The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation l...The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.展开更多
As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are in...As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are inquired materials. Metal nanowires(NWs) with the excellent photoelectric properties as next-generation TE candidates have widely applications in smart optoelectronic devices such as electronic skins, wearable electronics, robotic skins, flexible and stretchable displays. This review describes the synthetic strategies for the preparation of metal NWs, the assemble process for metal NW films,and the practical aspects of metal NW films with the desired properties in various low-cost, flexible,and solution-based photoelectric devices.展开更多
文摘The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.
基金supported by the National Basic Research Program of China(2014CB931700)the Fundamental Research Funds for the Central Universities(30920130111017 and NE2012004)+1 种基金the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(IOSKL2012KF06)the Program for Eastern Scholar at Shanghai Institutions of Higher Learning(2012-53)
文摘As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are inquired materials. Metal nanowires(NWs) with the excellent photoelectric properties as next-generation TE candidates have widely applications in smart optoelectronic devices such as electronic skins, wearable electronics, robotic skins, flexible and stretchable displays. This review describes the synthetic strategies for the preparation of metal NWs, the assemble process for metal NW films,and the practical aspects of metal NW films with the desired properties in various low-cost, flexible,and solution-based photoelectric devices.
