380～780 nm总光谱辐射通量量值导出及不确定度评定

叙述了光源380~780 nm总光谱辐射通量量值导出的基本原理。该量值基于测量灯的总光通量及用变角辐射计测量灯的光谱辐射强度相对分布,溯源至总光通量国家基准和高温黑体光谱辐射照度国家基准。总光谱辐射通量量值导出的不确定度主要影响因素包括总光通量、光谱辐射标准灯、光谱辐射计自身特性、变角辐射计(机械部分)和测量系统重复性,扩展不确定度U=3.3%~1.6%,k=2。

光源光谱相似度模型的建立以及光谱对比分析

照明市场正处于采用以人为中心的照明(HCL)的早期阶段,照明的评价指标也由视觉指标维度向非视觉指标维度转变。传统的视觉指标,如显色指数、色温、色容差等已经无法满足对健康光的评价,需要引入新的指标评价体系。而光谱功率分布作为重要分析工具,也为建立健康光评价体系提供了思路。由于缺乏定量测量光源自然度的行业标准,本文针对与自然光谱的接近度拟合方法这一主题展开研究,提出了一种客观比较两种光源自然度的新方法,即余弦相似度对比法,不仅能便捷对比与自然光的拟合度分析,同时也能够快速分析出两种光源光谱的相似度。

Kinetics of defect formation in chemically vapor deposited （CVD） graphene during laser irradiation： The case of Raman investigation

The effect of laser irradiation on chemically vapor deposited （CVD） graphene was studied by analyzing the temporal evolution of Raman spectra acquired under various illumination conditions. The spectra showed that the normalized intensity of the defect-related peak increases with the square root of the exposure time and varies almost linearly with the laser power density. Furthermore, the hardness of graphene to radiation damage depends on its intrinsic structural quality. The results suggest that, contrary to the common belief, micro-Raman spectroscopy cannot be considered a noninvasive tool for the characterization of graphene. The experimental observations are compatible with a model that we derived from the interpretative approach of the Staebler-Wronski effect in hydrogenated amorphous silicon; this approach assumes that the recombination of photoexcited carriers induces the breaking of weak C-C bonds.