一种新的空穴传输材料三苯胺双醛二苯腙的合成及其光导特性

本文合成了静电复印用电荷传输材料三苯胺双醛二苯腙，并用元素分析和氢谱对其进行了表征。用此化合物做空穴传输材料、Y－TiOPc做电荷产生材料制备了双层结构光导器件，其E1／2为0．81ux.s。

Relationship Between Ecophysiological Features and Grain Yield in Different Soybean Varieties

Photosynthetic rate ( P n ), transpiration rate ( E ), stomatal conductance ( g s ), water use efficiency ( WUE ), intercellular CO 2( C i ) and leaf water potential ( Ψ ) in varieties of soybean ( Glycine max (L.) Merr.) measured in the past three decades (1970s, 1980s and 1990s) and their inter_relationships were analyzed. These parameters of soybean changed with development stages. It is shown that there was a strongly positive relationship between the yield of soybean and its net photosynthetic rate. Soybean varieties with high yield potential had higher P n , g s and Ψ than those with low yield potential. Their values of C i were remarkably lower. Such relationship was especially remarkable at the critical stage of pod_bearing. P n of soybean of high yield was obviously higher than that of low yield. Of the different stages, the highest P n was found in the pod_bearing stage and other values were higher, too. P n and Ψ of modern soybean varieties were higher and such was continuing. Increased partitioning of carbon to seed and the size of sink may also be important for yield formation when P n values were remarkably higher in the pod_bearing stage.

Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on Spectroscopy Method

An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.

Temperature characteristics of InGaAs/GaAs vertical cavity surface emitting laser

The temperature characteristics for the different lasing modes at 300 K of intracavity contacted InGaAs/GaAs Vertical Cavity Surface Emitting Lasers（VCSELs） have been investigated experimentally by using the SV-32 cryostat and LD200205 test system. In combination with the simulation results of the reflective spectrum and the gain peak at different temperatures, the measurement results have been analyzed. In addition, the dependence of device size on temperature characteristics is discussed. The experimental data can be used to optimally design of VCSEL at high or cryogenic temperature.

Inner Am monium Salt Carbocyanine Filmson SiSurface and Their Photoelectric Properties

Two inner salt carbocyanines were filmed chemically on the Si surface through Si-O-C bond. The structures were characterized by SERS and XPS. And the spectral response and surface photovoltage spectrum were measured. These results show that the Si wafer can be sensitized by dyes, and the filmed Si wafers have photovoltage effect.

Effect of the Microstructure and the Dopant Valence Stateson EL of ZnS Thin Film Devices

A systematic study of the effect of microstructure on the EL properties of ZnS:Er thin film devices fabricated by thermal evaporatio n was carried out using XRD, XPS and EL techniques. The experimental results i ndicate that the high brightness of the devices is attributed to the deposition growth of cr ystallites oriented in the (311), (400) directions. This can be explained by ass uming a higher population of erbium being in the trivalent charge state in the ( 311), (400) planes of the films grown under certain deposition condition. It is concluded that only the part of rare earth dopant being in trivalent charge stat e in the film contributes to luminescence. The mechanism of the formation of lum inescence center and the excitation of Er 3+ ion by the electric field are discussed.

Modeling,fabrication and measurement of a novel CMOS UV/blue-extended photodiode

A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.

Effect of Mesa Size on Thermal Characteristics of Ver tical-cavity Surface-emitting Lasers

The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa V CSEL. Under a certain driving voltage, with decreasing mesa size, the location o f the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characterist ics of the etched mesa VCSELs will deteriorate.

Cavity-Mode Properties of Semiconductor Lasers Operating in Strong-Feedback Regime

This paper investigates the modal properties of semiconductor lasers operating in the strong-feedback regime. Analytical expressions are developed based on an iterative travelling-wave model, which enable a complete and quantitative description of a compound cavity mode in its steady state. Additional information is provided about the physical inside into a compound laser system, such as a bifurcation diagram of the compound cavity modes for full variation range （from 0 to 1） of the external reflection coefficient and a more general shape for the diagram of photon density versus mode phase - this latter will reduce to the classical ＂ellipse＂ in the weak-feedback regime. It is shown that in the strong-feedback regime, a feedback laser is characterized by a small mode number and a high density of photons. This behavior confirms previous experimental observations, showing that beyond the coherence-collapse regime, the compound laser system could be re-stabilized, and that as a result power-enhanced low-noise stable laser operation with quasi-uniform pulsation is possible with external-mirror reflectivity close to 1. Moreover, it is also shown that for a compound system operating in the strong-feedback regime, an anti-reflection treatment of a laser can significantly reduce its current threshold, and that in the absence of this treatment excitation of a minimum-linewidth mode with higher output power would be possible inside such a system. Finally, it is shown that in the weak-feedback regime except for a phase shift the iterative travelling-wave model will reduce to the Lang-Kobayashi model in cases where the product of the feedback rate and the internal round-trip time is much less than unity （that would mean in situations of as-cleaved lasers）.

