光致发光法检测用于转移电子器件的GaAs材料

转移电子器件是一种常用的微波固体功率源,制备转移电子器件常用的材料是n-GaAs单晶,目前国内对n-GaAs单晶质量的在线检测主要测量它的电学参数.但是在器件生产中发现,即使用电学参数相同的材料制备器件,仍会出现成品率高低浮动.已有人用光致发光法研究GaAs材料性质.本文报道用光致发光法在线检测转移电子器件材料质量.测量结果表明,电学参数测量符合要求时,制备转移电子器件成品率较低的n-GaAs外延片中存在较高浓度的施主杂质与Ga空位的络合物.

低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析

用低压MOCVD方法生长了InGaAs/InP单量子阱及多量子阱结构。用低温光致发光方法研究了量子阱样品因量子尺寸效应引起的激子能量移动以及激子谱线线宽同量子阱阱宽的关系,7A阱宽的激子能量移动达370meV。选取Q_c=△E_c/△E_g=0.4,采用修正后的Kronig-Penny模型,考虑能带的非抛物线性,拟合了激子能量移动和阱宽的关系曲线。用有效晶体近似方法(VCA)分析了激子尺寸范围内界面不平整度以及合金组分无序对激子谱线线宽的影响。以界面不平整度参量δ_1和δ_2,合金组分元序参量r_c为拟合参数,拟合了激子线宽对阱宽的关系曲线。取δ_1=2.93A,δ_2=100A,r_c=3ML,理论拟合值与实验值符合较好。

半导体纳米材料显现潜在手印技术的研究新进展

自纳米技术引入到法庭科学领域以来,因其独特的优势,拓宽了手印技术工作人员的思路,受到了国内外法庭科学家的青睐,成为当前国内外手印学科学家研究的热点。本文主要介绍了半导体纳米材料显现手印的概念特点,并就半导体纳米材料显现手印技术的发展历程和最新进展作了较为详细的归纳和总结。

纳米材料显现潜在指纹的研究

目前,潜在指纹显现技术面临两大难题需要解决。一方面,情况复杂的客体以及遗留时间过长的陈旧指纹样品需要显现技术具有空前的灵敏度;另一方面,粉末刷显法以及有毒有害显现试剂亟需得到替换和改善,以确保技术工作人员的身体健康。鉴于上述情况,近年来技术工作人员开始将纳米技术同光致发光法相结合,并应用于潜在指纹的显现,旨在推出一种高效、无毒、无损、价廉的潜在指纹显现技术,以期能够突破潜在指纹显现技术发展的瓶颈状态。

Microwave-hydrothermal preparation of flower-like ZnO microstructure and its photocatalytic activity

The flower-like ZnO microstructure was prepared by a straightforward microwave-hydrothermal technique using zinc chloride and arginine solution as reactants. The as-synthesized crystal structure and morphology were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and the optical properties of the ZnO nanostructure were studied by Raman and photoluminescence （PL） spectra, which confirms the high crystal quality of ZnO microstructure. The as-synthesized ZnO flowers exhibit a significant enhancement of photocatalytic capability toward degrading methyl blue （MB） under UV light, the photodegradation of MB reaches 95.60%, only within 2 h of adding the as-synthesized ZnO in the MB solution under UV irradiation. Furthermore, the photodegradation could be described as the pseudo-first-order kinetics with degradation rate constant of 1.0675-1.6275 h-1, which is relative to the morphology of the structures.

Synthesis and Luminescence Property of Hierarchical Europium Oxalate Micropaticles

Hierarchical europium oxalate Eu2（C2O4）3.10H2O micro-particles were synthesized through a simple precipitation method at room temperature in present of trisodium citrate. The products were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and photoluminescence. The possible formation mechanism of the hierarchical europium oxalate Eu2（C2O4）3.10H2O micro-particles was discussed.

Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots

Self-organized In 0.5 Ga 0.5 As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1/(GaAs) 1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In 0.5 Ga 0.5 As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.

