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大鼠皮肤模拟光辐射烧伤与光冲量率
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作者 王志忠 鲁华玉 +2 位作者 赵青玉 高家峰 田嘉禾 《科学技术与工程》 2006年第7期858-860,共3页
研究光辐射造成重度、轻度烧伤时,不同光冲量率对烧伤深度的影响。应用模拟光辐射装置使大鼠皮肤烧伤。实验动物为wistar大鼠,18只分为受辐射30cal/cm2和10cal/cm2光冲量烧伤两组,各组又分为0.30cal/(cm·2s)、0.91cal/(cm·2s)... 研究光辐射造成重度、轻度烧伤时,不同光冲量率对烧伤深度的影响。应用模拟光辐射装置使大鼠皮肤烧伤。实验动物为wistar大鼠,18只分为受辐射30cal/cm2和10cal/cm2光冲量烧伤两组,各组又分为0.30cal/(cm·2s)、0.91cal/(cm·2s)和2.17cal/(cm2·s)三个光冲量率亚组,对大鼠皮肤造成不同的烧伤。伤后目视和光镜下观察比较皮肤及毛发的烧伤程度。结果:30cal/(cm·2s)的动物均造成重度烧伤,光冲量率对烧伤深度具有影响,造成的烧伤深度顺序为0.30cal/(cm2·s)深于0.91cal/(cm2·s)深严格要求2.17cal/(cm·2s);10cal/cm2组中,光冲量率0.30cal/(cm2·s)和2.17cal/(cm·2s)引起浅二度(后者较重),而0.91cal/(cm·2s)则造成了深二度烧伤。结论:造成重度烧伤时,在光冲量相同情况下,光冲量率低,烧伤重:造成轻度烧伤时,光冲量率高,烧伤重。 展开更多
关键词 烧伤 辐射 光冲量率
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Organic Photovoltaic Cells with Improved Performance Using Bathophenanthroline as a Buffer Layer 被引量:5
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作者 王娜娜 于军胜 +1 位作者 林慧 蒋亚东 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第1期84-88,I0002,共6页
The role of bathophenanthroline (Bphen) as a buffer layer inserted between fullerene (C60) and Ag cathode in organic photovoltaic (OPV) cell was discussed. By introducing Bphen as a buffer layer with thicknes fr... The role of bathophenanthroline (Bphen) as a buffer layer inserted between fullerene (C60) and Ag cathode in organic photovoltaic (OPV) cell was discussed. By introducing Bphen as a buffer layer with thicknes from 0 to 2.5 nm, the power conversion efficiency of the OPV cell based on copper phthalocyanine (CuPc) and C60 was increased from 0.87% to 2.25% under AM 1.5 solar illumination at an intensity of 100 mW/cm^2, which was higher than that of bathocuproine used as a buffer layer. The photocurrent-voltage characteristics showed that Bphen effectively improves electron transport through C60 layer into Ag electrode and leads to balance charge carrier transport capability. The influence of Bphen thickness on OPV cells was also investigated. Furthermore, the absorption spectrum shows that an additional Bphen layer enhances the light harvest capability of CuPc/C60. 展开更多
关键词 Organic photovoltaic cell Buffer layer Bathophenanthroline Charge carrier transport
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Coherent Interband and Intersubband Dynamics in Terahertz-Driven GaAs Quantum Wells
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作者 MI Xian-Wu PENG Jin-Zhang +1 位作者 LI De-Jun ZHAO He-Ping 《Communications in Theoretical Physics》 SCIE CAS CSCD 2005年第5X期941-947,共7页
We theoretically investigate the optical absorption spectra and charge density by subjecting a GaAs quantum well to both an intense terahertz (THz)-frequency driving field and an optical pulse within the theory of den... We theoretically investigate the optical absorption spectra and charge density by subjecting a GaAs quantum well to both an intense terahertz (THz)-frequency driving field and an optical pulse within the theory of density matrix. In presence of a strong THz field, the optical transitions in quantum well subbands are altered by the THz field. The alteration has a direct impact on the optical absorption and the charge density. The excitonic peak splitting and THz optical sideband in the absorption spectra show up when changing the THz field intensity and/or frequency. The Autler-Towns splitting is a result from the THz nonlinear dynamics of confined excitons. On the other hand, the carrier charge density is created as wave packets formed by coherent superposition of several eigenstates. The charge density exhibitsquantum beats for short pulses and/or wider wells and is modulated by the THz field. 展开更多
关键词 TERAHERTZ quantum well optical absorption
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Epitaxial growth and in-plane dielectric properties of orthorhombic HoMnO_3 films
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作者 GAO Ping WANG WeiTian +1 位作者 ZHANG Wei SUN YuMing 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2014年第10期1875-1878,共4页
Orthorhombic HoMnO3(HMO) thin films were grown epitaxially on LaAlO3(001) substrates by using pulsed laser deposition technique. The films showed perfect orthorhombic crystallization and were well-aligned with the sub... Orthorhombic HoMnO3(HMO) thin films were grown epitaxially on LaAlO3(001) substrates by using pulsed laser deposition technique. The films showed perfect orthorhombic crystallization and were well-aligned with the substrates. The in-plane dielectric constant and loss of HMO films were measured as functions of temperature(80–300 K) and frequency(120 Hz–100 kHz) by using coplanar interdigital electrodes. Two thermally activated dielectric relaxations were found, and the respective peaks shifted to higher temperatures as the measuring frequency increased. The in-plane dielectric properties of epitaxial orthorhombic HMO films were considered as universal dielectric response behavior, and the dipolar effects and the hopping conductivity induced by the charge carriers were used to explain the results. 展开更多
关键词 dielectric properties interdigital electrodes HoMnO3 thin films ORTHORHOMBIC
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