A new high nonlinear dispersion flattened photonic crystal fiber is proposed. This fiber has three-fold symmetry core. The doped region in the core and the big air-holes in the 1-st ring can make high nonlinearity in ...A new high nonlinear dispersion flattened photonic crystal fiber is proposed. This fiber has three-fold symmetry core. The doped region in the core and the big air-holes in the 1-st ring can make high nonlinearity in the PCF. And the small air-holes in the 1-st ring and the radial increasing diameters air-holes rings in cladding can be used to turn the dispersion properties of the PCF. We can achieve the optimized optical properties by carefully selecting the PCF's structure parameters. A PCF with flattened dispersion is obtained. The dispersion is within ±0.8 ps·nm-1·km-1 from 1.50 μm to 1.62 μm. The nonlinear coefficient is about 12.645 6 W-1·km-1, the fundamental mode area is about 10.257 9 μm2 and the birefringence is about 3.086 96×10-5 at 1.55 μm. This work may be useful for effective design and fabrication of dispersion flattened photonic crystal with high nonlinearities.展开更多
Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit....Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.展开更多
基金National Basic Research Program of China(973 Program)(2003CB314907) National Science Foundation ofCouncil of China(90604026 ,60310174) Postdoctoral Science Foundation of China(20060400059)
文摘A new high nonlinear dispersion flattened photonic crystal fiber is proposed. This fiber has three-fold symmetry core. The doped region in the core and the big air-holes in the 1-st ring can make high nonlinearity in the PCF. And the small air-holes in the 1-st ring and the radial increasing diameters air-holes rings in cladding can be used to turn the dispersion properties of the PCF. We can achieve the optimized optical properties by carefully selecting the PCF's structure parameters. A PCF with flattened dispersion is obtained. The dispersion is within ±0.8 ps·nm-1·km-1 from 1.50 μm to 1.62 μm. The nonlinear coefficient is about 12.645 6 W-1·km-1, the fundamental mode area is about 10.257 9 μm2 and the birefringence is about 3.086 96×10-5 at 1.55 μm. This work may be useful for effective design and fabrication of dispersion flattened photonic crystal with high nonlinearities.
文摘Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.
