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正丁基苝四羧酸二酰亚胺的晶型和性能研究
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作者 张文官 赵生敏 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2006年第2期302-305,共4页
文章合成了N,N’-二正丁基菲四羧酸二酰亚胺,并纯化、调晶,进行了IR、元素分析、X射线等测定。分析该化合物在DMF中的紫外光谱(最大吸收波长524.80nm)、荧光光谱(最大发射波长539.0nm)、Stokes位移(数值15nm)等光谱性质。存4... 文章合成了N,N’-二正丁基菲四羧酸二酰亚胺,并纯化、调晶,进行了IR、元素分析、X射线等测定。分析该化合物在DMF中的紫外光谱(最大吸收波长524.80nm)、荧光光谱(最大发射波长539.0nm)、Stokes位移(数值15nm)等光谱性质。存400-700nm范围内,α晶型薄膜紫外-可见吸收出现很强的吸收峰,且由β型变为α型,最大吸收波长有明显的红移(545nm变为580nm)。X射线粉末衍射也反映出α晶型的2θ在26.0。处衍射峰CPS为2508,β型在25.2。为1891。α,β晶型作为电荷产生材料制得的功能分离型有机光导体,在光源滤波波长λ=532nm曝光下,测得含α,β感光体达到饱和电位的时间分别为46,93.98s。光衰电位(5.3千伏电压负充电电晕,1~2S后的表面电位)分别为727和525V,半衰曝光量分别为4.32,4.34μJ·cm^-2,残余电位分别为30和45V等光导性能数值。 展开更多
关键词 N N-二正丁基菲四羧酸二酰亚胺 品型 光导件能
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Nanowire-based transparent conductors for flexible electronics and optoelectronics 被引量:9
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作者 Jie Xue Jizhong Song +3 位作者 Yuhui Dong Leimeng Xu Jianhai Li Haibo Zeng 《Science Bulletin》 SCIE EI CAS CSCD 2017年第2期143-156,共14页
As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are in... As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are inquired materials. Metal nanowires(NWs) with the excellent photoelectric properties as next-generation TE candidates have widely applications in smart optoelectronic devices such as electronic skins, wearable electronics, robotic skins, flexible and stretchable displays. This review describes the synthetic strategies for the preparation of metal NWs, the assemble process for metal NW films,and the practical aspects of metal NW films with the desired properties in various low-cost, flexible,and solution-based photoelectric devices. 展开更多
关键词 Metal nanowires Transparent electrodes Solution-based process Light-emitting diodes Touch screens Solar cells
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