We have investigated the distribution of the electric field in p-i-n GaN avalanche photodiodes under different reverse bias values. type and separate absorption and multiplication （SAM） type We have also analyzed th...We have investigated the distribution of the electric field in p-i-n GaN avalanche photodiodes under different reverse bias values. type and separate absorption and multiplication （SAM） type We have also analyzed the influences of the parameters of each layer, including width and concentration, on the distribution of the electric field, especially on the breakdown voltage. It is found that a relatively high concentration of p-GaN （higher than 1×10^18 cm-3） and low cartier concentration of i-GaN （lower than 5×1016 cm-3） are helpful to restrict the electric field and reduce the breakdown voltage. In a SAM （p-i-n-i-n） structure, a suitable choice should be made for the concentration and thickness of the intermediate n-GaN layer in order to decrease breakdown voltage and prevent the device from degenerating into a p-i-n structure. Finally, the optimized material parameters of each layer are proposed.展开更多
To enhance electric fields around nanorods,a Ag nanorod-groove system is presented and its electric field distribution is studied using the finite difference time domain method.Since the superposition of the electric ...To enhance electric fields around nanorods,a Ag nanorod-groove system is presented and its electric field distribution is studied using the finite difference time domain method.Since the superposition of the electric fields of the split multi-beam of light works as excitation for electron oscillations in the nanorods,enhanced electric fields occur around the nanorods.In addition,the effects of topological parameters of the nanorod-groove system,such as the oblique angle of the groove,displacement of the nanorod to the bottom of the groove,and separation between the nanorods on electric field distributions are also studied.These results may be helpful for designing substrates to obtain larger electric fields around nanorods.展开更多
基金supported by the National Science Fund for Distinguished Young Scholars (Grant No. 60925017)the National Natural Science Foundation of China (Grant Nos. 10990100,60836003 and 60776047)
文摘We have investigated the distribution of the electric field in p-i-n GaN avalanche photodiodes under different reverse bias values. type and separate absorption and multiplication （SAM） type We have also analyzed the influences of the parameters of each layer, including width and concentration, on the distribution of the electric field, especially on the breakdown voltage. It is found that a relatively high concentration of p-GaN （higher than 1×10^18 cm-3） and low cartier concentration of i-GaN （lower than 5×1016 cm-3） are helpful to restrict the electric field and reduce the breakdown voltage. In a SAM （p-i-n-i-n） structure, a suitable choice should be made for the concentration and thickness of the intermediate n-GaN layer in order to decrease breakdown voltage and prevent the device from degenerating into a p-i-n structure. Finally, the optimized material parameters of each layer are proposed.
基金supported by the National Natural Science Foundation of China (Grant No. 11004160)
文摘To enhance electric fields around nanorods,a Ag nanorod-groove system is presented and its electric field distribution is studied using the finite difference time domain method.Since the superposition of the electric fields of the split multi-beam of light works as excitation for electron oscillations in the nanorods,enhanced electric fields occur around the nanorods.In addition,the effects of topological parameters of the nanorod-groove system,such as the oblique angle of the groove,displacement of the nanorod to the bottom of the groove,and separation between the nanorods on electric field distributions are also studied.These results may be helpful for designing substrates to obtain larger electric fields around nanorods.
