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光致型形状记忆高分子材料分析
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作者 李闯 《橡塑技术与装备》 CAS 2016年第12期61-62,共2页
近年来,形状记忆高分子材料在工业生产中得到广泛的应用,光致型形状记忆高分子材料是其中的一个重要分支,其使用中体现出来较强的优势。本文从光化学反应型以及光热效应型的角度对光致型形状记忆高分子材料进行了分析,并在此基础上分析... 近年来,形状记忆高分子材料在工业生产中得到广泛的应用,光致型形状记忆高分子材料是其中的一个重要分支,其使用中体现出来较强的优势。本文从光化学反应型以及光热效应型的角度对光致型形状记忆高分子材料进行了分析,并在此基础上分析了光致型形状记忆高分子材料的应用。 展开更多
关键词 形状记忆 高分子材料 光致型 分析
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形状记忆高分子材料的发展及应用概况 被引量:9
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作者 温红梅 修雪颖 +4 位作者 和晗 吴婧华 鹿丽 管寒靖 夏琳 《特种橡胶制品》 2018年第5期64-68,共5页
介绍了形状记忆高分子材料的分类、制备方法及应用概况,并指出形状记忆聚合物材料的研究方向。
关键词 形状记忆高分子材料 致型 光致型
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Optical and Electrical Properties of GaN:Mg Grown by MOCVD
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作者 王莉莉 张书明 +1 位作者 杨辉 梁骏吾 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期29-32,共4页
Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature (RT) Hall and photoluminescence (PL) spectroscopy measurements were perf... Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were annealed at temperatures between 550 and 950℃. Room temperature (RT) Hall and photoluminescence (PL) spectroscopy measurements were performed on the as-grown and annealed samples. After annealing at 850℃, a high hole concentration of 8 × 10^17 cm^-3 and a resistivity of 0. 8lΩ·cm are obtained. Two dominant defect-related PL emission bands in GaN.. Mg are investigated; the blue band is centered at 2. 8eV (BL) and the ultraviolet emission band is around 3.27eV (UVL). The relative intensity of BL to UVL increases after annealing at 550℃, but decreases when the annealing temperature is raised from 650 to 850℃, and finally increases sharply when the annealing temperature is raised to 950~C. The hole concentration increases with increased Mg doping, and decreases for higher Mg doping concentrations. These results indicate that the difficulties in achieving high hole concentration of 10^18cm^-3 appear to be related not only to hydrogen passivation, but also to self-compensation. 展开更多
关键词 Hall effect PHOTOLUMINESCENCE P-GAN
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Effects of selective laser melting process parameters on powder formability of Ti6Al4V 被引量:2
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作者 LI Jing BAI Pei-kang +1 位作者 WANG Jian-hong ZHANG Ge 《Journal of Measurement Science and Instrumentation》 CAS CSCD 2018年第1期88-91,共4页
Taking Ti6Al4V titanium alloy powder as the research object,on the basis of single layer scanning and single channel scanning experiment,this paper studies the influence of selective laser melting(SLM)process paramete... Taking Ti6Al4V titanium alloy powder as the research object,on the basis of single layer scanning and single channel scanning experiment,this paper studies the influence of selective laser melting(SLM)process parameters on Ti6Al4V alloy material formability,and block forming experiment is carried out.Through the design of orthogonal experiment,morphology observation of sample and density analysis,results show that the best block molding parameters of SLM technology in Ti6Al4V alloy powder are laser power of 400 W,lap rate of 1 and the scanning speed of 750 mm/min,density can up to 96.17%. 展开更多
关键词 selective laser melting(SLM) Ti6Al4V powder powder formability DENSITY
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Spectra analysis and O_2 evolution for TiO_2 photocatalyst compounded with indirect transition semiconductors 被引量:2
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作者 童海霞 柴立元 张馨睿 《Journal of Central South University》 SCIE EI CAS 2012年第9期2425-2433,共9页
The photo absorbing, photo transmitting and photoluminescence performances of WiO2 photocatalysts compounded with V2O5 or WO3 were investigated by UV-Vis spectra, transmitting spectra, and PL spectra, respectively. Th... The photo absorbing, photo transmitting and photoluminescence performances of WiO2 photocatalysts compounded with V2O5 or WO3 were investigated by UV-Vis spectra, transmitting spectra, and PL spectra, respectively. The energy band structures of TiO2 photocatalysts were analyzed. The photocatalytic activities of the TiO2 photocatalysts were investigated by splitting of water for 02 evolution. The results indicate that the band gaps of WO3 and V205 are about 2.8 and 2.14 eV, respectively, and the band gap of rutile TiO2 is about 3.08 eV. Speeds of water splitting for 2%WO3-TiO2 and 8%V2O5-TiO2 photocatalysts are 420 and 110 μmol/(L.h), respectively, under UV light irradiation. V2O5 and WO3 compounded with suitable concentration can improve the photocatalytic activity of TiO2 with Fe3+ as electron acceptor. 展开更多
