The landslide disaster caused by the argillaceous interlayer not only destroys buildings,cultivated land,and roads but also seriously endangers human life and safety.This study concerns the mineral composition of sele...The landslide disaster caused by the argillaceous interlayer not only destroys buildings,cultivated land,and roads but also seriously endangers human life and safety.This study concerns the mineral composition of selected argillaceous interlayer and their strength characteristics.To study the mineral composition of argillaceous interlayers,8 kinds of samples in the southern Jiangsu region of China were analyzed utilizing X-ray diffraction(XRD).The repeated direct shear strength tests(RDST)were carried out on the undisturbed specimens of the argillaceous interlayer.The results show that the argillaceous interlayer with high content of kaolinite shows ductile failure mode,which means that there is no obvious residual strength in the shear process.The arrangement of mineral particles on the shear surface of the specimens after different shear displacements was observed under the scanning electron microscope(SEM).It was observed that mineral particles on the shear surface showed a more directional arrangement with the increase of shear displacement.Furthermore,the influence of shear direction on the argillaceous interlayer with completely oriented mineral particles was studied through numerical experiments with four shear strength mechanisms proposition proposed.The influence of the mineral arrangement on the action occasion and magnitude of dilatancy component of shear strength is clarified in the shear mechanism.展开更多
The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunne...The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(~1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.展开更多
基金Project(41672258) supported by the National Natural Science Foundation of ChinaProject(2018045) supported by the Land and Resources Science&Technology Project of Jiangsu Province,China。
文摘The landslide disaster caused by the argillaceous interlayer not only destroys buildings,cultivated land,and roads but also seriously endangers human life and safety.This study concerns the mineral composition of selected argillaceous interlayer and their strength characteristics.To study the mineral composition of argillaceous interlayers,8 kinds of samples in the southern Jiangsu region of China were analyzed utilizing X-ray diffraction(XRD).The repeated direct shear strength tests(RDST)were carried out on the undisturbed specimens of the argillaceous interlayer.The results show that the argillaceous interlayer with high content of kaolinite shows ductile failure mode,which means that there is no obvious residual strength in the shear process.The arrangement of mineral particles on the shear surface of the specimens after different shear displacements was observed under the scanning electron microscope(SEM).It was observed that mineral particles on the shear surface showed a more directional arrangement with the increase of shear displacement.Furthermore,the influence of shear direction on the argillaceous interlayer with completely oriented mineral particles was studied through numerical experiments with four shear strength mechanisms proposition proposed.The influence of the mineral arrangement on the action occasion and magnitude of dilatancy component of shear strength is clarified in the shear mechanism.
文摘The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(~1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.