窄带隙共轭聚合物/富勒烯衍生物光探测器件的研究

基于高灵敏度、宽光谱响应的窄带隙共轭聚合物光探测器件的研究取得了突破性进展,受到了学术界和产业界的高度重视,成为了当前光探测器件研究的热点课题之一。本文概述了窄带隙共轭聚合物作为电子给体与电子受体PC61BM下光伏器件的研究进展及存在的问题。提出了带隙更窄、光谱响应更宽的共轭聚合物的合成与器件的优化研究将具有更大的发展前景。

Monolithically Fabricated OEICs Using RTD and MSM

Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.

Teleportation of a Bipartite Entangled Coherent State via a Four-Partite Cluster-Type Entangled State

We present an optical scheme to almost completely teleport a bipartite entangled coherent state using afour-partite cluster-type entangled coherent state as quantum channel.The scheme is based on optical elements suchas beam splitters,phase shifters,and photon detectors.We also obtain the average fidelity of the teleportation process.It is shown that the average fidelity is quite close to unity if the mean photon number of the coherent state is not toosmall.

Organic-inorganic hybrid Sn-based perovskite photodetectors with high external quantum efficiencies and wide spectral responses from 300 to 1000 nm

Organic-inorganic hybrid perovskites are ideal materials for photodetection owing to their high charge carrier mobility, long charge carrier diffusion length, low dark current density and sharp absorption edge. However, a relatively small band gap(1.6 e V) limits their photonharvesting efficiency in the near-infrared region. In the present work, we demonstrate a hybrid methylamine iodide and Pb-Sn binary perovskite as the light absorption layer in photodetectors. Experimentally, the wavelength of photoresponse onset for the photodetectors can be extended to as great as 1,000 nm when the Sn content of the hybrid perovskite is increased to 30 mol%. In addition, the photodetectors exhibit a photoresponsivity of 0.39 A W^-1, a specific detectivity of 7×10^12 Jones, a fast photoresponse with rise and decay time constants and an external quantum efficiency greater than 50% in the wavelength range of350–900 nm, with a maximum value of about 80% at 550 nm.

Absorption of light in InP nanowire arrays

An understanding of the absorption of light is essential for efficient photovoltaic and photodetection applications with III-V nanowire arrays. Here, we correlate experiments with modeling and verify experimentally the predicted absorption of light in InP nanowire arrays for varying nanowire diameter and length. We find that 2,000 nm long nanowires in a pitch of 400 nm can absorb 94% of the incident light with energy above the band gap and, as a consequence, light which in a simple ray-optics description would be travelling between the nanowires can be efficiently absorbed by the nanowires. Our measurements demonstrate that the absorption for long nanowires is limited by insertion reflection losses when light is coupled from the air top-region into the array. These reflection losses can be reduced by introducing a smaller diameter to the nanowire-part closest to the air top-region. For nanowire arrays with such a nanowire morphology modulation, we find that the absorptance increases monotonously with increasing diameter of the rest of the nanowire.

Self-catalyzed growth of GaSb nanowires for high performance ultraviolet-visible-near infrared photodetectors

A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline GaSb nanowires,where Ga droplets were utilized as the catalysts.The as-grown GaSb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm^2 V^-1 s^-1.The photoresponse properties of the GaSb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible substrates.The results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet,visible,to near-infrared region.For the device on rigid substrate,the corresponding responsivity and the detectivity were calculated to be 3.86×10^3 A W-1 and 3.15×10^13 Jones for 500 nm light,and 7.22×10^2 A W-1 and 5.90×10^12 Jones for 808 nm light,respectively,which were the highest value compared with those of other reported Ga1-xInxAsySb1-y structure nanowires.Besides,the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one,but also possessed excellent mechanical flexibility and stability.This study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown GaSb nanowires and the design of functional nano-optoelectronic devices based on GaSb nanowires.

