It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of th...It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.展开更多
The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be disti...The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.展开更多
A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED wit...A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED with SiO2 /ITO/Al reflective CBL deposited on naturally textured p-InGaN/p-GaN surface exhibited a light output power that was 7.6% and 18.5% higher than those of the textured LEDs with SiO2 CBL and without SiO2 CBL, respectively. The LED with backside hybrid reflector exhibited a light output power that was 30% higher than that of LED without the hybrid reflector. The enhancement in light output power is attributed to the improved current spreading performance via the SiO2 CBL, the Al omnidirectional metal reflector to prevent the light absorption by the opaque p-electrode pad, and the backside hybrid reflector to extract bottom-emitting light.展开更多
A magneto-optical sensor, using a dual quadrature polarimetfic processing scheme, was evaluated for current metering and protection applications in high voltage lines. Sensor calibration and resolution were obtained i...A magneto-optical sensor, using a dual quadrature polarimetfic processing scheme, was evaluated for current metering and protection applications in high voltage lines. Sensor calibration and resolution were obtained in different operational conditions using illumination in the 1550-nm band. Results obtained indicated the feasibility of interrogating such sensor via the optical ground wire （OPGW） link installed in standard high power grids. The polarimetric bulk optical current sensor also was theoretically studied, and the effects of different sources of error considering practical deployment were evaluated. In particular, the interference from external magnetic fields in a tree-phase system was analyzed.展开更多
文摘It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.
文摘The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.
基金supported by the Postdoctoral Science Foundation of Shanghai (Grant No. 12R21413900)the National Basic Research Project of China ("973" Project) (Grant No. 2011CB013103)
文摘A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED with SiO2 /ITO/Al reflective CBL deposited on naturally textured p-InGaN/p-GaN surface exhibited a light output power that was 7.6% and 18.5% higher than those of the textured LEDs with SiO2 CBL and without SiO2 CBL, respectively. The LED with backside hybrid reflector exhibited a light output power that was 30% higher than that of LED without the hybrid reflector. The enhancement in light output power is attributed to the improved current spreading performance via the SiO2 CBL, the Al omnidirectional metal reflector to prevent the light absorption by the opaque p-electrode pad, and the backside hybrid reflector to extract bottom-emitting light.
文摘A magneto-optical sensor, using a dual quadrature polarimetfic processing scheme, was evaluated for current metering and protection applications in high voltage lines. Sensor calibration and resolution were obtained in different operational conditions using illumination in the 1550-nm band. Results obtained indicated the feasibility of interrogating such sensor via the optical ground wire （OPGW） link installed in standard high power grids. The polarimetric bulk optical current sensor also was theoretically studied, and the effects of different sources of error considering practical deployment were evaluated. In particular, the interference from external magnetic fields in a tree-phase system was analyzed.
