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基于旋转双棱镜的光束复合跟踪控制技术
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作者 王俊尧 宋延嵩 +1 位作者 刘洋 张季丰 《光子学报》 EI CAS CSCD 北大核心 2023年第2期225-236,共12页
提出一种基于旋转双棱镜的光束复合跟踪技术,用于取代传统伺服转台实现精密的光学跟踪。首先,建立双棱镜的光束偏转模型,详细推导光束偏转矢量与双棱镜转角间的转换关系,并对跟踪过程中的棱镜旋转非线性问题进行了分析。提出基于快速反... 提出一种基于旋转双棱镜的光束复合跟踪技术,用于取代传统伺服转台实现精密的光学跟踪。首先,建立双棱镜的光束偏转模型,详细推导光束偏转矢量与双棱镜转角间的转换关系,并对跟踪过程中的棱镜旋转非线性问题进行了分析。提出基于快速反射镜进行光轴修正的双棱镜光束复合跟踪方法,通过建立偏转光轴与光学基台间的扰动耦合关系,实现了对双棱镜转速的实时补偿,并改进棱镜控制器以提高光束控制性能。搭建实验系统,对旋转双棱镜复合跟踪技术进行验证。在动态跟踪实验中,采用改进控制器的双棱镜的控制精度明显提高,相较于比例-积分-微分控制器和线性自抗扰控制器,所提出的改进控制器使棱镜的控制精度分别提高58.33%和32.81%,并使跟踪误差由改进前的49.03μrad和38.88μrad降低为31.15μrad。开启视轴补偿后跟踪性能进一步提高,总跟踪误差降至7.49μrad,跟踪精度提高4.16倍。实验结果表明,光束复合控制能有效提高双棱镜的跟踪精度,验证了所提方法的有效性。 展开更多
关键词 旋转双棱镜 光束偏转 复合跟踪 光轴修正 跟踪精度
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A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm
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作者 赵宇航 朱骏 曹永峰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期889-892,共4页
The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical proximity effect. The CD and CD process window near the "dip",usually found near a pitch range of 1.1 to 1... The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical proximity effect. The CD and CD process window near the "dip",usually found near a pitch range of 1.1 to 1.4 wavelength/ NA (numerical aperture),is smaller when compared with other pitches. This is caused by inadequate imaging contrast for an unequal line and space grating. Although this effect is relatively well-known, its relationship with typical process condition parameters,such as the effective image blur caused by the photo-acid diffusion during the post exposure bake or the aberration in the imaging lens, has not been systematically studied. In this paper, we will examine the correlation between the image blur and the effect on the CD, including the decrease in the CD value (the depth of the "dip") and the CD process window. We find that both the decrease in the CD value and the focus latitude near the forbidden pitch correlate very well with the effective Gaussian image blur. Longer effective diffusion length correlates well with a smaller process window and a deeper CD "dip". We conclude that the dip depth is very sensitive to the change in image contrast. 展开更多
关键词 forbidden pitch effective resist diffusion length OPC OAI deep-UV
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