This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers.We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer...This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers.We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide.The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm.Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm.Therefore,our invariable coupling power technique is simpler than Intel's.展开更多
基金the National Natural Science Foundation of China (Grant No.60477020 and 60776046)the National Natural Science Key Foundation of China (Grant No.60537010)the National Basic Research Program of China (Grant No.2006CB302802)
文摘This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers.We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide.The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm.Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm.Therefore,our invariable coupling power technique is simpler than Intel's.
