穿通增强型硅光电晶体管的结构及参数优化

为克服各种常用光电探测器件的缺点,对穿通增强型硅光电晶体管进行了结构优化和参数优化。将窄基区穿通晶体管仅在一侧与宽基区光电晶体管复合的传统结构,改进为窄基区穿通晶体管在中间,两侧各复合一个长度减半的宽基区光电晶体管。同时,对不同窄基区宽度下的暗电流、光生电流及光电响应率等随偏压变化的电学性能和光电转换特性进行仿真,得到窄基区宽度最优参数。然后对优化后的器件在不同光强下的光生电流和光电响应率随偏压的变化进行了仿真,分析了器件在不同光强下的响应特性。结果表明,当窄基区宽度为0.6μm时,器件性能折中达到最优,在0.5 V偏压下,器件暗电流仅为1μA;入射光功率密度为10-7W/cm2时,器件响应率高达4×106A/W。

Stretchable SnO2-CdS interlaced-nanowire film ultraviolet photodetectors

Stretchable ultraviolet photodetectors with fast response have wide applications in wearable electronics and implantable biomedical devices. However, most of the conventional binary oxide nanowires based photodetectors exhibit slow response due to the presence of a large number of surface defects related to trapping centers. Herein, with interlaced SnO2-CdS nanowire films as the sensing materials, we fabricated stretchable ultraviolet photodetectors with significantly improved response speed via a multiple lithographic filtration method. Systematic investigations reveal that the interlaced-nanowire based photodetectors have lower dark current and much higher response speed(more than 100 times) compared with pure SnO2 nanowire based photodetectors. The relevant carrier generation and transport mechanism were also discussed. In addition, due to the formation of waved wrinkles on the surface of the nanowires/PDMS layer during the prestretching cycles, the SnO2-CdS interlaced nanowire photodetectors display excellent electrical stability and stretching cyclability within 50% strain, without obvious performance degradation even after 150 stretching cycles. As a simple and effective strategy to fabricate stretchable ultraviolet photodetectors with high response speed, the interlacednanowire structure can also be applied to other nanowire pairs, like ZnO-CdS interlaced-nanowires. Our method provides a versatile way to fabricate fast speed ultraviolet photodetectors by using interlaced metal oxide nanowires-CdS nanowires structures, which is potential in future stretchable and wearable optoelectronic devices.

A low-dimension structure strategy for flexible photodetectors based on perovskite nanosheets/ZnO nanowires with broadband photoresponse

Flexible photodetectors(PDs) have huge potential for application in next-generation optoelectronic devices due to their lightweight design, portability, and excellent large area compatibility. The main challenge in the construction of flexible PDs is to maintain the optoelectronic performance during repetitive bending, folding and stretching.Herein, flexible PDs based on ZnO nanowires(NWs) and CsPbBr3 nanosheets(NSs) were constructed by an integrated low-dimensional structure strategy. Benefiting from the flexibility of unique sheet and wire structures, the PDs were able to maintain excellent operational stability under various mechanical stresses. For example, the PDs exhibited no obvious changes in optoelectronic performance after bending for 1000 times. Additionally, the PDs exhibited an integrated broadband response ranging from ultraviolet to visible region due to the combination of the intrinsic light absorption capability of ZnO and CsPbBr3. The PDs demonstrated high responsivities of 3.10 and 0.97 A W^-1 and detectivities of 5.57×10^12 and1.71×10^12 Jones under ultraviolet and visible light irradiation,respectively. The proposed construction strategy for highly flexible and performance-integrated PDs shows great potential in future smart, wearable optoelectronic devices.