关键词 TiO2 photocatalyst indirect transition semiconductor spectra analysis photo splitting water 02 evolution
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Light-Induced Hofstadter's Butterfly Spectrum in Optical Lattices
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作者 HOU Jing-Min 《Communications in Theoretical Physics》 SCIE CAS CSCD 2009年第3期441-444,共4页
We propose a scheme to create an effective magnetic field, which can be perceived by cold neutral atoms in a two-dimensional optical lattice, with a laser field with a space-dependent phase and a conventional laser fi... We propose a scheme to create an effective magnetic field, which can be perceived by cold neutral atoms in a two-dimensional optical lattice, with a laser field with a space-dependent phase and a conventional laser field acting on A-type three-level atoms. When the dimensionless parameter a, being the ratio of flux through a lattice cell to one flux quantum, is rational, the energy spectrum shows a fractal band structure, which is so-called Hofstadter's butterfly. 展开更多
关键词 optical lattices cold atoms Hofstadter's butterfly
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Construction of Type I Aggregation-Induced Emission Photosensitizers for Photodynamic Therapy via Photoinduced Electron Transfer Mechanism
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作者 Jia Hanyu Yu Yuewen +1 位作者 Feng Guangxue Tang Ben Zhong 《有机化学》 SCIE CAS CSCD 北大核心 2024年第8期2530-2537,共8页
Photodynamic therapy(PDT)as a non-invasive anticancer modality has received increasing attention due to its advantages of noninvasiveness,high temporospatial selectivity,simple and controllable operation,etc.PDT mainl... Photodynamic therapy(PDT)as a non-invasive anticancer modality has received increasing attention due to its advantages of noninvasiveness,high temporospatial selectivity,simple and controllable operation,etc.PDT mainly relies on the generation of toxic reactive oxygen species(ROS)by photosensitizers(PSs)under the light irradiation to cause cancer cell apoptosis and death.However,solid tumors usually exhibit an inherent hypoxic microenvironment,which greatly limits the PDT efficacy of these high oxygen-dependent conventional type II PSs.Therefore,it is of great importance to design and develop efficient type I PSs that are less oxygen-dependent for the treatment of hypoxic tumors.Herein,a new strategy for the preparation of efficient type I PSs by introducing the photoinduced electron transfer(PET)mechanism is reported.DR-NO_(2) is obtained by introducing 4-nitrobenzyl to(Z)-2-(5-(4-(diethylamino)-2-hydroxybenzylidene)-4-oxo-3-phenylthiazolidin-2-ylidene)malononitrile(DR-OH)with aggregation-induced emission(AIE)feature.The AIE feature ensures their high ROS generation efficiency in aggregate,and the PET process leads to fluorescence quenching of DR-NO_(2) to promote triplet state formation,which also promotes intramolecular charge separation and electron transfer that is conducive for type I ROS particularly superoxide radicals generation.In addition,DR-NO_(2) nanoparticles are prepared by nanoprecipitation to possess nanoscaled sizes,high cancer cell uptake,and excellent type I ROS generation ability,which results in an excellent performance in PDT ablation of MCF-7 cancer cells.This PET strategy for the development of type I PSs possesses great potential for PDT applications against hypoxic tumors. 展开更多
关键词 photodynamic therapy aggregation-induced emission photoinduced electron transfer type I photosensitizer hypoxic tumor microenvironment
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Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3) 被引量:1
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作者 GAO HanChao YIN ZhiJun +2 位作者 CHENG Wei LI ZhongHui XIE ZiLi 《Science China(Technological Sciences)》 SCIE EI CAS 2012年第11期3200-3203,共4页
Photoluminescence properties of highly p+-doped GaASl_ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg(GaAsl_ySby)=l.25y2-1.95y+1.519 is ob... Photoluminescence properties of highly p+-doped GaASl_ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg(GaAsl_ySby)=l.25y2-1.95y+1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level (El) and full width at half maximum (FWHM) of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases. 展开更多
关键词 molecular beam epitaxy PHOTOLUMINESCENCE semiconducting III-V materials
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