In order to improve the test accuracy of CCD,a new type of CCD device is proposed.Several columns(rows) of photoelectric diodes(PDs) are combined together,and staggered with the distance of H1=H/N,where H is the space...In order to improve the test accuracy of CCD,a new type of CCD device is proposed.Several columns(rows) of photoelectric diodes(PDs) are combined together,and staggered with the distance of H1=H/N,where H is the space between two adjacent PDs,and N is the number of columns(rows).The photoelectric signals are collected simultaneously by multi-channel A/D,and the accurate measurement result is obtained through appropriate signal processing.Without changing the size or space of PDs,more photographic pixels are arranged in the given direction within a finite length.Diameters of three standard poles are measured by a single CCD and two staggered CCDs,respectively with length of 30 mm and diameters of 5 mm,8 mm and 12 mm,respectively.The results show that the accuracy of double staggered CCDs is two times of that of single CCD.The new type of CCDs can avoid the impact of PD space theoretically and higher measurement accuracy can be obtained.展开更多
Based on Fermi’s golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism ofstrained Si/(111)Si1 xGexwas established, including ionized impurity, acoustic phonon, non-polar ...Based on Fermi’s golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism ofstrained Si/(111)Si1 xGexwas established, including ionized impurity, acoustic phonon, non-polar optical phonon and totalscattering rate models. It was found that the total scattering rate of the hole in strained Si/(111)Si1 xGexdecreased obviouslywith the increasing stress when energy was 0.04 eV. In comparison with one of the unstrained Si, the total hole scattering rateof strained Si/(111)Si1 xGexdecreased about 38% at most. The decreasing hole scattering rate enhanced the hole mobility instrained Si materials. The result could provide valuable references to the research on hole mobility of strained Si materials andthe design of PMOS devices.展开更多
基金supported by the National Natural Science Foundation of China (No.51005188)the Fund of Key Laboratory of Manufacturing and Automation of Xihua University (No.SZJJ2009-023)the University Talent Foundation of Xihua University (No.R0720221)
文摘In order to improve the test accuracy of CCD,a new type of CCD device is proposed.Several columns(rows) of photoelectric diodes(PDs) are combined together,and staggered with the distance of H1=H/N,where H is the space between two adjacent PDs,and N is the number of columns(rows).The photoelectric signals are collected simultaneously by multi-channel A/D,and the accurate measurement result is obtained through appropriate signal processing.Without changing the size or space of PDs,more photographic pixels are arranged in the given direction within a finite length.Diameters of three standard poles are measured by a single CCD and two staggered CCDs,respectively with length of 30 mm and diameters of 5 mm,8 mm and 12 mm,respectively.The results show that the accuracy of double staggered CCDs is two times of that of single CCD.The new type of CCDs can avoid the impact of PD space theoretically and higher measurement accuracy can be obtained.
基金supported by the National Ministries and Commissions(Grant Nos. 51308040203, 9140A08060407DZ0103 and 6139801)the Fundamental Research Funds for the Central Universities (Grant No.72105499)
文摘Based on Fermi’s golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism ofstrained Si/(111)Si1 xGexwas established, including ionized impurity, acoustic phonon, non-polar optical phonon and totalscattering rate models. It was found that the total scattering rate of the hole in strained Si/(111)Si1 xGexdecreased obviouslywith the increasing stress when energy was 0.04 eV. In comparison with one of the unstrained Si, the total hole scattering rateof strained Si/(111)Si1 xGexdecreased about 38% at most. The decreasing hole scattering rate enhanced the hole mobility instrained Si materials. The result could provide valuable references to the research on hole mobility of strained Si materials andthe design of PMOS devices.
