Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch(PCSS) with an electrode distance of 4 mm. And made is ...Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch(PCSS) with an electrode distance of 4 mm. And made is an analysis of the switchs photovoltaic response characteristics under the high gain mode when the biased field is bigger than the Geng effect field. Also a theory is presented that the main reason for the photovoltaic pulse response delay is the transmission of charge domain, caused by the presence of EL2 energy level in the chip material. Finally, the transmission time of charge domain is calculated and a result that inosculates with the experiment is attained.展开更多
Y90-62009-267 0003646电信与信号处理用的4×4宽带光电子开关=4×4broadband optoelectronic switch for telecommunicationsand signal processing[会,英]/Hnatiw,A.J.P.&Boerjes,D.W.//Proceedings of the 1998 South Af...Y90-62009-267 0003646电信与信号处理用的4×4宽带光电子开关=4×4broadband optoelectronic switch for telecommunicationsand signal processing[会,英]/Hnatiw,A.J.P.&Boerjes,D.W.//Proceedings of the 1998 South AfricanSymposium on Communications and Signal Processing(COMSIG’98).—267～270(PC)描述4GHz 宽带4×4光电子开关的结构、性能和应用。开关系采用混合集成技术构成,可配置为电入/电出或光入/光出。展开更多
Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the sto...Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the stoichiometric ratio. However, the controlled growth of high-quality 2D ternary materials with good chemical stoichiometry remains challenging, which severely impedes their further development and future device applications. Herein, we synthesize ternary Bi_(2)Te_(2)Se(BTS) flakes with a thickness down to 4 nm and a lateral dimension about 60 μm by an atmospheric-pressure solid source thermal evaporation method on a mica substrate. The phonon vibration and electrical transportation of 2D BTS are respectively investigated by temperature-dependent Raman spectrum and conductivity measurements. Furthermore, the photodetector based on 2D BTS exhibits excellent performance with a high light on/off ratio of 1300(365 nm), a wide spectral response range from 365 to 980 nm, and an ultra-fast response speed up to 2 μs. In addition, its electrical and photoelectric properties can be modulated by the gate voltage, offering an improved infrared responsivity to 2.74 A W^(-1) and an on/off ratio of 2266 under 980 nm. This work introduces an effective approach to obtain 2D BTS flakes and demonstrates their excellent prospects in optoelectronics.展开更多
文摘Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch(PCSS) with an electrode distance of 4 mm. And made is an analysis of the switchs photovoltaic response characteristics under the high gain mode when the biased field is bigger than the Geng effect field. Also a theory is presented that the main reason for the photovoltaic pulse response delay is the transmission of charge domain, caused by the presence of EL2 energy level in the chip material. Finally, the transmission time of charge domain is calculated and a result that inosculates with the experiment is attained.
文摘Y90-62009-267 0003646电信与信号处理用的4×4宽带光电子开关=4×4broadband optoelectronic switch for telecommunicationsand signal processing[会,英]/Hnatiw,A.J.P.&Boerjes,D.W.//Proceedings of the 1998 South AfricanSymposium on Communications and Signal Processing(COMSIG’98).—267～270(PC)描述4GHz 宽带4×4光电子开关的结构、性能和应用。开关系采用混合集成技术构成,可配置为电入/电出或光入/光出。
基金supported by the National Natural Science Foundation of China (21825103)Hubei Provincial Natural Science Foundation of China (2019CFA002)the Fundamental Research Funds for the Central Universities (2019kfy XMBZ018)。
文摘Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the stoichiometric ratio. However, the controlled growth of high-quality 2D ternary materials with good chemical stoichiometry remains challenging, which severely impedes their further development and future device applications. Herein, we synthesize ternary Bi_(2)Te_(2)Se(BTS) flakes with a thickness down to 4 nm and a lateral dimension about 60 μm by an atmospheric-pressure solid source thermal evaporation method on a mica substrate. The phonon vibration and electrical transportation of 2D BTS are respectively investigated by temperature-dependent Raman spectrum and conductivity measurements. Furthermore, the photodetector based on 2D BTS exhibits excellent performance with a high light on/off ratio of 1300(365 nm), a wide spectral response range from 365 to 980 nm, and an ultra-fast response speed up to 2 μs. In addition, its electrical and photoelectric properties can be modulated by the gate voltage, offering an improved infrared responsivity to 2.74 A W^(-1) and an on/off ratio of 2266 under 980 nm. This work introduces an effective approach to obtain 2D BTS flakes and demonstrates their excellent prospects in optoelectronics.
