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基于光刻胶修正技术的石英锥形侧壁刻蚀工艺研究
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作者 刘丹 乌李瑛 +4 位作者 沈贇靓 张文昊 刘民 权雪玲 程秀兰 《半导体光电》 CAS 北大核心 2024年第4期606-611,共6页
基于光刻胶修正技术,采用两步刻蚀法对石英锥形侧壁的刻蚀工艺进行了研究。首先利用Ar,O_(2),CF_(4)气体对光刻胶刻蚀,将光刻胶的垂直侧壁修改为锥形侧壁。然后以此为掩膜实现光刻胶倾斜侧壁向石英材料的转移。两步刻蚀在同一个刻蚀腔... 基于光刻胶修正技术,采用两步刻蚀法对石英锥形侧壁的刻蚀工艺进行了研究。首先利用Ar,O_(2),CF_(4)气体对光刻胶刻蚀,将光刻胶的垂直侧壁修改为锥形侧壁。然后以此为掩膜实现光刻胶倾斜侧壁向石英材料的转移。两步刻蚀在同一个刻蚀腔室内完成。详细研究了光刻胶修正工艺中刻蚀气体流量、刻蚀功率、温度以及刻蚀时间等工艺参数对刻蚀速率、选择比以及刻蚀形貌的影响。通过综合优化工艺制备出刻蚀面光滑、倾斜角度为60°的石英刻蚀形貌。该工作为氧化硅以及其他材料的倾斜侧壁刻蚀工作提供了有力的参考。 展开更多
关键词 石英 光刻胶修正 反应离子刻蚀 倾斜侧壁
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A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm
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作者 赵宇航 朱骏 曹永峰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期889-892,共4页
The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical proximity effect. The CD and CD process window near the "dip",usually found near a pitch range of 1.1 to 1... The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical proximity effect. The CD and CD process window near the "dip",usually found near a pitch range of 1.1 to 1.4 wavelength/ NA (numerical aperture),is smaller when compared with other pitches. This is caused by inadequate imaging contrast for an unequal line and space grating. Although this effect is relatively well-known, its relationship with typical process condition parameters,such as the effective image blur caused by the photo-acid diffusion during the post exposure bake or the aberration in the imaging lens, has not been systematically studied. In this paper, we will examine the correlation between the image blur and the effect on the CD, including the decrease in the CD value (the depth of the "dip") and the CD process window. We find that both the decrease in the CD value and the focus latitude near the forbidden pitch correlate very well with the effective Gaussian image blur. Longer effective diffusion length correlates well with a smaller process window and a deeper CD "dip". We conclude that the dip depth is very sensitive to the change in image contrast. 展开更多
关键词 forbidden pitch effective resist diffusion length OPC OAI deep-UV
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