A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was pr...A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was proposed. The conventional capacitorless DRAM cell with single charge generating effect is either high speed or low power, while the proposed DG-FinFET （double-gate fin field effect transistor） cell employs the efficient integration of impact ionization and GIDL effects by coupling the front and back gates with optimal body doping profile and proper bias conditions, yielding high speed low power performance. The simulation results demonstrate ideal characteristics in both cell operations and power consumption. Low power consumption is achieved by using GIDL current at 0. luA when the coupling between the front and back gates restrains the impact ionization current in the first phase. The write operation of the cell is within Ins attributed to significant current of the impact ionization effect in the second phase. By shortening second phase, power consumption could be further decreased. The ratio of read ＂1＂ and read ＂0＂ current is more than 9.38E5. Moreover, the cell has great retention characteristics.展开更多
The emerging two-terminal memristor with a conductance-adjustable function under external stimulation is considered a strong candidate for use in artificial memory and electronic synapses. However, the stability, unif...The emerging two-terminal memristor with a conductance-adjustable function under external stimulation is considered a strong candidate for use in artificial memory and electronic synapses. However, the stability, uniformity, and power consumption of memristors are still challenging in neuromorphic computing. Here an Au/SnSe/graphene/SiO_(2)/Si memristor was fabricated, incorporating two-dimensional graphene with high thermal conductivity. The device not only exhibits excellent electrical characteristics(e.g., high stability,good uniformity and a high ROFF/RON ratio), but also can implement biological synaptic functions such as paired-pulse facilitation, short-term plasticity and long-term plasticity. Its set and reset power values can be as low as 16.7 and 2.3 nW,respectively. Meanwhile, the resistance switching mechanism for the device, which might be associated with the formation and rupture of a filamentary conducting path consisting of Sn vacancies, was confirmed by high-resolution transmission electron microscopy observations. The proposed device is an excellent candidate for use in high-density storage and lowpower neuromorphic computing applications.展开更多
文摘A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was proposed. The conventional capacitorless DRAM cell with single charge generating effect is either high speed or low power, while the proposed DG-FinFET （double-gate fin field effect transistor） cell employs the efficient integration of impact ionization and GIDL effects by coupling the front and back gates with optimal body doping profile and proper bias conditions, yielding high speed low power performance. The simulation results demonstrate ideal characteristics in both cell operations and power consumption. Low power consumption is achieved by using GIDL current at 0. luA when the coupling between the front and back gates restrains the impact ionization current in the first phase. The write operation of the cell is within Ins attributed to significant current of the impact ionization effect in the second phase. By shortening second phase, power consumption could be further decreased. The ratio of read ＂1＂ and read ＂0＂ current is more than 9.38E5. Moreover, the cell has great retention characteristics.
基金financially supported by the National Natural Science Foundation of China (51972094,61674050 and 61874158)the Outstanding Youth Project of Hebei Province (F2016201220)+3 种基金the Project of Science and Technology Activities for Overseas Researcher (CL201602)the Project of Distinguished Youth of Hebei Province (A2018201231)the Support Program for the Top Young Talents of Hebei Province (70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (SLRC2019018)。
文摘The emerging two-terminal memristor with a conductance-adjustable function under external stimulation is considered a strong candidate for use in artificial memory and electronic synapses. However, the stability, uniformity, and power consumption of memristors are still challenging in neuromorphic computing. Here an Au/SnSe/graphene/SiO_(2)/Si memristor was fabricated, incorporating two-dimensional graphene with high thermal conductivity. The device not only exhibits excellent electrical characteristics(e.g., high stability,good uniformity and a high ROFF/RON ratio), but also can implement biological synaptic functions such as paired-pulse facilitation, short-term plasticity and long-term plasticity. Its set and reset power values can be as low as 16.7 and 2.3 nW,respectively. Meanwhile, the resistance switching mechanism for the device, which might be associated with the formation and rupture of a filamentary conducting path consisting of Sn vacancies, was confirmed by high-resolution transmission electron microscopy observations. The proposed device is an excellent candidate for use in high-density storage and lowpower neuromorphic computing applications.
