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AgO_x薄膜的光开关特性和机理研究 被引量:8
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作者 熊曹水 熊永红 +2 位作者 赵天鹏 罗震林 明海 《中国激光》 EI CAS CSCD 北大核心 2002年第5期436-438,共3页
用磁控溅射法制备了具有超分辨近场结构的系列薄膜 ,测量了非线性层AgOx 的光开关特性及其结构随温度的变化 ,分析了AgOx
关键词 光开关特性 磁控溅射 AgOx薄膜
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全息术与器件
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《中国光学》 EI CAS 2003年第6期31-33,共3页
O438.1 2003064195新型聚合物分散液晶材料研制的电控体全息光栅=Novelelectrically switchable holographic polymer dispersed liquidcrystal Bragg grating[刊,中]/郑继红(上海理工大学光学与电子信息工程学院.上海(200093)),陈刚…... O438.1 2003064195新型聚合物分散液晶材料研制的电控体全息光栅=Novelelectrically switchable holographic polymer dispersed liquidcrystal Bragg grating[刊,中]/郑继红(上海理工大学光学与电子信息工程学院.上海(200093)),陈刚…∥光学学报.-2003,23(4).-491-495报道了聚合物分散液晶材料全息光栅元件的研制,研究了聚合物分散液晶材料光栅的衍射特性及电控开关特性。该光栅结合了聚合物分散液晶材料的电控光开关特性和全息光栅的优点,在光通信器件、可调窗口、液晶显示等领域具有广泛的应用前景和巨大的潜在生产力。 展开更多
关键词 聚合物分散液晶 体全息 应用前景 干涉条纹 快速傅里叶变换 光开关特性 时钟分布 偏振全息术 液晶显示 电子
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薄膜材料与器件
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《中国光学》 EI CAS 2003年第1期74-75,共2页
O484.1 2003010574一种有效的色散补偿镜优化设计方法=Efficient optimizationmethod for dispersion compensation mirror design[刊, 英]/陈晓和(天津大学精密仪器与光电子工程学院.天津(300072)),杨天新…//光子学报.-2002,31(7).-86... O484.1 2003010574一种有效的色散补偿镜优化设计方法=Efficient optimizationmethod for dispersion compensation mirror design[刊, 英]/陈晓和(天津大学精密仪器与光电子工程学院.天津(300072)),杨天新…//光子学报.-2002,31(7).-860-864介绍了一种有效的色散补偿优化设计方法。这种方法将广义模拟退火法和最小二乘法结合起来使用。在色散补偿镜的设计过程中,用双啁啾结构作为初始膜系。 展开更多
关键词 优化设计方法 广义模拟退火法 补偿镜 最小二乘法 色散补偿 精密仪器 细菌视紫红质 天津大学 光开关特性 设计过程
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Reversible optical control of the metal-insulator transition across the epitaxial heterointerface of a VO_(2)/Nb:TiO_(2) junction
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作者 Yuanjun Yang Guilin Wang +18 位作者 Wenyu Huang Cangmin Wang Yingxue Yao Xiaoli Mao Hui Lin Ting Zhang Huaili Qiu Zhongjun Li Hui Zhang Yuewei Yin Jinhua Guo Yong Guan Wensheng Yan Zhenlin Luo Chongwen Zou Yangchao Tian Gang Xiao Xiaoguang Li Chen Gao 《Science China Materials》 SCIE EI CAS CSCD 2021年第7期1687-1702,共16页
Optical control of exotic properties in strongly correlated electron materials is very attractive owing to their potential applications in optical and electronic devices.Herein,we demonstrate a vertical heterojunction... Optical control of exotic properties in strongly correlated electron materials is very attractive owing to their potential applications in optical and electronic devices.Herein,we demonstrate a vertical heterojunction made of a correlated electron oxide thin film VO_(2) and a conductive 0.05 wt% Nb-doped TiO_(2) single crystal,whose metal-insulator transition(MIT)across the nanoscale heterointerface can be efficiently modulated by visible light irradiation.The magnitude of the MIT decreases from ~350 in the dark state to ~7 in the illuminated state,obeying a power law with respect to the light power density.The junction resistance is switched in a reversible and synchronous manner by turning light on and off.The optical tunability of it is also exponentially proportional to the light power density,and a 320-fold on/off ratio is achieved with an irradiance of 65.6 mW cm^(-2) below the MIT temperature.While the VO_(2) thin film is metallic above the MIT temperature,the optical tunability is remarkably weakened,with a one-fold change remaining under light illumination.These results are co-attributed to a net reduction(~15 meV)in the apparent barrier height and the photocarrier-injection-induced metallization of the VO_(2) heterointerface through a photovoltaic effect,which is induced by deep defect level transition upon the visible light irradiance at low temperature.Additionally,the optical tunability is minimal,resulting from the quite weak modulation of the already metallic band structure in the Schottky-type junction above the MIT temperature.This work enables a remotely optical scheme to manipulate the MIT,implying potential uncooled photodetection and photoswitch applications. 展开更多
关键词 metal-insulator transition VO2 thin film optical control strongly correlated electron material PHOTOSWITCH
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