A plant＇s capacity to compensate for pest damage as a function of resource availability needs to be predictable in order to apply biocontrol agents effectively. In this research, it was hypothesized that a weedy plan...A plant＇s capacity to compensate for pest damage as a function of resource availability needs to be predictable in order to apply biocontrol agents effectively. In this research, it was hypothesized that a weedy plant species＇ capacity to compensate for defoliation is related to how resource availability affects a plant＇s growth trajectory. Growth rate trajectory is defined as the percent change in relative growth rate or the slope of a plant＇s relative growth rate. 90 Abutilon theophrasti, a common weed species, in cultivated fields of corn and soybean, grew in a greenhouse for 70 d under three nitrogen （N） fertilization treatments. ＂Unfertilized＂ plants were not fertilized, ＂bulk＂ fertilized plants received 0.6 g N on day 15 and ＂exponential＂ fertilized plants received a total of 0.6 g N supplied at an exponential rate of 10% per day with a starting concentration of 0.02 g N on day 15. On day 25, 15 plants in each N treatment had 75% of total leaf area removed. Biomass and reproductive compensation were determined after 50 d and 70 d of growth. Results showed that bulk plants had the greatest absolute growth, but also the greatest decline in growth rates and the least capacity for compensation. Unfertilized plants had the lowest absolute growth, but declines in growth rates were similar to bulk plants with only a slightly greater compensatory capacity. Exponential plants had intermediate absolute growth, but the least decline in growth rates and the greatest capacity for compensation. This experiment indicates that a plant＇s growth rate trajectory, and not high or low relative growth rates or N availability per se, can be used to predict a weedy plant＇s capacity to compensate for herbivory, and has implications for biocontrol of weedy species.展开更多
All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various...All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.展开更多
文摘A plant＇s capacity to compensate for pest damage as a function of resource availability needs to be predictable in order to apply biocontrol agents effectively. In this research, it was hypothesized that a weedy plant species＇ capacity to compensate for defoliation is related to how resource availability affects a plant＇s growth trajectory. Growth rate trajectory is defined as the percent change in relative growth rate or the slope of a plant＇s relative growth rate. 90 Abutilon theophrasti, a common weed species, in cultivated fields of corn and soybean, grew in a greenhouse for 70 d under three nitrogen （N） fertilization treatments. ＂Unfertilized＂ plants were not fertilized, ＂bulk＂ fertilized plants received 0.6 g N on day 15 and ＂exponential＂ fertilized plants received a total of 0.6 g N supplied at an exponential rate of 10% per day with a starting concentration of 0.02 g N on day 15. On day 25, 15 plants in each N treatment had 75% of total leaf area removed. Biomass and reproductive compensation were determined after 50 d and 70 d of growth. Results showed that bulk plants had the greatest absolute growth, but also the greatest decline in growth rates and the least capacity for compensation. Unfertilized plants had the lowest absolute growth, but declines in growth rates were similar to bulk plants with only a slightly greater compensatory capacity. Exponential plants had intermediate absolute growth, but the least decline in growth rates and the greatest capacity for compensation. This experiment indicates that a plant＇s growth rate trajectory, and not high or low relative growth rates or N availability per se, can be used to predict a weedy plant＇s capacity to compensate for herbivory, and has implications for biocontrol of weedy species.
基金supported by the National Natural Science Foundation of China(51572205,11674258 and 51802093)the Joint Fund of Ministry of Education for Equipment Pre-research the Fundamental Research(6141A02022262)+1 种基金the Excellent Dissertation Cultivation Funds of Wuhan University of Technology(2018-YS-001)the Fundamental Research Funds for the Central Universities(2019zy-007)。
文摘All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.