A low-dimension structure strategy for flexible photodetectors based on perovskite nanosheets/ZnO nanowires with broadband photoresponse

Flexible photodetectors(PDs) have huge potential for application in next-generation optoelectronic devices due to their lightweight design, portability, and excellent large area compatibility. The main challenge in the construction of flexible PDs is to maintain the optoelectronic performance during repetitive bending, folding and stretching.Herein, flexible PDs based on ZnO nanowires(NWs) and CsPbBr3 nanosheets(NSs) were constructed by an integrated low-dimensional structure strategy. Benefiting from the flexibility of unique sheet and wire structures, the PDs were able to maintain excellent operational stability under various mechanical stresses. For example, the PDs exhibited no obvious changes in optoelectronic performance after bending for 1000 times. Additionally, the PDs exhibited an integrated broadband response ranging from ultraviolet to visible region due to the combination of the intrinsic light absorption capability of ZnO and CsPbBr3. The PDs demonstrated high responsivities of 3.10 and 0.97 A W^-1 and detectivities of 5.57×10^12 and1.71×10^12 Jones under ultraviolet and visible light irradiation,respectively. The proposed construction strategy for highly flexible and performance-integrated PDs shows great potential in future smart, wearable optoelectronic devices.

Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector

The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intriguing optical and electronic properties,making it an attractive photosensitive material for optoelectronic applications.However,the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS_(2)impedes its application in high-performance photodetectors.Herein,we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS_(2).In this device,1D Te induces in-plane strain in 2D WS_(2),which regulates the electronic structures of local WS_(2)and gives rise to type-Ⅱ band alignment in the horizontal direction.Moreover,the vertical heterojunction built of 2D WS_(2)and 1D Te introduces a high photoconductive gain.Benefiting from these two effects,the transfer of photogenerated carriers is optimized,and the proposed photodetector exhibits high sensitivity(photoresponsivity of ~27.7 A W^(-1),detectivity of 9.5×10^(12)Jones,and short rise/decay time of 19.3/17.6 ms).In addition,anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved.This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties,opening up a new avenue towards constructing multifunctional optoelectronic devices.

Robust Generation of Three-Particle W State with Atoms Trapped in Separate Cavities

This paper presents a scheme for generating three-particle W state of remote atoms trapped in leaky cavities.The scheme uses cavity decay to inject photons into a setup of optical devices which consist of a series of beam splitters and photon detectors.Photon detection on the output mode projects the atomic state into the W state.In the condition of "weakly driven approach",it shows that the scheme is robust and has high fidelity.It also points out that the scheme is scalable to generate multi-atomic W state.

Space-confined growth of high-quality CsBi3I10 lead-free perovskite film for near-infrared photodetectors with high sensitivity and stability

As a lead-free perovskite,CsBi3I10 has attracted significant attention because of its high thermal tolerance and long electron diffusion length.Solution-processed high-performance CsBi3I10 perovskite devices,however,are hindered by the formation of a two-dimensional structure,which results in an extremely high surface roughness and many pinholes.In this paper,we reported a space-confined growth(SCG)method using a single-layer polystyrene(PS)sphere template to obtain high-smoothness,high-crystallinity,and dense CsBi3I10 perovskite films.Compared with traditionally spin-coated CsBi3I10 photodetectors(PDs),the metal-semiconductor-metal PDs made by SCG showed a higher photocurrent,a lower dark current,and a bigger on/off ratio.In addition,the photocurrent of our unencapsulated CsBi3I10 perovskite PDs was not attenuated under long-time illumination.In addition,when the device was stored in air for 30 d,its performance also showed no degradation,demonstrating ultra-high stability.Furthermore,the synthesis was free of antisolvents,such as chlorobenzene and toluene,which is beneficial for the environmentally friendly assembly of the devices.Our strategy opens up a new way to prepare high-quality lead-free perovskite,which may be useful for applications in light-emitting diodes and solar cells.