In this study, the authors have shown the power conversion efficiency of flexible organic solar cells. The structure of the device is PET/ITO/PEDOT： PSS/P3HT： PCBM/AI. P3HT （poly-3-hexylthiophene）. It was used as ...In this study, the authors have shown the power conversion efficiency of flexible organic solar cells. The structure of the device is PET/ITO/PEDOT： PSS/P3HT： PCBM/AI. P3HT （poly-3-hexylthiophene）. It was used as an electron donor, PCBM （[6, 6]-phenyl C6 l-butyric acid methyl ester） as an electron acceptor and PEDOT： PSS used as a HIL （hole injection layer）. These materials were deposited by spin coating method on the flexible substrates. Photolithography method is used to etch ITO. The electrical parameters of the fabricated cells were investigated by means of J （V）, FF （fill factor）, the efficiency （r/）, photocurrent and IPCE measurement. It was observed that 45% of the absorbed photons are converted into current. The results obtained using etching technology by photolithography is better than that obtained in the clean room.展开更多
An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates o...An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm·min-1 and 0.5nm·min-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.展开更多
Dicing of fabricated MEMS （microelectromechanical system） devices is sometimes a source of challenge, especially when devices are overhanging structures. In this work, a modified cleaving technique is developed to p...Dicing of fabricated MEMS （microelectromechanical system） devices is sometimes a source of challenge, especially when devices are overhanging structures. In this work, a modified cleaving technique is developed to precisely separate fabricated devices from a silicon substrate without requiring a dicing machine. This technique is based on DRIE （deep reactive ion etching） which is regularly used to make cleaving trenches in the substrate during the releasing stage. Other similar techniques require some extra later steps or in some cases a long HF soak. To mask the etching process, a thick photoresist is used. It is shown that by applying different UV （ultraviolate） exposure and developing times for the photoresist, the DRIE process could be controlled to etch specific cleaving trenches with less depth than other patterns on the photoresist. Those cleaving trenches are used to cleave the wafer later, while the whole wafer remains as one piece until the end of the silicon etching despite some features being etched all the way through the wafer at the same time. The other steps of fabricating and releasing the devices are unaffected. The process flow is described in details and some results of applying this technique for cleaving fabricated cantilevers on a silicon substrate are presented.展开更多
文摘In this study, the authors have shown the power conversion efficiency of flexible organic solar cells. The structure of the device is PET/ITO/PEDOT： PSS/P3HT： PCBM/AI. P3HT （poly-3-hexylthiophene）. It was used as an electron donor, PCBM （[6, 6]-phenyl C6 l-butyric acid methyl ester） as an electron acceptor and PEDOT： PSS used as a HIL （hole injection layer）. These materials were deposited by spin coating method on the flexible substrates. Photolithography method is used to etch ITO. The electrical parameters of the fabricated cells were investigated by means of J （V）, FF （fill factor）, the efficiency （r/）, photocurrent and IPCE measurement. It was observed that 45% of the absorbed photons are converted into current. The results obtained using etching technology by photolithography is better than that obtained in the clean room.
文摘An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm·min-1 and 0.5nm·min-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.
文摘Dicing of fabricated MEMS （microelectromechanical system） devices is sometimes a source of challenge, especially when devices are overhanging structures. In this work, a modified cleaving technique is developed to precisely separate fabricated devices from a silicon substrate without requiring a dicing machine. This technique is based on DRIE （deep reactive ion etching） which is regularly used to make cleaving trenches in the substrate during the releasing stage. Other similar techniques require some extra later steps or in some cases a long HF soak. To mask the etching process, a thick photoresist is used. It is shown that by applying different UV （ultraviolate） exposure and developing times for the photoresist, the DRIE process could be controlled to etch specific cleaving trenches with less depth than other patterns on the photoresist. Those cleaving trenches are used to cleave the wafer later, while the whole wafer remains as one piece until the end of the silicon etching despite some features being etched all the way through the wafer at the same time. The other steps of fabricating and releasing the devices are unaffected. The process flow is described in details and some results of applying this technique for cleaving fabricated cantilevers on a silicon substrate are presented.
