The synthesis of high quality all-inorganic perovskite nanowires needs the harsh conditions,complex process and precision instruments,which are not beneficial to their extensive application.Here,all-inorganic perovski...The synthesis of high quality all-inorganic perovskite nanowires needs the harsh conditions,complex process and precision instruments,which are not beneficial to their extensive application.Here,all-inorganic perovskite ce- sium lead bromine (CsPbBr3)nanowires (NWs)are demonstrated with the combination of solution-phase process and halide exchange technology.A metal-semiconductor-metal structure CsPbBr3 nanowire photodetector was prepared, which showed a detectivity as high as 1.7×10^11 cm Hz^1/2W^-1 (Jones)with rapid response time (The rise and decay time are 10ms and 22 ms,respectively).Moreover,our photodetectors have high stability under ultraviolet (UV)light,high temperature and humidity.展开更多
The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intrigui...The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intriguing optical and electronic properties,making it an attractive photosensitive material for optoelectronic applications.However,the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS_(2)impedes its application in high-performance photodetectors.Herein,we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS_(2).In this device,1D Te induces in-plane strain in 2D WS_(2),which regulates the electronic structures of local WS_(2)and gives rise to type-Ⅱ band alignment in the horizontal direction.Moreover,the vertical heterojunction built of 2D WS_(2)and 1D Te introduces a high photoconductive gain.Benefiting from these two effects,the transfer of photogenerated carriers is optimized,and the proposed photodetector exhibits high sensitivity(photoresponsivity of ~27.7 A W^(-1),detectivity of 9.5×10^(12)Jones,and short rise/decay time of 19.3/17.6 ms).In addition,anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved.This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties,opening up a new avenue towards constructing multifunctional optoelectronic devices.展开更多
Inspired by the great success of ultrathin two-dimensional(2D)layered crystals,more and more attention is being paid to preparing 2D nanostructures from non-layered materials.They can significantly enrich the 2D mater...Inspired by the great success of ultrathin two-dimensional(2D)layered crystals,more and more attention is being paid to preparing 2D nanostructures from non-layered materials.They can significantly enrich the 2D materials and 2D heterostructures family,extend their application prospects,and bring us distinct properties from their bulk counterparts due to the strong 2D confinement effect.However,the realization of 2D non-layered semiconductors with strong light-harvesting capability and the ability to construct high-performance 2D heterostructures is still a critical challenge.Herein,we successfully synthesized 2D PbSe semiconductors with a large lateral dimension and ultrathin thickness via van der Waals epitaxy.The fabricated 2D PbSe device exhibits good electrical conductivity and superior multi-wavelength photoresponse performance with high responsivity(∼10^(3) A/W)and impressive detectivity(∼2×10^(11) Jones).Furthermore,we demonstrate that 2D PbSe nanosheets can serve as component units for constructing high-performance heterostructure devices.With our strategy,ultrahigh current on/off ratio(∼10^(8))and rectification ratio(∼10^()6),as well as high responsivity(∼3×10^(3) A/W)and detectivity(∼7×10^(12) Jones),can be achieved in PbSe/MoS_(2) back-gated transistors.These results indicate that 2D PbSe nanosheets and their heterostructures have tremendous applications potential in electrical and optoelectronic devices.展开更多
基金supported by the National Natural Science Foundation of China (51372075)
文摘The synthesis of high quality all-inorganic perovskite nanowires needs the harsh conditions,complex process and precision instruments,which are not beneficial to their extensive application.Here,all-inorganic perovskite ce- sium lead bromine (CsPbBr3)nanowires (NWs)are demonstrated with the combination of solution-phase process and halide exchange technology.A metal-semiconductor-metal structure CsPbBr3 nanowire photodetector was prepared, which showed a detectivity as high as 1.7×10^11 cm Hz^1/2W^-1 (Jones)with rapid response time (The rise and decay time are 10ms and 22 ms,respectively).Moreover,our photodetectors have high stability under ultraviolet (UV)light,high temperature and humidity.
基金supported by the National Natural Science Foundation of China(61805044,62004071 and 11674310)the Key Platforms and Research Projects of Department of Education of Guangdong Province(2018KTSCX050)+1 种基金Guangdong Provincial Key Laboratory of Information Photonics Technology(2020B121201011)"The Pearl River Talent Recruitment Program"(2019ZT08X639)。
文摘The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intriguing optical and electronic properties,making it an attractive photosensitive material for optoelectronic applications.However,the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS_(2)impedes its application in high-performance photodetectors.Herein,we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS_(2).In this device,1D Te induces in-plane strain in 2D WS_(2),which regulates the electronic structures of local WS_(2)and gives rise to type-Ⅱ band alignment in the horizontal direction.Moreover,the vertical heterojunction built of 2D WS_(2)and 1D Te introduces a high photoconductive gain.Benefiting from these two effects,the transfer of photogenerated carriers is optimized,and the proposed photodetector exhibits high sensitivity(photoresponsivity of ~27.7 A W^(-1),detectivity of 9.5×10^(12)Jones,and short rise/decay time of 19.3/17.6 ms).In addition,anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved.This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties,opening up a new avenue towards constructing multifunctional optoelectronic devices.
基金supported by the National Key R&D Program of China(2018YFA0703700)the National Natural Science Foundation of China(91964203,62104171,62104172,and 62004142)+2 种基金the Natural Science Foundation of Hubei Province(2021CFB037)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB44000000)the Fundamental Research Funds for the Central Universities(2042021kf0067)。
文摘Inspired by the great success of ultrathin two-dimensional(2D)layered crystals,more and more attention is being paid to preparing 2D nanostructures from non-layered materials.They can significantly enrich the 2D materials and 2D heterostructures family,extend their application prospects,and bring us distinct properties from their bulk counterparts due to the strong 2D confinement effect.However,the realization of 2D non-layered semiconductors with strong light-harvesting capability and the ability to construct high-performance 2D heterostructures is still a critical challenge.Herein,we successfully synthesized 2D PbSe semiconductors with a large lateral dimension and ultrathin thickness via van der Waals epitaxy.The fabricated 2D PbSe device exhibits good electrical conductivity and superior multi-wavelength photoresponse performance with high responsivity(∼10^(3) A/W)and impressive detectivity(∼2×10^(11) Jones).Furthermore,we demonstrate that 2D PbSe nanosheets can serve as component units for constructing high-performance heterostructure devices.With our strategy,ultrahigh current on/off ratio(∼10^(8))and rectification ratio(∼10^()6),as well as high responsivity(∼3×10^(3) A/W)and detectivity(∼7×10^(12) Jones),can be achieved in PbSe/MoS_(2) back-gated transistors.These results indicate that 2D PbSe nanosheets and their heterostructures have tremendous applications potential in electrical and optoelectronic devices.
