The severe bulk recombination and sluggish oxygen evolution reaction(OER)dynamics of photoanodes severely restrict the application of photoelectrochemical(PEC)devices.To solve these two problems,crystallographic facet...The severe bulk recombination and sluggish oxygen evolution reaction(OER)dynamics of photoanodes severely restrict the application of photoelectrochemical(PEC)devices.To solve these two problems,crystallographic facet orientation and cocatalyst emergence with a high-quality photoanode/cocatalyst interface were realized through an air annealing-assisted strategy to treat atomic layer deposition(ALD)-modified SnSnanosheet arrays.Based on experimental observations and theoretical calculations,the reduced(001)crystal facet of SnSdecreases the recombination of photogenerated carriers in the bulk and improves the carrier separation of the photoanode.Moreover,the unexpectedly formed ZnTiOSfilm decreases the overpotential of the surface OER,reduces interface recombination,and extends the carrier lifetime.These synergistic effects lead to significantly enhanced PEC performance,with a high photocurrent density of 1.97 mA cm^(-2)at 1.23 V vs.reversible hydrogen electrode(RHE)and a low onset potential of 0.21 V vs.RHE,which are superior to reported mostly SnS-based photoanodes.展开更多
基金support from the National Key Research and Development Program of China(2021YFA1500800)the National Natural Science Foundation of China(52025028)+1 种基金the Priority Academic Program Development(PAPD)of Jiangsu Higher Education Institutionssupport of the National Natural Science Foundation of China(21973006)。
文摘The severe bulk recombination and sluggish oxygen evolution reaction(OER)dynamics of photoanodes severely restrict the application of photoelectrochemical(PEC)devices.To solve these two problems,crystallographic facet orientation and cocatalyst emergence with a high-quality photoanode/cocatalyst interface were realized through an air annealing-assisted strategy to treat atomic layer deposition(ALD)-modified SnSnanosheet arrays.Based on experimental observations and theoretical calculations,the reduced(001)crystal facet of SnSdecreases the recombination of photogenerated carriers in the bulk and improves the carrier separation of the photoanode.Moreover,the unexpectedly formed ZnTiOSfilm decreases the overpotential of the surface OER,reduces interface recombination,and extends the carrier lifetime.These synergistic effects lead to significantly enhanced PEC performance,with a high photocurrent density of 1.97 mA cm^(-2)at 1.23 V vs.reversible hydrogen electrode(RHE)and a low onset potential of 0.21 V vs.RHE,which are superior to reported mostly SnS-based photoanodes.
