一种计算和分析二维光子晶体缺陷模式的方法

通过改进时域有限差分(FDTD)法,计算和分析了二维光子晶体的缺陷模式。运用一维时域有限差分算法和线性插值法在总场散射场(TF-SF)连接边界引入入射平面波,采用完全匹配层(PML)技术对外行波进行了有效吸收。计算和分析结果表明,在光子晶体非对称方向入射的平面波能激发所有的缺陷模式,选取合适的探测点位置收集电场值,经快速傅里叶变换(FFT)能得到所有的共振峰值。另外,采用该方法研究了二维正方介质柱光子晶体缺陷模的共振频率与缺陷介质柱半径和介电常量之间的关系。结果表明通过改变缺陷的半径和介电常量大小可以在光子晶体禁带中一定的范围内调节缺陷模式的共振频率大小。

用紧束缚方法描述光子晶体缺陷耦合的共振频率移动

通常采用含两个耦合参数的紧束缚近似,就能很好地描述光子晶体缺陷因耦合而导致的共振频率分裂.然而,缺陷耦合造成的共振频率移动,即包含奇数个缺陷的耦合系统的中央共振频率位置与原来单缺陷时的共振频率位置存在差异,则只有采用含三个耦合参数的严格紧束缚方法才能正确描述.根据耦合参数与共振频率的关系,利用三缺陷耦合系统的模拟计算结果确定了三个耦合参数的具体值,从而在理论上能够预言由任意个缺陷构成的耦合系统的共振频率的移动和分裂.理论预言与基于有限时域差分法的数值计算完全相符.

含复合缺陷层的光子晶体的光学特性

运用传输矩阵法研究了在一维光子晶体中插入缺陷层的透光特性。在无缺陷层的一维光子晶体中能产生467～510 nm、1 279～1 715 nm两处明显的光子带隙。重点研究了插入缺陷层后,在1 279～1 715 nm的光子带隙中缺陷层厚度和入射角度大小分别与透射光谱变化的关系。研究发现:缺陷模的位置对入射角变化很敏感;出现缺陷模的数量和插入缺陷层的数量相同;一维光子晶体厚度的增大不会改变缺陷模的数量和位置,只改变透射峰的宽度和透射率。

平板光子晶体微腔缺陷模的计算

采用时域有限差分方法结合群论知识,得到平板光子晶体微腔的缺陷模分布.采用对称化边界条件,首先通过宽频脉冲求解微腔所具有的缺陷频率,其次,对于确定缺陷频率,采用窄频脉冲保证只能激发所要求解的一个模式,将空间的电磁场值进行离散傅立叶变换求解其模场分布.计算结果表明,该方法能求解出微腔所有的缺陷模式.

多通道光子晶体器件设计

一维光子晶体缺陷模的光谱特性与缺陷模的结构紧密相关。当缺陷模中包含有多个缺陷时,将导致光子禁带中出现多个分立的缺陷能级,形成多个透射光通道。利用一维光子晶体缺陷模这一光谱特性设计了红外谱段的三通道光子晶体器件。

光子晶体技术——(四)光子晶体光无源器件

介绍了基于二维(2 D)光子晶体平板的光子晶体滤波器和波长解复用器的基本工作原理、设计和制作技术。

基于粒子群算法的一维光子晶体滤波器性能优化

在一维光子晶体带隙内引入镜像缺陷,能够在特定位置形成一个尖锐的透射峰。为了获得1 550 nm中心波长处的窄带透射和高的品质因数,采用粒子群优化算法(PSO)对介质厚度进行优化,当介质层厚度d1=139 nm,d2=222 nm时,在1 550 nm波长处,获得0.95的透射率和135的品质因数。

光学晶体、液晶

O734 2003021448Tm:YVO4晶体的光谱参数计算=Calculation of spectroscopicpropcrties of Tm:YVO4 crystals[刊,中]/宋峰（南开大学光子学中心.天津（300071））,郭红沧…//光谱学与光谱分析.—2002,22（1）.—1-4由测量的Tm:YVO4晶体的吸收光谱,考虑到单轴晶体在各个方向上的吸收不同和折射率随波长的变化,根据Judd-Ofelt理论计算了Tm3+在YVO4中的强度参数、各个能级的振子强度、自发辐射几率、荧光分支比、积分发射截面等参数。强度参数为Ω2=1.9416×10-2（cm2）,Ω4=0.1568×10-20（cm2）,Ω6=0.3963×10-20（cm2）。计算结果表明,1D2→3F4的跃迁几率远大于1D2向其他各个能级的跃迁几率。图1表4参15（于晓光）O734

Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals

The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Padé approximation.The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated.The resonant frequencies and quality factors are calculated for PCs with different defects.The numerical results show that it is possible to modulate the location,width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.

