Carbonaceous catalysts are potential alternatives to metal catalysts. Graphene has been paid much attention for its high surface area and light weight. Here, hydrogenated graphene has been prepared by a simple gamma r...Carbonaceous catalysts are potential alternatives to metal catalysts. Graphene has been paid much attention for its high surface area and light weight. Here, hydrogenated graphene has been prepared by a simple gamma ray irradiation of graphene oxide aqueous suspension at room temperature. Transmission electron microscopic, element analysis, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometer studies verified the hydrogenation of graphene. The as-prepared hydrogenated graphene can be used as a metal-free carbonaceous catalyst for the Fenton-like degradation of organic dye in water.展开更多
Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The m...Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.展开更多
文摘Carbonaceous catalysts are potential alternatives to metal catalysts. Graphene has been paid much attention for its high surface area and light weight. Here, hydrogenated graphene has been prepared by a simple gamma ray irradiation of graphene oxide aqueous suspension at room temperature. Transmission electron microscopic, element analysis, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometer studies verified the hydrogenation of graphene. The as-prepared hydrogenated graphene can be used as a metal-free carbonaceous catalyst for the Fenton-like degradation of organic dye in water.
基金supported by the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University (Grant No.13M1060102)the Fundamental Research Funds for the Central Universities,China,Donghua University (Grant No. 13D110913)+5 种基金National Natural Science Foundation of China (Grant Nos. 51072034,11174048,51172042)the Cultivation Fund of the Key Scientific and Technical Innovation Project of China (Grant No. 708039)Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 201100751300-01)Science and Technology Commission of Shanghai Municipality (Grant No. 12nm0503900)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learningthe Program of Introducing Talents of Discipline to Universities of China(Grant No. 111-2-04)
文摘Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.
