GeSe_2非晶半导体薄膜中光致结构及性能变化

运用X射线衍射分析、红外光谱分析、扫描电镜分析和透射光谱分析 ,研究了GeSe2 非晶半导体薄膜经5 14.5nm波长的氩离子激光辐照后的结构及性能变化。实验结果表明 ,经热处理和激光辐照后 ,薄膜的光学吸收边均移向短波长处 ,这种移动随着辐照激光强度和辐照时间的增加而增大 ,并且在退火薄膜中是可逆的。扫描电镜分析结果表明 ,薄膜在激光辐照后有微晶析出 ,这种微晶的析出量随着辐照激光强度的增强而增加。

Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure

The photoluminescence （PL） and Raman spectra of undoped ZnO films deposited directly on Si substrate （sample A）,on Si substrate through a SiC buffer layer （sample B）,and on a ZnO crystal wafer （sample C） are investigated. There are emission peaks centered at 3.18eV （ultraviolet,UV） and 2.38eV （green） in these sampies. Comparing the Raman spectra and the variation of the PL peak intensities with annealing atmosphere, we conclude that the luminescence of the samples is related to the tensile strain in the ZnO film due to the lattice mismatch between the film and the substrate. In particular, the tensile strain reduces the formation energy of OZn antisite oxygen defects,which generate the green emission center. After annealing in oxygen-rich atmosphere, many OZn defects are generated. Thus, the intensity of green emission in ZnO/Si hetero-structure materials increases due to tensile strain in ZnO films.

Fabrication of curved micro structures on photoresist layer

A novel fabrication process for micro patterns with curvature was introduced. The curved structures were made by compensating rectangular micro structures with liquid photoresist layer. Because of the surface tension of the liquid in micro scale, various shapes of meniscus can he made on the micro channels. The micro channels were made on the silicon suhstrate in advance, and then the liquid layer was coated on the micro channels. From the nature of liquid behavior, the curved patterns with smooth surface are obtained, which cannot be made easily with the conventional mechanical machining, as well as with the microfabrication processes, such as wet and dry etching. With this principle, it is expected that the smooth and curved surfaces can be made by simple processes and the results can be applied widely, such as optical patterns.

Exciplex formation and properties at organic solid interface in organic light emitting devices

The bilayer organic light emitting devices （OLEDs） using two common aromatic diamines as hole transporting materials （HTMs） and BBOT （2,5-bis（5-tert-butyl-2-benzoxazolyl）thiophene） as electron transporting material have been prepared, in which the electroluminescent spectra are different from the fluorescent spectra of each of the constituent materials. The electroluminescence is mainly attributed to exciplex confirmed by photoluminescence and electroluminescence measurements, and the type of exicplex is deternfined in terms of the energy level diagram of the bilayer devices, By comparing the molecular structures and energy levels of TPD and NPB, it is demonstrated that the structure of a molecule as well as its energy level has an effect on the exciplex formation.

Microcrystallin eStructure and Luminescence of ZnS Thin Films

The electroluminescence thin films doped with erbium, fabricated by thermal evaporation with two boats, are analyzed by X-ray diffraction (XRD). The relationship between electroluminescence brightness and microstructure of the thin films is obtained. The results reveal that the large grain size in high index plane of deposited microcrystalline film has an effect on electroluminescence characteristics of the film devices.

Effect of BCP ultrathin layer on the performance of organic light-emitting devices

Based on conventional double layer device, triple layer organic light-emitting diodes (OLEDs) with two heterostructures of indium-tin oxide (ITO)/N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine(NPB)/2,9-dimethyl-4,7-diphenyl- 1,10-phenanthroline (BCP)/ 8-Hydroxyquinoline aluminum (Alq3)/Mg:Ag using vacuum deposition method have been fabricated. The influence of different film thickness of BCP layer on the performance of OLEDs has been investigated. The results showed that when the thickness of the BCP layer film gradually varied from 0.1 nm to 4.0 nm, the electrolumines- cence (EL) spectra of the OLEDs shifted from green to greenish-blue to blue, and the BCP layer acted as the recombination region of charge carriers related to EL spectrum, enhancing the brightness and power efficiency. The power efficiency of OLEDs reached as high as 7.3 lm/W.

