The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission d...The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.展开更多
Among the important optoelectronic devices, ultraviolet （UV） photodetectors show wide applications in fire monitoring, biological analysis, environmental sensors, space exploration, and UV irradiation detections. Re...Among the important optoelectronic devices, ultraviolet （UV） photodetectors show wide applications in fire monitoring, biological analysis, environmental sensors, space exploration, and UV irradiation detections. Research interest has focused on the utilization of one-dimensional （1D） metal oxide nanostructures to build advanced UV photodetectors through various processes. With large surface-to-volume ratio and well-controlled morphology and composition, 1D metal oxide nanostructures are regarded as promising candidates as components for building photodetectors with excellent sensitivity, superior quantum efficiency, and fast response speed. This article reviews the latest achievements with 1D metal oxide nanostructures reported over the past five years and their applications in UV light detection. It begins with an introduction of 1D metal oxide nanostructures, and the significance, key parameters and types of photo- detectors. Then we present several kinds of widely-studied 1D nanostructures and their photodetection performance, focusing on binary oxides with wide- bandgap （such as ZnO, SnO2, Ga203, Nb2Os, and WO3） and ternary oxides （such as Zn2SnO4, Zn2GeO4, and In2Ge2OT）. Finally, the review concludes with our perspectives and outlook on future research directions in this field.展开更多
A single cesium atom is trapped in a far-off-resonance optical dipole trap （FORT） from the magneto-optical trap （MOT） and directly imaged by using a charge-coupled device （CCD） camera. The binary single-atom ste...A single cesium atom is trapped in a far-off-resonance optical dipole trap （FORT） from the magneto-optical trap （MOT） and directly imaged by using a charge-coupled device （CCD） camera. The binary single-atom steps and photon anti-bunching are observed by a photon-counting-based HBT system using fluorescence light. The average atom dwelling time in the FORT is about 9 s. To reduce the background noise in the detection procedure we employ a weak probe laser tuned to the D1 line to il- lurninate the single atom from the direction perpendicular to the large-numerical-aperture collimation system. The second or- der degree of coherence g（2）（r）=0.12_＋0.02 is obtained directly from the fluorescence light of the single atom without deducting the background. The background light has been suppressed to 10 counts per 50 ms, which is much lower compared with the reported results. The measured g（2）（r） is in good agreement with theoretical analysis. The system provides a simple and effi- cient method to manipulate and measure single neutral atoms, and opens a way to create an efficient controlled single-photon source.展开更多
文摘The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.
文摘Among the important optoelectronic devices, ultraviolet （UV） photodetectors show wide applications in fire monitoring, biological analysis, environmental sensors, space exploration, and UV irradiation detections. Research interest has focused on the utilization of one-dimensional （1D） metal oxide nanostructures to build advanced UV photodetectors through various processes. With large surface-to-volume ratio and well-controlled morphology and composition, 1D metal oxide nanostructures are regarded as promising candidates as components for building photodetectors with excellent sensitivity, superior quantum efficiency, and fast response speed. This article reviews the latest achievements with 1D metal oxide nanostructures reported over the past five years and their applications in UV light detection. It begins with an introduction of 1D metal oxide nanostructures, and the significance, key parameters and types of photo- detectors. Then we present several kinds of widely-studied 1D nanostructures and their photodetection performance, focusing on binary oxides with wide- bandgap （such as ZnO, SnO2, Ga203, Nb2Os, and WO3） and ternary oxides （such as Zn2SnO4, Zn2GeO4, and In2Ge2OT）. Finally, the review concludes with our perspectives and outlook on future research directions in this field.
基金supported by the State Basic Key Research Program of China (Grant No. 2012CB921601)China National Funds for Distinguished Young Scientists (Grant No. 11125418)the National Natural Science Foundation of China (Grant Nos. 10974125,61121064 and60978017)
文摘A single cesium atom is trapped in a far-off-resonance optical dipole trap （FORT） from the magneto-optical trap （MOT） and directly imaged by using a charge-coupled device （CCD） camera. The binary single-atom steps and photon anti-bunching are observed by a photon-counting-based HBT system using fluorescence light. The average atom dwelling time in the FORT is about 9 s. To reduce the background noise in the detection procedure we employ a weak probe laser tuned to the D1 line to il- lurninate the single atom from the direction perpendicular to the large-numerical-aperture collimation system. The second or- der degree of coherence g（2）（r）=0.12_＋0.02 is obtained directly from the fluorescence light of the single atom without deducting the background. The background light has been suppressed to 10 counts per 50 ms, which is much lower compared with the reported results. The measured g（2）（r） is in good agreement with theoretical analysis. The system provides a simple and effi- cient method to manipulate and measure single neutral atoms, and opens a way to create an efficient controlled single-photon source.
