Experimental research of the heat and high-energy processes occurring in the cathode solid medium in the high voltage electric discharge system （electrolysis cell and glow discharge device） is presented. The experim...Experimental research of the heat and high-energy processes occurring in the cathode solid medium in the high voltage electric discharge system （electrolysis cell and glow discharge device） is presented. The experiments were carried out： Electrolysis in heavy water with a Pd cathode, electrolysis in light water with Ni and Pd cathodes, the glow discharge in deuterium with a Pd cathode. Excess heat was observed in experiments with high-voltage electrolysis （1,000 V or more）. The experiments showed that the maximum excess heat power values of 5-8 W for glow discharge and 180-280 W for high-voltage electrolysis and heat efficiency up to 170% for glow discharge, and 800% for high-voltage electrolysis. The production of impurity nuclide yield showing a shift of up to a few per cent from natural isotopic abundances was detected by spark mass spectrometry and by secondary ionic mass spectrometry. The authors propose based on these experimental results a phenomenological model for low energy nuclear reaction.展开更多
By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer,we propose a kind of Mach-Zehnder interferometer(MZI) electro-optic(EO) switch operated at 1 550 nm.Struc...By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer,we propose a kind of Mach-Zehnder interferometer(MZI) electro-optic(EO) switch operated at 1 550 nm.Structural parameters are optimized for realizing normal switching function.Dependencies of switching characteristics on the slot waveguide parameters are investigated.For the silicon strip with dimension of 170 nm×300 nm,as the slot width varies from 50 nm to 100 nm,the switching voltage can be as low as 1.0 V with active region length of only 0.17–0.35 mm,and the length of the whole device is only about 770–950 μm.The voltage-length product of this switching structure is only 0.17–0.35 V·mm,and it is at least 19–40 times smaller than that of the traditional polymer MZI EO switch,which is 6.69 V·mm.Compared with our previously reported MZI EO switches,this switch exhibits some superior characteristics,including low switching voltage,compact device size and small wavelength dependency.展开更多
文摘Experimental research of the heat and high-energy processes occurring in the cathode solid medium in the high voltage electric discharge system （electrolysis cell and glow discharge device） is presented. The experiments were carried out： Electrolysis in heavy water with a Pd cathode, electrolysis in light water with Ni and Pd cathodes, the glow discharge in deuterium with a Pd cathode. Excess heat was observed in experiments with high-voltage electrolysis （1,000 V or more）. The experiments showed that the maximum excess heat power values of 5-8 W for glow discharge and 180-280 W for high-voltage electrolysis and heat efficiency up to 170% for glow discharge, and 800% for high-voltage electrolysis. The production of impurity nuclide yield showing a shift of up to a few per cent from natural isotopic abundances was detected by spark mass spectrometry and by secondary ionic mass spectrometry. The authors propose based on these experimental results a phenomenological model for low energy nuclear reaction.
基金supported by the National Natural Science Foundation of China(Nos.61107021,61177027 and 61077074)the Ministry of Education of China(Nos.20110061120052 and 20120061130008)the Science and Technology Department of Jilin Province of China(No.20130522161JH)
文摘By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer,we propose a kind of Mach-Zehnder interferometer(MZI) electro-optic(EO) switch operated at 1 550 nm.Structural parameters are optimized for realizing normal switching function.Dependencies of switching characteristics on the slot waveguide parameters are investigated.For the silicon strip with dimension of 170 nm×300 nm,as the slot width varies from 50 nm to 100 nm,the switching voltage can be as low as 1.0 V with active region length of only 0.17–0.35 mm,and the length of the whole device is only about 770–950 μm.The voltage-length product of this switching structure is only 0.17–0.35 V·mm,and it is at least 19–40 times smaller than that of the traditional polymer MZI EO switch,which is 6.69 V·mm.Compared with our previously reported MZI EO switches,this switch exhibits some superior characteristics,including low switching voltage,compact device size and small wavelength dependency.