Fabrication of Alq_3/PBD OMQW Structures and Its Photoluminescence Characteristics

Abstract: Organic multiple quantum well(OMQ) structures consisting of alternating layers of tris(8 - quinolinolato)aluminum( ff) (Alq3) and 2 - (4 - biphenylyl) -5 - (4 - ter - butylphenyl) -(1,3,3- oxadiazole) (PBD) have been fabricated by organic molecular beam deposition (OMBD). The individual layer thickness in the multilayer samples was varied from 6 nm to 20 nm. The multiple quantum well structures were determined by low angle X - ray diffraction, optical absorption and photolumi-nescence(PL). The PL spectra narrow and the emission energy has been observed to shift to higher energy compared with that in the monolayer structure, suggesting a quantum size effect.

Self-assembled flower-like microstructure in Zn_(1-x)Cd_xO nanoparticles

The structural and optical characterization of cadmium-doped zinc oxide nanoparticles synthesized by precipitation method was studied.X-ray diffraction study confirmed the substitution of cadmium dopant without disturbing the basic wurtzite structure of zinc oxide.The average crystalline size,lattice constants and unit cell volume also increased up to4%of cadmium doping.Energy gaps of the samples were determined from the ultraviolet?visible absorption spectrum as well as Tauc’s plot which infers that the energy gap decreases with the increase of cadmium content.Fourier transformation infrared spectrum confirms the cadmium dopant through peak shifting from485to563cm?1.Photoluminescence spectrum also defines the cadmium dopant by intensity increase.The broad Raman peak at437cm?1indicates that the wurtzite structure of zinc oxide is weakened by5%cadmium doping.Field emission scanning electron microscope study also confirms the existence of particles in nanometer size and it indentifies the microstructure transformation from nanoparticles to jasmine flower-like structure on5%cadmium doping.

The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots

Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated. Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks. By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified. Furthermore,inter-subband spacing of electrons and holes are deduced.

Structure characterization,magnetic and photoluminescence properties of Mn doped ZnS nanocrystalline

Wurzite ZnS:Mn nanorods are synthesized via a solvothermal method by using ethylenediamine and water as mixed solvent.The diameters of the nanorods increase and the lengths decrease with the Mn concentration.High resolution transmission electron microscopic images illustrate that a few cubic ZnS:Mn nanoparticles arise along with hexagonal nanorods on high Mn concentration.The samples set off yellow-orange emission at 590 nm,characteristic of 4 T→ 6 A 1 transition of Mn 2+ at T d symmetry in ZnS.Electron spin resonance spectrum of the nanorods shows that high Mn concentrations produce a broad envelope,whereas six-line hyperfine appears for lower Mn concentrations.These results together with the magnetization curves indicate that all the ZnS:Mn samples are paramagnetic even down to 4 K,which suggests that the ZnS:Mn is not suitable for dilute magnetic semiconductor.

A facile hydrothermal preparation and photoluminescence study of ZnO micro/nanostructures on Zn foils

ZnO micro/nanostructures with various morphologies were grown via hydrothermal etching of Zn foil.Controlling the reaction temperature and time,rod-like,pencil-like,tube-like and flowerlike ZnO micro/nanostructures could be prepared directly on the Zn foil surface at temperatures 100-180℃ with excellent reproducibility.X-ray diffraction patterns indicated that these ZnO micro/nanostructures were hexagonal.Possible mechanisms for the variation of morphology are discussed.Moreover,photoluminescence spectra of the as-grown samples revealed that all of them consist of UV emission band at around 392 nm.

