The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are ...The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.展开更多
CdSe nanocrystals were prepared by a colloidal chemical approach using CdO and Se powder as precursors in an organic system of TOPO/TOP, and a multilayered electroluminescence device was fabricated with CdSe as emitti...CdSe nanocrystals were prepared by a colloidal chemical approach using CdO and Se powder as precursors in an organic system of TOPO/TOP, and a multilayered electroluminescence device was fabricated with CdSe as emitting layer. The results show that the photoluminescence spectra of the CdSe nanocrystals almost cover the whole visible region and the full width at half maximum （FWHM） is appropriately 200 nm. The electroluminescence spectrum of the multilayered device at different voltages was investigated. The electroluminescence intensity is enhanced with increasing operating voltage, and the CIE coordinates of the device change from （0.3,0.37） at 6 V to （0. 44,0. 46）at 20 V as the operating voltage increases,which indicates that the colors of the device could be tuned by the operatina voltage.展开更多
The investigations on Ge-implanted GaN films grown by MOCVD and then annealed at 1100℃ under ammonia ambient have been carried out. With increasing Ge implantation dose, four additional peaks arise at wave numbers of...The investigations on Ge-implanted GaN films grown by MOCVD and then annealed at 1100℃ under ammonia ambient have been carried out. With increasing Ge implantation dose, four additional peaks arise at wave numbers of 260, 314, 428 and 670cm -1 in Ramam spectra. In PL spectra, the relative intensity of the band-edge emission compared to the PL-band centered at 2.66eV and the yellow band decreases with increase of Ge-implanted dose. The modes of 260 and 314cm -1 are attributed to disorder-activated Raman scattering, whereas the modes of 428 and 670cm -1 are assigned to local vibrations of vacancies and vacancy-related complexes. The PL-band centered at 2.66eV and the yellow band is also related to these vacancy defects. The new Raman peak at 301cm -1 for the sample annealed only 5min originates from Ge clusters due to deficient annealing.展开更多
A method to control the size of nanoscale silicon grown in thermally annealed hydrogenated amorphous silicon （a-Si：H） films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffract...A method to control the size of nanoscale silicon grown in thermally annealed hydrogenated amorphous silicon （a-Si：H） films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, it is found that the sizes of the formed silicon particles change with the temperature rising rate in thermally annealing the a-Si ： H films. When the a-Si：H films have been annealed with high rising rate（～100℃/s）, the sizes of nanoscale silicon particles are in the range of 1.6～15nm. On the other hand, if the a-Si：H films have been annealed with low temperature rising rate（～1℃/s）, the sizes of nanoscale silicon particles are in the range of 23～46nm. Based on the theory of crystal nucleation and growth, the effect of temperature rising rate on the sizes of the formed silicon particles is discussed. Under high power laser irradiation, in situ nanocrystallization and subsequent nc-Si clusters are small enough for visible light emission, authors have not detected any visible photoluminescence（PL） from these nc-Si clusters before surface passivation. After electrochemical oxidization in hydrofluoric acid, however, intense red PL has been detected. Cyclic hydrofluoric oxidization and air exposure can cause subsequent blue shift in the red emission. The importance of surface passivation and quantum confinement in the visible emissions has been discussed.展开更多
Photoluminescence (PL) of Bi12GeO20 and Mo doped Bi12GeO20 (Mo: Bi12GeO20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray diffraction analysis, absorption and Raman scattering spectra...Photoluminescence (PL) of Bi12GeO20 and Mo doped Bi12GeO20 (Mo: Bi12GeO20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray diffraction analysis, absorption and Raman scattering spectra of these crystals were also measured. Pure Bi12GeO20 after annealing in N2 atmosphere at 450 oC and 550 °C show predominant emissions at about 745 and 1250 nm bands, while the emission peaks of Mo:Bi12GeO20 crystals untreated or after annealing in Ar at 300 °C are at around 538 and 1165 nm. The results suggest that annealing induces intrinsic luminescence of Bi in pure Bi12GeO20 at room temperature and Mo influences the luminescence centers of Bi12GeO20. The emission peaks of Bi12GeO20 and Mo: Bi12GeO20 probably owe to lower-valent Bi ions.展开更多
文摘The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.
