期刊文献+
共找到9篇文章
< 1 >
每页显示 20 50 100
GB01S、GB02S光长转换期研究
1
作者 李继开 李振宇 +1 位作者 景斌 郎育农 《盐碱地利用》 1993年第2期24-27,共4页
光敏感核不育系GB01S和GB02S在大洼县(北纬40°59′、东经122°04′)种植,其育性的光长转换时间为14:00—14:30小时之间。分期播种试验证明,GB01S和GB03S在大洼县有20天以上的稳定不育期,GB02S有15天以上的稳定不育期。
关键词 水稻 敏感核不育 光长转换 杂交
下载PDF
水稻光敏核不育系GB028S光温反应研究 被引量:2
2
作者 李振宇 王志兴 陈广红 《垦殖与稻作》 2000年第4期1-3,共3页
水稻光敏核不育系GB0 2 8S的育性表达受光长及温度影响 ,其温度敏感期在出穗前 1 5d左右 ,即在花粉母细胞形成致减数分裂期 ;不育起点温度为 2 2℃ ,可育临界高温大于 2 9℃。日均温度在 2 2~ 3 0℃之间 ,其育性主要受光长控制 ,可育... 水稻光敏核不育系GB0 2 8S的育性表达受光长及温度影响 ,其温度敏感期在出穗前 1 5d左右 ,即在花粉母细胞形成致减数分裂期 ;不育起点温度为 2 2℃ ,可育临界高温大于 2 9℃。日均温度在 2 2~ 3 0℃之间 ,其育性主要受光长控制 ,可育临界光长为 1 3 5h ,光长转换期为 1 3 5~ 1 4 0h。GB0 2 8S在光长 1 2 0~ 1 4 0h条件下 ,结实率随温度升高而降低。在光长大于 1 4 5h ,温度高于2 2℃的条件下 ,花粉败育率和自交不实率均达到 99 9%以上 ,在辽宁的稳定不育期为 2 5~ 3 5d。 展开更多
关键词 水稻 花敏核不育系 临界温度 光长转换 育性表达
下载PDF
Performance analysis of optical burst switching node with limited wavelength conversion capabilities 被引量:1
3
作者 许毅 史开源 范戈 《Journal of Central South University》 SCIE EI CAS 2009年第5期794-801,共8页
The systematical and scalable frameworks were provided for estimating the blocking probabilities under asynchronous traffic in optical burst switching(OBS) nodes with limited wavelength conversion capability(LWCC) . T... The systematical and scalable frameworks were provided for estimating the blocking probabilities under asynchronous traffic in optical burst switching(OBS) nodes with limited wavelength conversion capability(LWCC) . The relevant system architectures of limited range and limited number of wavelength converters(WCs) deployed by a share-per-fiber(SPF) mode were developed,and the novel theoretical analysis of node blocking probability was derived by combining the calculation of discouraged arrival rate in a birth-death process and two-dimensional Markov chain model of SPF. The simulation results on single node performance verify the accuracy and effectiveness of the analysis models. Under most scenarios,it is difficult to distinguish the plots generated by the analysis and simulation. As the conversion degree increases,the accuracy of the analysis model worsens slightly. However,the utmost error on burst loss probability is far less than one order of magnitude and hence,still allows for an accurate estimate. Some results are of actual significance to the construction of next-generation commercial OBS backbones. 展开更多
关键词 optical burst switching (OBS) limited range wavelength conversion (LRWC) wavelength converter burst contention burst loss probability
下载PDF
Hybrid WDM/TDM PON system employing an all-optical wavelength converter
4
作者 何炜 Liu Deming +1 位作者 Qian Yinbo Liu Hai 《High Technology Letters》 EI CAS 2012年第4期371-375,共5页
A new hybrid WDM/TDM passive optical network (PON) implemented by using all-optical wavelength converters (AOWCs) is proposed. The AOWCs are based on the cross-gain modulation (XGM) effect of the semiconductor o... A new hybrid WDM/TDM passive optical network (PON) implemented by using all-optical wavelength converters (AOWCs) is proposed. The AOWCs are based on the cross-gain modulation (XGM) effect of the semiconductor optical amplifier (SOA). Moreover, the feasibility of this sys- tem is experimentally demonstrated by evaluating the impacts of the optical wavelength conversion, time domain waveforms, eye diagrams and bit-error-rate (BER) in AOWC. The results show that the proposal will be a promising solution for the next generation access networks. 展开更多
关键词 passive optical network (PON) wavelength division multiplexer (WDM) all-optical wavelength converter AOWC) cross-gain modulation (XGM)
下载PDF
Novel Transparent Wavelength Converter Based on Four-wave Mixing in a SOA Fiber Ring Laser
5
作者 CHINan ZHENGYuan 《Semiconductor Photonics and Technology》 CAS 2000年第3期139-143,共5页
A fully transparent wavelength converter is demonstrated based on four-wave mixing (FWM) in a semiconductor optical amplifier-fiber ring laser. Two WDM signals at the wavelength of 1 549.3 nm and 1 550.9 nm are respec... A fully transparent wavelength converter is demonstrated based on four-wave mixing (FWM) in a semiconductor optical amplifier-fiber ring laser. Two WDM signals at the wavelength of 1 549.3 nm and 1 550.9 nm are respectively converted simultaneously with a maximum wavelength shift of 6.4 nm for the first time. High nondegeneration FWM is observed for a detuning range over 3 THz. This scheme has better conversion efficiency than that of conventional single semiconductor optical amplifier converter. 展开更多
关键词 Semiconductor optical amplifier Four-wave mixing Wavelength conversionx
下载PDF
A Novel Optical Burst Mesh Network with Optical Time Slot Interchange at Source Nodes 被引量:1
6
作者 熊前进 邓宁 +2 位作者 薛青松 李沫 龚国伟 《China Communications》 SCIE CSCD 2013年第4期70-78,共9页
