TN142.4 96021283 全静电摄像管的制造工艺研究=Technologicalstudy of all—electrostatic camera tube[刊,中]/董亚强,吕忠诚,常本康(南京理工大学电子工程与光电技术学院。江苏,南京(210094))∥南京理工大学学报。—1995,19(5)。—45...TN142.4 96021283 全静电摄像管的制造工艺研究=Technologicalstudy of all—electrostatic camera tube[刊,中]/董亚强,吕忠诚,常本康(南京理工大学电子工程与光电技术学院。江苏,南京(210094))∥南京理工大学学报。—1995,19(5)。—453—456 根据采用图案型聚焦偏转电极的全静电摄像管的结构特点,分析研究了影响整管性能的关键工艺。设计并制作出了两种不同结构的性能良好的18mm全静电摄像管。图4参6(邹振书)展开更多
A different approach,using the molecular beam epitaxy (MBE)-grown ZnS-based Schottky photodiode technology,is applied to fabricate an 8×8 photodiode array.The micro-processing procedures of this photodiode array ...A different approach,using the molecular beam epitaxy (MBE)-grown ZnS-based Schottky photodiode technology,is applied to fabricate an 8×8 photodiode array.The micro-processing procedures of this photodiode array including standard photolithography,a number of metallisation,wet-chemical etching and SiO_2 deposition for insulation are developed.The detector is characterized to have a cutoff wavelength at 340 nm and the photo-responsivity measurements on the pixels result an ultraviolet (UV) response as high as 0.15 A/W,corresponding to an external quantum efficiency of 55% in the visible-blind spectral ranging from 400 down to 250nm.Imaging tests indicate that this array is able to capture the intensity profile of a given UV light source with reasonably good capability.展开更多
文摘TN142.4 96021283 全静电摄像管的制造工艺研究=Technologicalstudy of all—electrostatic camera tube[刊,中]/董亚强,吕忠诚,常本康(南京理工大学电子工程与光电技术学院。江苏,南京(210094))∥南京理工大学学报。—1995,19(5)。—453—456 根据采用图案型聚焦偏转电极的全静电摄像管的结构特点,分析研究了影响整管性能的关键工艺。设计并制作出了两种不同结构的性能良好的18mm全静电摄像管。图4参6(邹振书)
文摘A different approach,using the molecular beam epitaxy (MBE)-grown ZnS-based Schottky photodiode technology,is applied to fabricate an 8×8 photodiode array.The micro-processing procedures of this photodiode array including standard photolithography,a number of metallisation,wet-chemical etching and SiO_2 deposition for insulation are developed.The detector is characterized to have a cutoff wavelength at 340 nm and the photo-responsivity measurements on the pixels result an ultraviolet (UV) response as high as 0.15 A/W,corresponding to an external quantum efficiency of 55% in the visible-blind spectral ranging from 400 down to 250nm.Imaging tests indicate that this array is able to capture the intensity profile of a given UV light source with reasonably good capability.
