利用蒙特卡罗程序 EGS4 ,针对几种特定的γ光子谱 ,计算了特定形状的 Li F固体电离室中空腔辐射敏感元件 L i FTLD的吸收剂量 -光子注量转换因子 ;计算结果表明 ,该转换因子的不确定度主要取决于谱的不确定度 ;通过对单能光子源的蒙特...利用蒙特卡罗程序 EGS4 ,针对几种特定的γ光子谱 ,计算了特定形状的 Li F固体电离室中空腔辐射敏感元件 L i FTLD的吸收剂量 -光子注量转换因子 ;计算结果表明 ,该转换因子的不确定度主要取决于谱的不确定度 ;通过对单能光子源的蒙特卡罗计算结果与解析公式计算结果的比较 ,证明该方法是可靠的 。展开更多
利用强场近似(Strong field approximation,SFA)方法研究氢负离子(H^-)在强激光场中双光子电离的能量谱,所得到的电离谱随角度的变化规律与实验结果符合得很好.进一步的研究表明,H^-离子在强激光场中双光子电离的能量谱与有质动力能有关...利用强场近似(Strong field approximation,SFA)方法研究氢负离子(H^-)在强激光场中双光子电离的能量谱,所得到的电离谱随角度的变化规律与实验结果符合得很好.进一步的研究表明,H^-离子在强激光场中双光子电离的能量谱与有质动力能有关.激光场强度越大,光电子的有质动力能也越大,能量谱向左移动越明显.我们的结果表明,使用强场近似是一种研究负离子在强激光场中电离过程的有效方法.展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
We report on the performance improvement of long-wave infrared quantum cascade lasers(LWIR QCLs)by studying and optimizing the anti-reflection(AR)optical facet coating.Compared to the Al2O3 AR coat⁃ing,the Y_(2)O_(3)A...We report on the performance improvement of long-wave infrared quantum cascade lasers(LWIR QCLs)by studying and optimizing the anti-reflection(AR)optical facet coating.Compared to the Al2O3 AR coat⁃ing,the Y_(2)O_(3)AR coating exhibits higher catastrophic optical mirror damage(COMD)level,and the optical facet coatings of both material systems have no beam steering effect.A 3-mm-long,9.5-μm-wide buried-heterostruc⁃ture(BH)LWIR QCL ofλ~8.5μm with Y_(2)O_(3)metallic high-reflection(HR)and AR of~0.2%reflectivity coating demonstrates a maximum pulsed peak power of 2.19 W at 298 K,which is 149%higher than that of the uncoated device.For continuous-wave(CW)operation,by optimizing the reflectivity of the Y_(2)O_(3)AR coating,the maximum output power reaches 0.73 W,which is 91%higher than that of the uncoated device.展开更多
Energy transfer is ubiquitous in natural and artificial lightharvesting systems,and coherent energy transfer,a highly efficient energy transfer process,has been accepted to play a vital role in such systems.However,th...Energy transfer is ubiquitous in natural and artificial lightharvesting systems,and coherent energy transfer,a highly efficient energy transfer process,has been accepted to play a vital role in such systems.However,the energy oscillation of coherent energy transfer is exceedingly difficult to capture because of its evanescence due to the interaction with a thermal environment.Here a microscopic quantum model is used to study the time evolution of electrons triggered energy transfer between coherently coupled donoracceptor molecules in scanning tunneling microscope(STM).A series of topics in the plasmonic nanocavity(PNC)coupled donor-acceptor molecules system are discussed,including resonant and nonresonant coherent energy transfer,dephasing assisted energy transfer,PNC coupling strength dependent energy transfer,Fano resonance of coherently coupled donor-acceptor molecules,and polariton-mediated energy transfer.展开更多
A mathematical model of quantum noise having much effect on the low light imaging system is set up. To simulate the quantum noise, the random numbers obeying noise distribution must be formed and are weighted on the...A mathematical model of quantum noise having much effect on the low light imaging system is set up. To simulate the quantum noise, the random numbers obeying noise distribution must be formed and are weighted on the basis of the model created. Three uniform random sequences are built by the linear congruential method, of which two are used to form integer number and decimal fraction parts of the new random sequence respectively and the third to shuffle the new sequence. And then a Gauss sequence is formed out of uniform distribution by a function transforming method. It actualizes the simulation in real time of quantum noise in the low light imaging system, where video flow is extracted in real time, the noise summed up and played back side by side with the original video signs by a simulation software.展开更多
A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher...A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.展开更多
To achieve a new type of carbon-based quantum dots with unique photoluminescence PL a simple approach for fabrication of graphene quantum dots GQDs with oxygen-rich groups was developed via the hydrothermal reaction b...To achieve a new type of carbon-based quantum dots with unique photoluminescence PL a simple approach for fabrication of graphene quantum dots GQDs with oxygen-rich groups was developed via the hydrothermal reaction by using graphene oxides GOs as a precursor. Transmission electron microscope TEM and atomic force microscope AFM characterizations confirmed that the sizes and heights of GQDs were 5.02±0.92 nm and 0.6 nm respectively.A strong PL emission exhibited unique excitation wavelength dependent features.Also the carbene-like free zigzag edge sites were proposed to be the origin of the strong PL emission.The GQDs were demonstrated to be a superior probe for Fe3＋ detection in aqueous solution with a high sensitivity and feasibility due to the special coordinate interaction between Fe3＋and the phenolic hydroxyl group at GQDs.展开更多
The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain...The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.展开更多
Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor depositi...Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180″ and 185″ for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405 9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.展开更多
文摘利用蒙特卡罗程序 EGS4 ,针对几种特定的γ光子谱 ,计算了特定形状的 Li F固体电离室中空腔辐射敏感元件 L i FTLD的吸收剂量 -光子注量转换因子 ;计算结果表明 ,该转换因子的不确定度主要取决于谱的不确定度 ;通过对单能光子源的蒙特卡罗计算结果与解析公式计算结果的比较 ,证明该方法是可靠的 。
文摘利用强场近似(Strong field approximation,SFA)方法研究氢负离子(H^-)在强激光场中双光子电离的能量谱,所得到的电离谱随角度的变化规律与实验结果符合得很好.进一步的研究表明,H^-离子在强激光场中双光子电离的能量谱与有质动力能有关.激光场强度越大,光电子的有质动力能也越大,能量谱向左移动越明显.我们的结果表明,使用强场近似是一种研究负离子在强激光场中电离过程的有效方法.