New tetraphenylpyridinium-based luminogens with aggregation-induced emission characteristics

The research on aggregation-induced emission (AIE) has drawn increasing interests in the past decade. With the efforts scientists paid, a variety of AIE systems have been developed, among which the tetraphenylethelene and silole derivatives are the most studied. Development of new AIE systems could further enrich the AIE molecules and promote the development of AIE area. In this communication, we prepared a new AIE system based on 1,2,4,6-tetraphenylpyridinium ions according to the restriction of intramolecular rotation mechanism. These molecules could be facilely synthesized via one-step and one-pot reaction. The ionic AIE-active molecules could find wide application in sensing and optoelectronic areas.

Surface photovoltage phase spectroscopy study of the photo-induced charge carrier properties of TiO_(2) nanotube arrays

By using the surface photovoltage (SPV) technique based on a lock-in amplifier, surface states located 3.1 eV below the conduction band of TiO_(2) have been detected in TiO_(2) nanotube arrays prepared by anodization of titanium foil in fluoride-based ethylene glycol solution. The photo-induced charge transportation behavior of TiO_(2) nanotube arrays was also studied by quali- tatively analyzing their SPV phase spectra measured under different external bias. When a negative bias was applied, carriers excited from surface states have the same transportation properties as those excited from the valence band; in contrast, when a positive bias was applied, these two kinds of photo-excited carriers exhibit different transportation behavior..

Design of an Optical Water Pollution Sensor Using a Single-Layer Guided-Mode Resonance Filter

The optical characteristics of a simple, planar, single layer, dielectric Mg-based guided mode resonance filter （GMRF） were investigated by means of rigorous-coupled wave analysis （RCWA）. This filter has great potential for real-life applications, especially as bio- and environmental sensors. The structure of the proposed sensor is compact, and all of its layers can be grown in a single process. In this paper, we present results on the design of a water pollution sensor in the violet region of the visible spectrum. The spectral and angular sensitivities of the sensor for both the transverse electric （TE） and transverse magnetic （TM） polarization modes were estimated and compared for various regions in the violet spectrum. A spectral response characterized with a narrow bandwidth and low reflection side bands was realized by carrying out extensive parameter search and optimization. Optimal spectral and angular sensitivities were found for the sensor with a grating thickness of 100nm in the TM polarized mode where we found them to be 100nm and 40 degrees, per index refraction unit, respectively.

Light propagation characteristics through the annular coupled-cavity waveguides based on the two-dimensional square-lattice photonic crystal

The light propagation characteristics through the annular coupled-resonator cavity waveguides are systematically analyzed by the finite-difference time-domain (FDTD) method. It is found that this kind of waveguide has more minbands owing to the increasing of the cavity’s size, compared with the traditional line-typed coupled-resonator waveguide. The group velocity of light propagation can be reduced for a further degree when the adjacent annular cavities are interlaced in the perpendicular direction, and a group velocity about 0.00067c (c is the light speed in vacuum) can be obtained.

A chain-type diamine strategy towards strongly anisotropic triiodide of DMEDA·I6

Linearly bonded triiodide chains with fairly small distance between the adjacent iodine ions feature a facile electron transfer and highly anisotropic properties.Here,we demonstrate a novel strategy towards a new one-dimensional linear triiodide DMEDA·I6,using chain-type N,N'-dimethylethanediamine(DMEDA)cation to coordinate triiodine ions.This triiodide has the shortest distance between adjacent I3^- and good linearity.An estimated electronic band gap of1.36 e V indicates its semiconducting properties.100 fold differences both in polarization-sensitive absorption and effective mass were achieved by simulation,with directions parallel and perpendicular to the a-axis of DMEDA·I6.The DMEDA·I6 single crystal-based photodetectors show a good switching characteristic and a distinct polarization-sensitive photoresponse with linear dichroic photodetection ratio of about 1.9.Strongly anisotropic features and semiconducting properties of DMEDA·I6 make this triiodide system an interesting candidate for polarization related applications.

Fabricating scheme and optical properties of a flexible semiconductor micro-laser

A new scheme for fabricating a kind of flexible semiconductor micro-laser is put forward.And the optical properties of this kind of flexible semiconductor laser are investigated by the finite difference time domain(FDTD) method.The results show that the light should be localized by photonic crystals(PCs),and the interaction between light and gain medium should be enhanced,while the mode of laser should be modulated.These results indicate that the PCs could control the spontaneous emission,and lead the radiation emission to the needed frequency.