Effects of negative index medium defect layers on the transmission properties of one-dimensional photonic crystal

The photonic band gap structure of 1D photonic crystal with a negative index medium defect layer is studied by using the transfer matrix method. Investigations show that the introdufion of negative index medium defect layer and the increase of the negative index value will result in an extension of the band gap. Moreover, by increasing the negative index, the width of defect layer and the numbers of period photonic crystal, the width of defect modes will be narrowed, which is advantaged to obtain optical filters with narrow band. Finally, the effects of absorption on the properties of band gap and on defect modes have been discussed.

Defect in photonic crystal with negative index material

The transmission property of the photonic crystal containing negative index material is analyzed by means of transfer matrix method.It is demonstrated that a defect mode appears in the conventional Bragg gap and the defect mode is sensitive to the position of the defect cell.For the first time to our knowledge we introduce two defects into such a structure and discuss the dependence of the transmission on the interval of the two defect cells.It is found that a wide degenerate defect mode appears in the Bragg gap,and this degenerate defect mode splits into two different defect modes when the two defect cells become closer.

Defects in Tm^(3+)/Yb^(3+)-doped YVO_4 Crystals

The microscopic defects have been investigated for crystal Tm3+/Yb3+:YVO4. These defects mainly include the inclusions (solid inclusions, bubbles and inclusions of the liquid phase), dendrites and growth stripes. They are caused by in-pure raw materials, unstable growth conditions, super-cooling component and so on. Tm3+/Yb3+:YVO4 crystals of large size and excellent optical quality are grown by improving the growth conditions to eliminate these defects.

Position Dependent Spontaneous Emission Spectra of a Λ-Type Atomic System Embedded in a Defective Photonic Crystal

We investigate the position dependent spontaneous emission spectra of a A-type three-level atom with one transition coupled to the free vacuum reservoir and the other one coupled to a double-band photonic band gap reservoir with a defect mode in the band gap. It is shown that, for the atom at the defect location, we have a two-peak spectrum with a wide dark line due to the strong coupling between the atom and the defect mode. While, when the atom is far from the defect location （or in the absence of the defect mode）, the spectrum has three peaks with two dark lines due to the coupling between the atom and the photonic band gap reservoir with the largest density of states near the band edges. On the other hand, we have a four-peak spectrum for the atom at the space in between. Moreover, the average spontaneous emission spectra of the atoms uniformly embedded in high dielectric or low dielectric regions are described. It is shown that the atoms embedded in high （low） dielectric regions far from the defect location, effectively couple to the modes of the lower （upper） photonic band. However, the atoms embedded in high dielectric or low dielectric regions at the defect location, are coupled mainly to the defect modes. While, the atoms uniformly embedded in high （low） dielectric regions with a normal distance from the defect location, are coupled to both of defect and lower （upper） photonic band modes.

Characteristics of tunable micro-cavity based on one-dimensional photonic crystal doping KTP as defect layer

The tunable micro-cavity based on one-dimensional （ID） photonic crystal doped by KTP is designed. The optical transmission properties in the doped one-dimensional defect photonic crystals are analyzed using transfer matrix method （TMM）. According to the electro-optic effect, the refractive index ellipsoid equation is established with the applied alternating current at both coordinate axes, and the characteristics of temperature-optics and modulation are studied. Numerical calculations and experimental results show that the tuning range is -40 nm.

Angular tuning of defect modes spectra for one dimensional photonic crystal filters with a liquid crystal layer

A tunable photonic crystal filter with a twisted nematic liquid crystal layer is proposed. The defect modes spectra with varying incident angles are discussed in detail by 4×4 matrix method. The results show that the defect modes are mainly decided by the applied voltage when the incident angle is smaller than 8°. As the incident angle further increases, the band gap and the defect modes shift toward the shorter wavelength side, and the changes of the two modes are different, In the lower voltage range, the defect modes can be tuned not only by the applied voltage but also by the incident angle. In the higher voltage range, the defect modes can be further tuned by varying incident angle and the different modes can be separated from each other by a bip incident anple.