In this paper, we propose an optical burst network architecture supporting the ge- netic mesh topology. The intermediate node architecture of the mesh network can be the same with current wavelength switching Wave- le... In this paper, we propose an optical burst network architecture supporting the ge- netic mesh topology. The intermediate node architecture of the mesh network can be the same with current wavelength switching Wave- length Division Multiplexing (WDM) net- works, and thus can reuse existing deployed infrastructure. We employ a novel Optical Time Slot Interchange (OTSI) at the source nodes for the first time to mitigate the burst conten- tion and to increase the bandwidth utilization. Time- and wavelength-domain reuse in the OTSI significantly saves optical components and red- uces blocking probability. 展开更多
关键词 SDN OTN MPLS OTSI ROADM Optical Burst Mesh Network WDM WSS
下载PDF
Reveal the growth mechanism in perovskite films via weakly coordinating solvent annealing 被引量:2
7
作者 Yafei Wang Detao Liu +9 位作者 Peng Zhang Ting Zhang Waseem Ahmad Xiangxiao Ying Feng Wang lian Li Li Chen liang Wu Zhi David Chen Shibin Li 《Science China Materials》 SCIE EI CSCD 2018年第12期1536-1548,共13页
In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in... In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in the one-step deposition. IPA solvent annealing(IPA SA) of PbI2 films was carried out at different temperatures. The grain size,compactness, roughness and morphology of PbI2 and CH3 NH3 PbI3 films were seriously affected by annealing methods. Similarly, weakly coordinating solvent annealing process was also employed to anneal all inorganic CsPbI3 perovskite in a one-step method. A continuous and dense CsPbI3 film with uniform grain size was obtained. We recognized that weakly coordinating solvent annealing for perovskite could regulate the dissolution-recrystallization process via controlling the volume of residual solvent in perovskite intermediate films. The power conversion efficiency(PCE) of conventional CH3 NH3 PbI3 perovskite solar cells(PSCs)reached 17.4% and that of CsPbI3 PSCs reached 2.5% based on this sequential IPA SA process. 展开更多
关键词 perovskite solar cells solvent annealing weak coordinating solvent recrystaUization
原文传递
Wavelength conversion based on nonlinear polarization rotation in gain transparent SOA
8
作者 豆荣社 余重秀 +4 位作者 王葵如 王拥军 桑新柱 张琦 颜玢玢 《Optoelectronics Letters》 EI 2012年第4期289-292,共4页
We describe an all-optical wavelength conversion scheme for 1310 nm to 1550 nm based on nonlinear polarization rotation in a gain-transparent semiconductor optical amplifier (GT-SOA) which brings in the assistant li... We describe an all-optical wavelength conversion scheme for 1310 nm to 1550 nm based on nonlinear polarization rotation in a gain-transparent semiconductor optical amplifier (GT-SOA) which brings in the assistant light to improve the property of the converted light. From the SOA carder density equations, the 1310 nm-to-1550 nm wavelength conversion scheme is analyzed by the Jones matrix. The phase shift between TE and TM modes and the converted light are simulated at bit rate of 30 Gbit/s. We also analyze the influence of the input signal power, the injected current and the assistant light power on the extinction ratio of the converted li~,ht. 展开更多
关键词 POLARIZATION
原文传递
Novel internal photoemission in manganite/ZnO heterostructure 被引量:2
9
作者 ZHANG JiaQi HUANG KeKe +3 位作者 SI WenZhe WU XiaoFeng CHENG Gang FENG ShouHua 《Science China Chemistry》 SCIE EI CAS 2013年第5期583-587,共5页
A novel photovoltaic phenomenon of internal photoemission was found in a low cost manganite La0.62Ca0.29K0.09MnO3 (LCKMO)/zinc oxide (ZnO) heterojunction bilayers grown on ITO substrate by pulsed laser deposition ... A novel photovoltaic phenomenon of internal photoemission was found in a low cost manganite La0.62Ca0.29K0.09MnO3 (LCKMO)/zinc oxide (ZnO) heterojunction bilayers grown on ITO substrate by pulsed laser deposition (PLD) at relative low growth temperature. The heterostructure ITO/LCKMO/ZnO/A1 exhibits reproducible rectifying characteristics and light cur- rent under continuous laser irradiation of 2 = 325 nm. We report here the influence of LCKMO/ZnO bilayers' thickness on the electrical and photoelectric properties of the heterostructure at room temperature. The power conversion efficiency (PCE) is achieved when the LCKMO and ZnO layers are thin enough or the full space charge layer is sufficient. We obtained the maximum value of PCE of 0.0145% when the thicknesses of LCKMO and ZnO layers are 25 and 150 nm, respectively. The open circuit voltage is 0.04 V under this condition due to the internal photoemission. 展开更多
关键词 HETEROJUNCTION PHOTOELECTRIC MANGANITE ZNO
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部