A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupl...A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber.展开更多
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded...We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.展开更多
An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase curr...An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.展开更多
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furt...Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.展开更多
文摘A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber.
文摘We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
文摘An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.
文摘Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.
