)the Semiconductor Manufacturing International Corp. (SMIC)
文摘A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.