Electroluminescence performances of 1,1-bis(4-(N,N-dimethylamino)phenyl)-2,3,4,5-tetraphenylsilole based polymers in three cathode architectures

A new silole monomer with two 4-（N,N-dimethylamino）phenyl substitutions on silicon atom as designed and synthesized. Three copolymers PF-N-HPS1, PF-N-HPS10 and PF-N-HPS20 were then obtained by copolymerizations of 2,7-fluorene deriva- tives with the silole monomer at feed ratios of 1%, 10%, and 20%. Their UV-vis absorption, electrochemical, photolumines- cent, and electroluminescent （EL） properties were investigated. PF-N-HPS possessed HOMO levels of -5.25-5.58 eV, and showed green emissions. Using PF-N-HPS as the emissive layer, three different polymer light-emitting diodes were fabricated as device A with ITO/PEDOT/PF-N-HPS/A1, device B with ITO/PEDOT/PF-N-HPS/Ba/A1, and device C with ITO/PEDOT/ PF-N-HPS/TPBI/Ba/A1. For the device A, PF-N-HPS only showed very low EL efficiency of 0.06-0.33 cd/A, indicating that the A1 cathode could not inject electron efficiently to the emissive polymers containing the 4-（N,N-dimethylamino）phenyl groups. For the device B, low work function Ba supplied better electron injections, and the EL efficiency could be improved to 0.85-1.44 cd/A. TPBI with a deep HOMO level of -6.2 eV could enhance electron transport and hole blocking. Thus modi- fied recombinations and largely elevated EL efficiency of 4.56-7.96 cd/A were achieved for the device C. The separation of the emissive layer and metal cathode with the TPBI layer may also suppress exciton quenching at the cathode interface.

Synthesis,structure and photoluminescence of two porous metal-organoboron frameworks with rtl topology

Rigid trigonal tris(3-pyridylduryl)borane L was synthesized through four steps in good overall yield from readily available 1,2,4,5-tetramethylbenzene and was used to construct two porous cadmium(II) complexes Cd(L)X2.G(X = Cl,Br;G = guset molecules),1(Cd(L)Cl2.EtOH.iPrOH.3H2O) and 2(Cd(L)Br2.MeOH.C7H8.3H2O),under mild reaction conditions.1 and 2 are isostructural and featured with 3D porous metal-organoboron framewoks with rtl topology,in which L acts as a 3-connected node while a dicadmium motif serves as 6-connected node.In addition,1 and 2 exhibit strong photoluminescence in the visible region and 1 shows moderate adsorption ability of carbon dioxide at 273 K.

Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence （PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E^g and Alg modes of WS2 and MoS2 vary linearly with tem- perature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band- gap shrinkage of bulk semiconductor.

Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy

We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top of the valence band is split, as expected theoretically. This splitting of the valence band is peculiar to wurtzite InP and does not occur in zinc blende InP. We find the energy difference between the two bands to be 40 meV.

Structure and photoluminescence properties of InN films grown on porous silicon by MOCVD

In this work, indium nitride(InN) films were successfully grown on porous silicon(PS) using metal oxide chemical vapor deposition(MOCVD) method. Room temperature photoluminescence(PL) and field emission scanning electron microscopy(FESEM) analyses are performed to investigate the optical, structural and morphological properties of the InN/PS nanocomposites. FESEM images show that the pore size of InN/PS nanocomposites is usually less than 4 μm in diameter, and the overall thickness is approximately 40 μm. The InN nanoparticles penetrate uniformly into PS layer and adhere to them very well. Nitrogen(N) and indium(In) can be detected by energy dispersive spectrometer(EDS). An important gradual decrease of the PL intensity for PS occurs with the increase of oxidation time, and the PL intensity of PS is quenched after 24 h oxidization. However, there is a strong PL intensity of InN/PS nanocomposites at 430 nm(2.88 eV), which means that PS substrate can influence the structural and optical properties of the InN, and the grown InN on PS substrate has good optical quality.

A series of novel Zn(Ⅱ) and Mn(Ⅱ) metal-organic frameworks constructed by 2,4-bis-oxyacetate-benzoic acid: syntheses, structures and photoluminescence