High-sensitivity shortwave infrared photodetectors of metal-organic frameworks integrated on 2D layered materials

Photodetectors operating in the shortwave infrared region are of great significance due to their extensive applications in both commercial and military fields.Narrowbandgap two-dimensional layered materials(2DLMs)are considered as the promising candidates for constructing nextgeneration high-performance infrared photodetectors.Nevertheless,the performance of 2DLMs-based photodetectors can hardly satisfy the requirements of practical applications due to their weak optical absorption.In the present study,a strategy was proposed to design high-performance shortwave infrared photodetectors by integrating metalorganic frameworks(MOFs)nanoparticles with excellent optical absorption characteristics and 2DLM with high mobility.Further,this study demonstrated the practicability of this strategy in a MOF/2DLM(Ni-CAT-1/Bi_(2)Se_(3))hybrid heterojunction photodetector.Due to the transfer of photo-generated carriers from the MOF to Bi_(2)Se_(3),the MOF nanoparticles integrated on the Bi_(2)Se_(3) layer can increase the photocurrent by 2-3 orders of magnitude.The resulting photodetector presented a high responsivity of 4725 A W^(−1) and a superior detectivity of 3.5×10^(13) Jones at 1500 nm.The outstanding performance of the hybrid heterojunction arises from the synergistic function of the enhanced optical absorption and photogating effect.In addition,the proposed device construction strategy combining MOF photosensitive materials with 2DLMs shows a high potential for the future high-performance shortwave infrared photodetectors.

Photogated proton conductivity of ZIF-8 membranes co-modified with graphene quantum dots and polystyrene sulfonate

Smart proton conductive metal-organic framework(MOF) membranes with dynamic remote control over proton conduction show high potential for use in advanced applications, such as sensors and bioprocesses. Here, we report a photoswitchable proton conductive ZIF-8 membrane by coencapsulating polystyrene sulfonate and graphene quantum dots into a ZIF-8 matrix(GQDs-PSS@ZIF-8) via a solidconfined conversion process. The proton conductivity of the GQDs-PSS@ZIF-8 membrane is 6.3 times higher than that of pristine ZIF-8 and can be reversibly switched by light due to photoluminescence quenching and the photothermal conversion effect, which converts light into heat. The local increase in temperature allows water molecules to escape from the porous channels, which cuts off the proton transport pathways and results in a decrease in proton conductivity. The proton conductivity is restored when the light is off owing to regaining water molecules, which act as proton carriers, from the surroundings. The GQDs-PSS@ZIF-8 membrane responds efficiently to light and exhibits an ON/OFF ratio of 12.8. This photogated proton conduction in MOFs has potential for the development and application of MOF-based protonic solids in advanced photoelectric devices.

Rational alloying of secondary and aromatic ammonium cations in a metal-halide perovskite toward crystal-array photodetection

Two-dimensional(2D)hybrid perovskites with the Ruddlesden-Popper lattice(A')_(2)(A)_(n-1)M_(n)X_(3n+1)are emerging as the promising optoelectronic candidates,both the inorganic and organic ingredients of which can be tailored to modulate the physical properties.Nevertheless,there is a scarcity of 2D multilayered motifs with the A-site large-size cations occupying perovskite cavities.Here,by rational mixedcation alloying,we present a new 2D hybrid perovskite,(4-TFBMA)_(2)(DMA)Pb_(2)I_(7)(1),in which the secondary cation of CH_(3)NH_(2)CH_(3)^(+)(DMA)is located inside the perovskite cage while the aromatic 4-(trifluoromethyl)benzylammonium(4-TFBMA)cation acts as a spacer moiety.Benefiting from the quantum structure of alternating organic spacers and inorganic networks,crystal-array detectors of 1 show fascinating in-plane photodetection responses of large detectivity(~2.95×10^(12)Jones)and responsivity(~1.97AW^(-1)),comparable to those of some inorganic 2D counterparts.In addition,a fast response rate(~264μs)and a low dark current are also realized,related to the high crystalline quality and suppression of the hopping barrier due to the insulating organic spacing layers.This result sheds light on the further exploration of new 2D hybrid perovskites toward high-performance photodetector applications.