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Synthesis of nonlinear optical fluorinated polyimide/inorganic composites for photonic devices
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作者 李国元 任力 《中国有色金属学会会刊:英文版》 CSCD 2006年第B01期154-158,共5页
A nonlinear optical (NLO) active alkoxysilane chromophore (SGDR1) was synthesized. A fluorinated polyimide/SGDR1 composite was prepared to improve the poor temporal stability of second-order NLO effects of the reporte... A nonlinear optical (NLO) active alkoxysilane chromophore (SGDR1) was synthesized. A fluorinated polyimide/SGDR1 composite was prepared to improve the poor temporal stability of second-order NLO effects of the reported poled sol-gel film. The poled composite film was characterized by FTIR, DSC, TGA and UV-Vis. The composite displays good hydrophobic properties, high glass transition temperature (266 ℃), and high decomposition temperature (433 ℃). The second harmonic coefficient d33 of the composite was measured to be 16.77 pm/V by using maker fringe technique. The new NLO composite exhibits 85 % of the original d33 over 720 h at 100 ℃ and possesses much better stability than the reported sol-gel film. 展开更多
关键词 光子学装置 氟化聚酰亚胺/无机物复合材料 合成 非线性光材料
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GaAs/AlGaAs quantum well infrared photodetector with low noise
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作者 DIENG Jun WANG Bin +2 位作者 HAN Jun LI Jian-jun SHEN Guang-di 《Optoelectronics Letters》 EI 2005年第1期37-39,共3页
A novel kind of multi-quantum well infrared photodetector(QWlP) is presented. In the new structure device,a p-type contact layer has been grown on the top of the conventional structure of QWlP,then a small tunneling... A novel kind of multi-quantum well infrared photodetector(QWlP) is presented. In the new structure device,a p-type contact layer has been grown on the top of the conventional structure of QWlP,then a small tunneling current is instead of the large compensatory current,which made the device low dark current and low noise characteristics. The measured result of dark current is consistent with the calculated result, and the noise of the new structure QWIP is decreased to one third of the conventional QWlP. 展开更多
关键词 红外线探测器 量子结构 补偿装置 器件 低噪性
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