基金Supported by the National Natural Science Foundation of China( No.90301004 ,No.10434030 and No.60406005)the"973"National Key Basic Research Special Foundation of China ( No.2003CB314707) the NewStar Programfor Science and Technol-ogy of Beijing City(No.2004B10)
文摘CdSe nanocrystals were prepared by a colloidal chemical approach using CdO and Se powder as precursors in an organic system of TOPO/TOP, and a multilayered electroluminescence device was fabricated with CdSe as emitting layer. The results show that the photoluminescence spectra of the CdSe nanocrystals almost cover the whole visible region and the full width at half maximum （FWHM） is appropriately 200 nm. The electroluminescence spectrum of the multilayered device at different voltages was investigated. The electroluminescence intensity is enhanced with increasing operating voltage, and the CIE coordinates of the device change from （0.3,0.37） at 6 V to （0. 44,0. 46）at 20 V as the operating voltage increases,which indicates that the colors of the device could be tuned by the operatina voltage.
基金Natural Science Foundation from Huaihai Institute of Technology(Z2004031)
文摘The investigations on Ge-implanted GaN films grown by MOCVD and then annealed at 1100℃ under ammonia ambient have been carried out. With increasing Ge implantation dose, four additional peaks arise at wave numbers of 260, 314, 428 and 670cm -1 in Ramam spectra. In PL spectra, the relative intensity of the band-edge emission compared to the PL-band centered at 2.66eV and the yellow band decreases with increase of Ge-implanted dose. The modes of 260 and 314cm -1 are attributed to disorder-activated Raman scattering, whereas the modes of 428 and 670cm -1 are assigned to local vibrations of vacancies and vacancy-related complexes. The PL-band centered at 2.66eV and the yellow band is also related to these vacancy defects. The new Raman peak at 301cm -1 for the sample annealed only 5min originates from Ge clusters due to deficient annealing.
文摘A method to control the size of nanoscale silicon grown in thermally annealed hydrogenated amorphous silicon （a-Si：H） films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, it is found that the sizes of the formed silicon particles change with the temperature rising rate in thermally annealing the a-Si ： H films. When the a-Si：H films have been annealed with high rising rate（～100℃/s）, the sizes of nanoscale silicon particles are in the range of 1.6～15nm. On the other hand, if the a-Si：H films have been annealed with low temperature rising rate（～1℃/s）, the sizes of nanoscale silicon particles are in the range of 23～46nm. Based on the theory of crystal nucleation and growth, the effect of temperature rising rate on the sizes of the formed silicon particles is discussed. Under high power laser irradiation, in situ nanocrystallization and subsequent nc-Si clusters are small enough for visible light emission, authors have not detected any visible photoluminescence（PL） from these nc-Si clusters before surface passivation. After electrochemical oxidization in hydrofluoric acid, however, intense red PL has been detected. Cyclic hydrofluoric oxidization and air exposure can cause subsequent blue shift in the red emission. The importance of surface passivation and quantum confinement in the visible emissions has been discussed.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60778036, 60938001, 61078053, 51002175)the Science and Technology Commission of Shanghai Municipality (Grant No. 09JC1415300)the Hundred Talents Project of the Chinese Academy of Sciences
文摘Photoluminescence (PL) of Bi12GeO20 and Mo doped Bi12GeO20 (Mo: Bi12GeO20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray diffraction analysis, absorption and Raman scattering spectra of these crystals were also measured. Pure Bi12GeO20 after annealing in N2 atmosphere at 450 oC and 550 °C show predominant emissions at about 745 and 1250 nm bands, while the emission peaks of Mo:Bi12GeO20 crystals untreated or after annealing in Ar at 300 °C are at around 538 and 1165 nm. The results suggest that annealing induces intrinsic luminescence of Bi in pure Bi12GeO20 at room temperature and Mo influences the luminescence centers of Bi12GeO20. The emission peaks of Bi12GeO20 and Mo: Bi12GeO20 probably owe to lower-valent Bi ions.
