用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件...用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件下 ,于常温下测量了光调制反射光谱 ,发现各单元的子带间跃迁能量最大变化范围可达80 me V .展开更多
O433’98020792GaAs表面Si-δ掺杂的调制光谱研究=Study of opticalproperties of surface Si-δ doping on GaAs(001)by PR[刊,中]/刘兴权,陆卫,陈效双,乔怡敏,史国良,沈学础(中科院上海技物所红外物理国家重点实验室.上海(200083))∥...O433’98020792GaAs表面Si-δ掺杂的调制光谱研究=Study of opticalproperties of surface Si-δ doping on GaAs(001)by PR[刊,中]/刘兴权,陆卫,陈效双,乔怡敏,史国良,沈学础(中科院上海技物所红外物理国家重点实验室.上海(200083))∥量子电子学报.-1997,14(4).-289-293利用光调制光谱与分子束外延结合的方法,原位测量GaAs(001)表面Si-δ掺杂结构样品。展开更多
本文报道了空间差分光调制反射光谱 ,指出了它与常规光调制反射谱的区别。与常规光调制反射光谱相比较 ,它具有更好的信噪比和灵敏度。利用该光谱方法对 Ga As/ Al Ga As量子阱的实验测量结果表明 ,空间差分光调制反射光谱具有丰富的光...本文报道了空间差分光调制反射光谱 ,指出了它与常规光调制反射谱的区别。与常规光调制反射光谱相比较 ,它具有更好的信噪比和灵敏度。利用该光谱方法对 Ga As/ Al Ga As量子阱的实验测量结果表明 ,空间差分光调制反射光谱具有丰富的光谱结构。展开更多
A distributed feedback laser with a wavelength of 2.8μm was used to measure the species produced by water vapor glow discharge.Only the absorption spectra of OH radicals and transient H2O molecules were observed usin...A distributed feedback laser with a wavelength of 2.8μm was used to measure the species produced by water vapor glow discharge.Only the absorption spectra of OH radicals and transient H2O molecules were observed using concentration modulation(CM)spectroscopy.The intensities and orientations of the absorption peaks change with the demodulation phase,but the direction of one absorption peak of H2O is always opposite to the other peaks.The different spectral orientations of OH and H2O reflect the increase or the decrease of the number of particles in the energy levels.If more transient species can be detected in the discharge process,the dynamics of excitation,ionization,and decomposition of H2O can be better studied.This study shows that the demodulation phase relationship of CM spectrum can be used to study the population change of molecular energy levels.展开更多
文摘用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件下 ,于常温下测量了光调制反射光谱 ,发现各单元的子带间跃迁能量最大变化范围可达80 me V .
文摘O433’98020792GaAs表面Si-δ掺杂的调制光谱研究=Study of opticalproperties of surface Si-δ doping on GaAs(001)by PR[刊,中]/刘兴权,陆卫,陈效双,乔怡敏,史国良,沈学础(中科院上海技物所红外物理国家重点实验室.上海(200083))∥量子电子学报.-1997,14(4).-289-293利用光调制光谱与分子束外延结合的方法,原位测量GaAs(001)表面Si-δ掺杂结构样品。
基金the National Natural Science Foundation of China(No.61625501,No.61427816)the Open Fund of the State Key Laboratory of High Field Laser Physics(SIOM)the Open Fund of the State Key Laboratory of Precision Spectroscopy。
文摘A distributed feedback laser with a wavelength of 2.8μm was used to measure the species produced by water vapor glow discharge.Only the absorption spectra of OH radicals and transient H2O molecules were observed using concentration modulation(CM)spectroscopy.The intensities and orientations of the absorption peaks change with the demodulation phase,but the direction of one absorption peak of H2O is always opposite to the other peaks.The different spectral orientations of OH and H2O reflect the increase or the decrease of the number of particles in the energy levels.If more transient species can be detected in the discharge process,the dynamics of excitation,ionization,and decomposition of H2O can be better studied.This study shows that the demodulation phase relationship of CM spectrum can be used to study the population change of molecular energy levels.
