A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques. The module includes ten typical continuous wave （cw） bars and the total output power can be up ...A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques. The module includes ten typical continuous wave （cw） bars and the total output power can be up to 368W at 48.6A. Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0. 926 4° and 8. 206° respectively. The light emitting area is limited in a square area of 18.3 mm × 11 mm. The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.展开更多
A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wi...A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.展开更多
In this letter,a theoretical model of radiation-balanced double clad fiber laser is presented.The characteristic of the laser with Yb doped double clad fiber is analyzed numerically.It is concluded that high output la...In this letter,a theoretical model of radiation-balanced double clad fiber laser is presented.The characteristic of the laser with Yb doped double clad fiber is analyzed numerically.It is concluded that high output laser power can be obtained by selecting output coupling mirror with lower reflectivity,improving Yb doped concentration and choosing fiber length. This result can help us to design radiation balanced fiber laser.展开更多
A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnOdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the ...A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnOdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the temperature-dependence parameters. Our results show that the exciton binding energy reduces linearly with temperature increasing. We find that the strain due to lattice mismatch and differential thermal expansion decreases with the temperature increasing.展开更多
The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intrigui...The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intriguing optical and electronic properties,making it an attractive photosensitive material for optoelectronic applications.However,the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS_(2)impedes its application in high-performance photodetectors.Herein,we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS_(2).In this device,1D Te induces in-plane strain in 2D WS_(2),which regulates the electronic structures of local WS_(2)and gives rise to type-Ⅱ band alignment in the horizontal direction.Moreover,the vertical heterojunction built of 2D WS_(2)and 1D Te introduces a high photoconductive gain.Benefiting from these two effects,the transfer of photogenerated carriers is optimized,and the proposed photodetector exhibits high sensitivity(photoresponsivity of ~27.7 A W^(-1),detectivity of 9.5×10^(12)Jones,and short rise/decay time of 19.3/17.6 ms).In addition,anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved.This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties,opening up a new avenue towards constructing multifunctional optoelectronic devices.展开更多
We have set up a novel system for shaping the Gaussian laser beams into super-Gaussian beams.The digital micro-mirror device(DMD)is able to modulate the laser light spatially through binary-amplitude modulation mechan...We have set up a novel system for shaping the Gaussian laser beams into super-Gaussian beams.The digital micro-mirror device(DMD)is able to modulate the laser light spatially through binary-amplitude modulation mechanism.With DMD,the irradiance of the laser beam can be redistributed flexibly and various beams with different intensity distribution can be produced.A super-Gaussian beam has been successfully shaped from the Gaussian beam with the use of DMD.This technique will be widely applied in lithography,quantum emulation and holographic optical tweezers which require precise control of beam profile.展开更多
文摘A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques. The module includes ten typical continuous wave （cw） bars and the total output power can be up to 368W at 48.6A. Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0. 926 4° and 8. 206° respectively. The light emitting area is limited in a square area of 18.3 mm × 11 mm. The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.
基金This work is supported by the National Natural Science Founda-tion of China (No. 60536030) the National High TechnologyResearch and Development Program of China (No.2005AA311030)
文摘A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.
基金This project was supported by Foundation of China Academy ofEngineering Physics under Grant NO.2004R0205 .
文摘In this letter,a theoretical model of radiation-balanced double clad fiber laser is presented.The characteristic of the laser with Yb doped double clad fiber is analyzed numerically.It is concluded that high output laser power can be obtained by selecting output coupling mirror with lower reflectivity,improving Yb doped concentration and choosing fiber length. This result can help us to design radiation balanced fiber laser.
基金Foundationitem:Project supported by the National Natural Sci-ence Foundation of China(60166002)
文摘A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnOdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the temperature-dependence parameters. Our results show that the exciton binding energy reduces linearly with temperature increasing. We find that the strain due to lattice mismatch and differential thermal expansion decreases with the temperature increasing.
基金supported by the National Natural Science Foundation of China(61805044,62004071 and 11674310)the Key Platforms and Research Projects of Department of Education of Guangdong Province(2018KTSCX050)+1 种基金Guangdong Provincial Key Laboratory of Information Photonics Technology(2020B121201011)"The Pearl River Talent Recruitment Program"(2019ZT08X639)。
文摘The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intriguing optical and electronic properties,making it an attractive photosensitive material for optoelectronic applications.However,the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS_(2)impedes its application in high-performance photodetectors.Herein,we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS_(2).In this device,1D Te induces in-plane strain in 2D WS_(2),which regulates the electronic structures of local WS_(2)and gives rise to type-Ⅱ band alignment in the horizontal direction.Moreover,the vertical heterojunction built of 2D WS_(2)and 1D Te introduces a high photoconductive gain.Benefiting from these two effects,the transfer of photogenerated carriers is optimized,and the proposed photodetector exhibits high sensitivity(photoresponsivity of ~27.7 A W^(-1),detectivity of 9.5×10^(12)Jones,and short rise/decay time of 19.3/17.6 ms).In addition,anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved.This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties,opening up a new avenue towards constructing multifunctional optoelectronic devices.
基金supported by the National Natural Science Foundation of China(Grant No.60974038)the Project of Provincial Teaching Research in Anhui Institutions of Higher Education(Grant No.2012jyxm006)
文摘We have set up a novel system for shaping the Gaussian laser beams into super-Gaussian beams.The digital micro-mirror device(DMD)is able to modulate the laser light spatially through binary-amplitude modulation mechanism.With DMD,the irradiance of the laser beam can be redistributed flexibly and various beams with different intensity distribution can be produced.A super-Gaussian beam has been successfully shaped from the Gaussian beam with the use of DMD.This technique will be widely applied in lithography,quantum emulation and holographic optical tweezers which require precise control of beam profile.
