In this work,GaN-based light-emitting diodes(LEDs) with a p-GaN/i-InGaN short-period superlattice(SPSL) structure,p-GaN and undoped GaN last quantum barrier(LQB) have been numerically investigated by using the APSYS s...In this work,GaN-based light-emitting diodes(LEDs) with a p-GaN/i-InGaN short-period superlattice(SPSL) structure,p-GaN and undoped GaN last quantum barrier(LQB) have been numerically investigated by using the APSYS simulation software.It has been found that the efficiency droop is significantly improved when the undoped GaN LQB in a typical blue LED is replaced by a p-GaN/i-InGaN SPSL structure.According to the simulation analysis,using the p-GaN/i-InGaN SPSL structure as LQB is beneficial to increasing the hole injection efficiency and decreasing the electron current leakage.Therefore,the radiative recombination and optical power are enhanced.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 61176043)the Doctoral Fund of Ministry of Educationof China (Grant No. 20060574007)+3 种基金the Production and Research Projectof Guangdong Province and Ministry of Education (Grant Nos.2009B090300338,2010B090400192)the LED Industry Project of Special Funds of Strategic Emerging Industries of Guangdong Province in 2011(Grant No. 2010A081002005)the LED Industry Project of Special Fundsof Strategic Emerging Industries of Guangdong Province in 2012 (GrantNo. 2011A081301003)the Science and Technology Program of Guangzhou Huadu District (Grant Nos. HD10CXY-G002,HD10CXY-G013)
文摘In this work,GaN-based light-emitting diodes(LEDs) with a p-GaN/i-InGaN short-period superlattice(SPSL) structure,p-GaN and undoped GaN last quantum barrier(LQB) have been numerically investigated by using the APSYS simulation software.It has been found that the efficiency droop is significantly improved when the undoped GaN LQB in a typical blue LED is replaced by a p-GaN/i-InGaN SPSL structure.According to the simulation analysis,using the p-GaN/i-InGaN SPSL structure as LQB is beneficial to increasing the hole injection efficiency and decreasing the electron current leakage.Therefore,the radiative recombination and optical power are enhanced.
