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AlGaN/GaN高电子迁移率晶体管中二维电子气的极化光学声子散射 被引量:3
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作者 张雪冰 刘乃漳 姚若河 《物理学报》 SCIE EI CAS CSCD 北大核心 2020年第15期237-242,共6页
AlGaN/GaN界面处的二维电子气迁移率是描述高电子迁移率晶体管特性的一个重要参数,极化光学声子散射是高温时限制二维电子气迁移率的主要散射机制.本文对极化光学声子散射进行计算,结果表明在二维电子气浓度为6×10^11-1×10^13... AlGaN/GaN界面处的二维电子气迁移率是描述高电子迁移率晶体管特性的一个重要参数,极化光学声子散射是高温时限制二维电子气迁移率的主要散射机制.本文对极化光学声子散射进行计算,结果表明在二维电子气浓度为6×10^11-1×10^13 cm^–2,温度为200-400 K范围内,极化光学声子散射因素决定的迁移率随温度的变化近似为μPO=AT-α(α=3.5);由于GaN中光学声子能量较大,吸收声子对迁移率的影响远大于发射声子的影响.进一步讨论了极化光学声子散射因素决定的迁移率随光学声子能量变化的趋势,表明增加极化光学声子能量可提高二维电子气的室温迁移率. 展开更多
关键词 二维电 极化光学散射 高温迁移率 光学声子能量
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Effects of confined longitudinal and interface optical phonons on excitons in an asymmetric quantum well 被引量:2
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作者 DENG YanPing TIAN Qiang 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2011年第9期1593-1599,共7页
The interaction between exciton and confined longitudinal optical (LO) phonons, interface optical (IO) phonons in an asymmetric Ga1-xAlxAsIGaAslGao.TAlo.3As square quantum well is investigated. By applying the LLP... The interaction between exciton and confined longitudinal optical (LO) phonons, interface optical (IO) phonons in an asymmetric Ga1-xAlxAsIGaAslGao.TAlo.3As square quantum well is investigated. By applying the LLP-like transformation and variational approach, the numerical results are obtained as functions of the well width and asymmetric-degree of well. The exciton-optical phonons interaction-energy has a minimum value with the increase of the well width. It is demonstrated that the LO-phonon energy-contribution increases while the IO-phonon contribution decreases as the well width increases gradually. The energy-contribution of LO-phonon in symmetric and asymmetric square quantum well does not have too much difference, but the IO-phonon contribution varies apparently. The exciton binding-energy monotonically decreases with the increase of the well width and is proportional to the left-barrier height. 展开更多
关键词 asymmetric square quantum well EXCITON PHONONS
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