Synthesis and growth mechanism of SiC/SiO2 nanochains by catalyst-free thermal evaporation method in Ar/CO atmosphere

SiC/SiO2 nanochains were synthesized on a carbon fiber substrate by a catalyst-free thermal evaporation method in the Ar/CO atmosphere.X-ray diffraction(XRD),Fourier-transform infrared spectroscopy(FT-IR),scanning electron microscopy(SEM)and transmission electron microscopy(TEM)revealed that the as-synthesized SiC/SiO2 nanochains are composed of single-crystalline SiC nanowires and amorphous SiO2 beads.The introduction of CO can promote the formation of SiO2,so that the SiC/SiO2 nanochains are subsequently formed during cooling.In addition,the photoluminescence spectrum of SiC/SiO2 nanochains showed a broad emission peak at around 350 nm,which is ascribed to the oxygen discrepancy in the SiO2 beads as well as the SiC/SiO2 interfacial effect.These findings can provide guidance for further study of the vapor growth of 1D SiC-based materials.

Optical Properties of Silicon-doped InGaN and GaN Layers

The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width of half-maximum (FWHM) is about 14.3 nm. The band-gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increasing of the temperature. GaN sample shows red-shift, InGaN sample shows red-blue-red-shift. The temperature dependence of peak energy shift is studied and explained.

Study on Microcavity Organic Light-emitting Devices Containing Negative Refractive Index Dielectric Layer

A new structure containing negative refractive index dielectric layer（NRlDL） is introduced into microcavity. The properties of the new mierocavity organic light-emitting devices（MOLEDs） are investigated. In the experiment, the transfer matrix method is adopted. The dependence of reflectance and transmittance on the refractive index and thickness of NRIDL are analyzed in detail. Compared with the electroluminescence spectra of non-NRIDL diodes, the line widths of the spectra of the MOLEDs are narrower and all the peaks enhance. The results show that the new structure is beneficial to improve the performance and reduce the thickness of microcavity devices.

Direct vapor phase growth process and robust photoluminescence properties of large area MoS2 layers

There has been growing research interest in the use of molybdenum disulfide in the fields of optoelectronics and energy harvesting devices, by virtue of its indirect-to-direct band gap tunability. However, obtaining large area thin films of MoS2 for future device applications still remains a challenge. In the present study, the amounts of the precursors （S and MOO3） were varied systematically in order to optimize the growth of highly crystalline and large area MoS2 layers by the chemical vapor deposition method. Careful control of the amounts of precursors was found to the key factor in the synthesis of large area highly crystalline flakes. The thickness of the layers was confirmed by Raman spectroscopy and atomic force microscopy. The optical properties and chemical composition were studied by photoluminescence （PL） and X-ray photoelectron spectroscopy. The emergence of strong direct excitonic emissions at 1.82 eV （A-exciton, with a normalized PL intensity of -55 × 10^3） and 1.98 eV （B-exciton, with a normalized PL intensity of -5 × 10^3） of the sample at room temperature clearly indicates the high luminescence quantum efficiency. The mobility of the films was found to be 0.09 cm^2/（V.s） at room temperature. This study provides a method for the controlled synthesis of high-quality two-dimensional （2D） transition metal dichalcogenide materials, useful for applications in nanodevices, optoelectronics and solar energv conversion.

Visible photoluminescence from ZnO/diamond-like carbon thin films

ZnO/diamond-like carbon (DLC) thin films are deposited by pulsed laser deposition (PLD) on Si (111) wafer. Visible room-temperature photoluminescence (PL) is observed from ZnO/DLC thin films by fluorescence spectrophotometer. The Gaussian curve fitting of PL spectra reveals that the broadband visible emission contains three components with λ=508 nm, 554 nm and 698 nm. The origin and possible mechanism of the visible PL are discussed, and they can be attributed to the PL recombination of ZnO and DLC thin films.

