A new method based on UV photosensitivity is proposed to fabricate big scale two dimensional photonic crystal.The optical transmission properties of designed periodic structure are investigated by numerical analysis.T...A new method based on UV photosensitivity is proposed to fabricate big scale two dimensional photonic crystal.The optical transmission properties of designed periodic structure are investigated by numerical analysis.The results show that the 2D photonic crystal fabricated by the new method has a desirable photonic bandgap of TE mode.展开更多
A new type of highly nonlinear photonic bandgap fiber with modified honeycomb lattice is brought forward. Based on full-vector plane-wave method, the structure of bandgaps and the distributions of fundamental mode fie...A new type of highly nonlinear photonic bandgap fiber with modified honeycomb lattice is brought forward. Based on full-vector plane-wave method, the structure of bandgaps and the distributions of fundamental mode field are analyzed. Then its nonlinear coefficient is calculated, and the effect of each structural pa- rameter on the nonlinear coefficient is discussed. At last, considering many factors synthetically, we make some optimization design of the structural parameters. It can be concluded that this new type of photonic bandgap fiber can gain the nonlinear coefficient of 30 W^-1 km^-1.展开更多
Based on the rapid genetic algorithm(RGA),the band gap structures of square lattices with square scatters are optimized.In the optimizing process,gene codes are used to express square scatters and the fitting function...Based on the rapid genetic algorithm(RGA),the band gap structures of square lattices with square scatters are optimized.In the optimizing process,gene codes are used to express square scatters and the fitting function adopts the relative values of the largest absolute photonic band gaps(PBGs).By changing the value of filling factor,three cell forms with large photonic band gaps are obtained.In addition,the comparison between the rapid genetic algorithm and the general genetic algorithm(GGA) is analyzed.展开更多
Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication waveleng...Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge_(25)Ga)5Sb_(10)S_(65)(doped with Er^(3+)) spacer layer surrounded by two 5-layer As_(40)Se_(60)/Ge_(25)Sb_(5)S_(70) reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.展开更多
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respec...Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.展开更多
文摘A new method based on UV photosensitivity is proposed to fabricate big scale two dimensional photonic crystal.The optical transmission properties of designed periodic structure are investigated by numerical analysis.The results show that the 2D photonic crystal fabricated by the new method has a desirable photonic bandgap of TE mode.
基金Supported by the National 863 Project of China (2004AA31G200) .
文摘A new type of highly nonlinear photonic bandgap fiber with modified honeycomb lattice is brought forward. Based on full-vector plane-wave method, the structure of bandgaps and the distributions of fundamental mode field are analyzed. Then its nonlinear coefficient is calculated, and the effect of each structural pa- rameter on the nonlinear coefficient is discussed. At last, considering many factors synthetically, we make some optimization design of the structural parameters. It can be concluded that this new type of photonic bandgap fiber can gain the nonlinear coefficient of 30 W^-1 km^-1.
基金supported by the Natural Science Collaborating Foundation of Jiaying College and Meizhou Science and Techonolgy Bureau(No. 2009KJ08)
文摘Based on the rapid genetic algorithm(RGA),the band gap structures of square lattices with square scatters are optimized.In the optimizing process,gene codes are used to express square scatters and the fitting function adopts the relative values of the largest absolute photonic band gaps(PBGs).By changing the value of filling factor,three cell forms with large photonic band gaps are obtained.In addition,the comparison between the rapid genetic algorithm and the general genetic algorithm(GGA) is analyzed.
基金supported by the National Natural Science Foundation of China(No.61308092)the Natural Science Foundation of Liaoning Province of China(No.2013010590-401/20131116)
文摘Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge_(25)Ga)5Sb_(10)S_(65)(doped with Er^(3+)) spacer layer surrounded by two 5-layer As_(40)Se_(60)/Ge_(25)Sb_(5)S_(70) reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.
基金supported by the National Natural Science Foundation of China(Nos.6127411311204212 and 61404091)+5 种基金the Program for New Century Excellent Talents in University(No.NCET-11-1064)the Tianjin Natural Science Foundation(Nos.13JCYBJC1570013JCZDJC2610014JCZDJC31500 and 14JCQNJC00800)the Tianjin Science and Technology Developmental Funds of Universities and Colleges(Nos.2010070320130701 and 20130702)
文摘Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.
