0101855双层介质基片上的非对称共面线[刊]/阮成礼//通信学报.—2000,21(9).—86~90(K)Y2000-62474-789 0101856Gb 规模 DRAM 用的低温(Ba,Sr)TiO<sub>3</sub>电容器过程集成(LTB)技术=Low temperature(Ba.Sr)Ti...0101855双层介质基片上的非对称共面线[刊]/阮成礼//通信学报.—2000,21(9).—86~90(K)Y2000-62474-789 0101856Gb 规模 DRAM 用的低温(Ba,Sr)TiO<sub>3</sub>电容器过程集成(LTB)技术=Low temperature(Ba.Sr)TiO<sub>3</sub> capaci-tor process integration(LTB)technology for gigabitscaled DRAMs[会,英]/Hieda,K.& Eguchi,K.//1999 IEEE International Electron Devices Meeting.—789~792(PC)展开更多
文摘0101855双层介质基片上的非对称共面线[刊]/阮成礼//通信学报.—2000,21(9).—86~90(K)Y2000-62474-789 0101856Gb 规模 DRAM 用的低温(Ba,Sr)TiO<sub>3</sub>电容器过程集成(LTB)技术=Low temperature(Ba.Sr)TiO<sub>3</sub> capaci-tor process integration(LTB)technology for gigabitscaled DRAMs[会,英]/Hieda,K.& Eguchi,K.//1999 IEEE International Electron Devices Meeting.—789~792(PC)