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
基金Supported by the National Natural Science Foundation of China(12393830)。
文摘We report on the performance improvement of long-wave infrared quantum cascade lasers(LWIR QCLs)by studying and optimizing the anti-reflection(AR)optical facet coating.Compared to the Al2O3 AR coat⁃ing,the Y_(2)O_(3)AR coating exhibits higher catastrophic optical mirror damage(COMD)level,and the optical facet coatings of both material systems have no beam steering effect.A 3-mm-long,9.5-μm-wide buried-heterostruc⁃ture(BH)LWIR QCL ofλ~8.5μm with Y_(2)O_(3)metallic high-reflection(HR)and AR of~0.2%reflectivity coating demonstrates a maximum pulsed peak power of 2.19 W at 298 K,which is 149%higher than that of the uncoated device.For continuous-wave(CW)operation,by optimizing the reflectivity of the Y_(2)O_(3)AR coating,the maximum output power reaches 0.73 W,which is 91%higher than that of the uncoated device.
基金supported by the State Scholarship Fund organized by the China Scholarship Council(CSC).
文摘Energy transfer is ubiquitous in natural and artificial lightharvesting systems,and coherent energy transfer,a highly efficient energy transfer process,has been accepted to play a vital role in such systems.However,the energy oscillation of coherent energy transfer is exceedingly difficult to capture because of its evanescence due to the interaction with a thermal environment.Here a microscopic quantum model is used to study the time evolution of electrons triggered energy transfer between coherently coupled donoracceptor molecules in scanning tunneling microscope(STM).A series of topics in the plasmonic nanocavity(PNC)coupled donor-acceptor molecules system are discussed,including resonant and nonresonant coherent energy transfer,dephasing assisted energy transfer,PNC coupling strength dependent energy transfer,Fano resonance of coherently coupled donor-acceptor molecules,and polariton-mediated energy transfer.
文摘A mathematical model of quantum noise having much effect on the low light imaging system is set up. To simulate the quantum noise, the random numbers obeying noise distribution must be formed and are weighted on the basis of the model created. Three uniform random sequences are built by the linear congruential method, of which two are used to form integer number and decimal fraction parts of the new random sequence respectively and the third to shuffle the new sequence. And then a Gauss sequence is formed out of uniform distribution by a function transforming method. It actualizes the simulation in real time of quantum noise in the low light imaging system, where video flow is extracted in real time, the noise summed up and played back side by side with the original video signs by a simulation software.
文摘A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.
基金The National Basic Research Program of China(973Program)(No.2013CB932902)the National Natural Science Foundation of China(No.21201034,21173042)the Fundamental Research Funds for the Central Universities(No.3207044403)
文摘To achieve a new type of carbon-based quantum dots with unique photoluminescence PL a simple approach for fabrication of graphene quantum dots GQDs with oxygen-rich groups was developed via the hydrothermal reaction by using graphene oxides GOs as a precursor. Transmission electron microscope TEM and atomic force microscope AFM characterizations confirmed that the sizes and heights of GQDs were 5.02±0.92 nm and 0.6 nm respectively.A strong PL emission exhibited unique excitation wavelength dependent features.Also the carbene-like free zigzag edge sites were proposed to be the origin of the strong PL emission.The GQDs were demonstrated to be a superior probe for Fe3＋ detection in aqueous solution with a high sensitivity and feasibility due to the special coordinate interaction between Fe3＋and the phenolic hydroxyl group at GQDs.
文摘The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.
文摘Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180″ and 185″ for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405 9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.
