A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device...A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated.RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed.Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.展开更多
文摘A new material structure with Al 0.22Ga 0.78As/In 0.15Ga 0.85As/GaAs emitter spacer layer and GaAs/In 0.15- Ga 0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated.RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed.Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.