Profile-broaden ultraviolet lasing from whispering gallery mode cavity in crown-like zinc oxide

The crown-like zinc oxide(Zn O)samples,which are composed of a hexagonal cap and a tower-like shaft,are prepared by vapor transport method.The hexagonal cap,working as a whispering gallery mode(WGM)resonant cavity,demonstrates density-dependent ultraviolet(UV)lasing emission with a broadened and squared photoluminescence(PL)profile under UV excitation at 355 nm.Theoretical analyses based on Fermi golden rule show that the broadened spectrum profile results from the special optical mode density characteristics in a WGM micro-cavity,which is in agreement with the observed results.

Photoluminescence and surface photovoltage properties of Zn Se nanoribbons

ZnSe nanoribbons were synthesized with chemical vapor deposition route. The excitation power-dependent photol and surface photovoltage （SPV） techniques were used to study the optoelectronic properties of the as-grown ZnSe nanoribbons. Three deep defect （DD）-related emission bands, respectively, centered at 623 nm （DD1）, 563 nm （DD2） and 525 nm （DD3）, emerge orderly with increasing the excitation power, which is attributed to the saturation of the DD states from deeper to shallower level. The SPV spectrum and the corresponding phase spectrum show that DD1 mainly acts as recombination center, while DD2 and DD3 can act as both the recombination center and electron traps. The influence of the trapping electrons on the SPV response dynamic was studied with transient SPV.

Facile synthesis of Ca-SiAlON:Eu^(2+) phosphor by the microwave sintering method and its photoluminescence properties

Pure Ca-SiAlON:Eu2+ was synthesized by microwave sintering method at a relatively low temperature of 1550℃.Photoluminescence intensity of the resultant phosphor was higher than those of the samples synthesized by conventional gas-pressure sintering technique at 1750℃.When it was excited at 450 nm,the as-prepared yellow Ca-SiAlON:Eu2+ sample had an external quantum efficiency of 42%,comparable to the sample synthesized at 1750℃ under 0.5 MPaN2 gas pressure by the GPS method reported in reference.The experimental results demonstrated that the microwave sintering method was also an interesting approach for synthesizing nitride phosphors,which promises lower firing temperature than those by carbothermal reduction and nitridation (CRN) methods,higher heating rate and shorter duration time compared with those by gas-pressure sintering.

Nanoseparation-lnspired Manipulation of the Synthesis of CdS Nanorods

CdS nanorods have been sorted by length using a density gradient ultracentrifuge rate separation method. The fractions containing longer rods showed relatively stronger oxygen-related surface trap emission, while the shorter ones had dominant band-edge emission. These results suggest that the final length distribution of CdS nanorods is not a result of random nucleation and growth, but is related to the local synthesis conditions. Inspired by these findings, different synthesis environments （N2, air, and 02） have been employed in order to tailor the length distribution. In addition to the rod length, the photoluminescence properties of CdS nanorods can also be manipulated. Increasing the oxygen partial pressure significantly changed the growth behavior of CdS nanorods by improving the anisotropic growth.

Effects of post-annealing treatment on the structure and photoluminescence properties of CdS/PS nanocomposites prepared by sol-gel method

CdS nanocrystals have been successfully grown on porous silicon(PS) by sol-gel method. The plan-view field emission scanning electron microscopy(FESEM) shows that the pore size of PS is smaller than 5 μm in diameter and the agglomerates of Cd S are broadly distributed on the surface of PS substrate. With the increase of annealing time, the Cd S nanoparticles grow in both length and diameter along the preferred orientation. The cross-sectional FESEM images of Zn O/PS show that Cd S nanocrystals are uniformly penetrated into all PS layers and adhere to them very well. photoluminescence(PL) spectra demonstrate that the intensity of PL peak located at about 425 nm has almost no change after the annealing time increases. The range of emission wavelength of Cd S/PS is from 425 nm to 455 nm and the PL intensity is decreasing with the annealing temperature increasing from 100 °C to 200 °C.