A new carboxylic acid ligand, 2,4-bis-oxyacetate-benzoic acid(H3BOABA), was designed and introduced to construct novel metal-organic framework materials. [Zn Na(BOABA)(phen)(H2O)]·H2O(1), Zn Na(BOABA)(2), Mn3(BOABA)2(phen)2(3), [Mn2(BOABA)(OH)]·(H2O)2(4)(CCDC: 885138, 885137, 894225, 883094) were hydrothermally synthesized and characterized by elemental analysis, IR spectra and thermal gravimetric analyses. Crystal structures of the complexes were determined by single crystal X-ray diffraction method. Complex 1 is a one dimensional double edges non-interpenetrated framework decorated by the phen ligands on the surface. Complex 2 is an unique three dimensional open framework, consisting of Zn(II) and Na(I). Complex 3 is an unique double edges one dimensional MOF containing a [Mn3(BOABA)2(phen)2]n non-interpenetrated structure. Complex 4 is a two dimensional plane structure containing two Mn atoms in the same coordination environment. The interaction between four complexes and DNA were studied by Et Br fluorescence probe. Meanwhile, photoluminescence studies revealed that these four complexes display strong fluorescent emission bands in the solid state at room temperature.

Facet-dependent electrochemiluminescence spectrum of nanostructured ZnO

A facet-dependent electrochemiluminescence (ECL) behavior was found for nanostructured ZnO with different dominant exposing planes.The ECL spectrum of nanostructured ZnO was recorded by the emission scan mode with a fluorescence spectrometer and applied to investigate the difference of surface state for different crystal planes.Electronic structure calculations based on density functional theory were used to study the effect of crystal plane on the band structure and density of states.It revealed that the ECL emission was originated primarily from the recombination of electrons from Zn 4s and the hole from O 2p,which could be utilized to study the physical and chemical properties of surface structures of as-prepared nanostructured ZnO.A physical model was suggested to elucidate the differences of ECL spectra.A concept was proposed that the energy released as photons during ECL process of nanocrystalline semiconductor materials will be correlated with the energy level of active sites located at different crystal planes.

Interface effects on the electroluminescence spectra in amorphous-Si/silicon oxynitride multilayer structures

We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiOxNy multilayer with thickness of 4 nm both for the Si and SiOxNy sublayers. The EL spectral profile exhibits some obviously modulated features upon the barrier material. By adjusting the nitride/oxygen ratio in the barrier layer, the EL peak position can be tuned from 750 nm to 695 nm. From the result of the Raman and Fourier transform infrared results, the EL is attributed to the radiative recombination of electrons and holes in luminescent centers related to the interface. The different interface characteristics induce the shift of EL peak position.

Fabricating ultralow-power-excitable lanthanide-doped inorganic nanoparticles with anomalous thermo-enhanced photoluminescence behavior

Trivalent lanthanide(Ln^(3+))-doped luminescent nanoparticles(NPs)have been extensively investigated as deep-tissue-penetration visual bioimaging agents owing to their exceptional upconversion and near-infrared(NIR)luminescence upon irradiation of NIR light.However,in most cases,the power density of irradiation used for in vivo biological imaging is much higher than that of the reported maximum permissible exposure(MPE)value of NIR light,which inevitably does great damage to the living organisms under study and thus impedes the plausible clinical applications.Herein,by using a facile syringe pump-aided shell epitaxial growth method,we construct for the first time a new class of Ln^(3+)-doped KMgF_(3):Yb/Er@KMgF_(3)core-shell NPs that can be activated by utilizing a 980-nm xenon lamp or diode laser with an ultralow excitation power density down to 0.08 mW cm^(−2),a value that is approximately 4 orders of magnitude lower than the MPE value set by the American National Standards Institute(ANSI)for safe bioimaging in vivo.By combining the comparative spectroscopic investigations with atomic-resolved spherical aberration corrected transmission electron microscopy(AC-TEM)characterization,we find that the reduced crystallographic defects are the primary cause underlying such an ultralow-power-excitable feature of the KMgF_(3):Yb/Er@KMgF_(3)core-shell NPs.And,by the same token,the resultant KMgF_(3):Yb/Er@KMgF_(3)core-shell NPs also exhibit an anomalous thermo-enhanced photoluminescence(PL)behavior coupled with an excellent photothermal stability that cannot occur in other Ln^(3+)-doped core-shell NPs.These findings described here unambiguously pave a new way to prepare high-quality Ln^(3+)-doped luminescent NPs with desirable ultralow-power-excitable capability and photothermal stability for future biomedical applications.