The dynamic recrystallization behavior of 7085 aluminum alloy during hot compression at various temperatures （573？723 K） and strain rates （0.01-10 s^-1） was studied by electron back scattered diffraction （EBSD...The dynamic recrystallization behavior of 7085 aluminum alloy during hot compression at various temperatures （573？723 K） and strain rates （0.01-10 s^-1） was studied by electron back scattered diffraction （EBSD）, electro-probe microanalyzer （EPMA） and transmission electron microscopy （TEM）. It is shown that dynamic recovery is the dominant softening mechanism at high Zener？Hollomon （Z） values, and dynamic recrystallization tends to appear at low Z values. Hot compression with ln Z=24.01 （723 K, 0.01 s？1） gives rise to the highest fraction of recrystallization of 10.2%. EBSD results show that the recrystallized grains are present near the original grain boundaries and exhibit similar orientation to the deformed grain. Strain-induced boundary migration is likely the mechanism for dynamic recrystallization. The low density of Al3Zr dispersoids near grain boundaries can make contribution to strain-induced boundary migration.展开更多
Information on lead redistribution and speciation changes in anthrosphere can help to analyze the whole lead cycle on the earth. Lead life cycle was traced based on the concepts of anthropogenic transfer and transform...Information on lead redistribution and speciation changes in anthrosphere can help to analyze the whole lead cycle on the earth. Lead life cycle was traced based on the concepts of anthropogenic transfer and transformation. Lead transfer and the distribution of chemical species throughout the anthropogenic flow were identified in 2010 in China. The results show that 1.85 Mt lead ore was consumed(besides 1.287 Mt imported concentrated ore and 1.39 Mt lead scraps. After undergoing transformations, 3.53 Mt lead entered end services in chemical species of Pb, Pb O2 and PbSO4, altogether accounting for over 80% of the total lead products. Finally, 2.10 Mt ore was emitted into the environment in such species as PbSO4(26%), PbO(19%) and Pb(15%). Lead transfer begins in primary raw material sectors, and then transfers to manufacturing sectors. Lead provides services mainly in such industrial sectors as transportation, electrical power and buildings or construction.展开更多
All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various...All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.展开更多
基金Project(2012CB619500)supported by the National Basic Research Program of China
文摘The dynamic recrystallization behavior of 7085 aluminum alloy during hot compression at various temperatures （573？723 K） and strain rates （0.01-10 s^-1） was studied by electron back scattered diffraction （EBSD）, electro-probe microanalyzer （EPMA） and transmission electron microscopy （TEM）. It is shown that dynamic recovery is the dominant softening mechanism at high Zener？Hollomon （Z） values, and dynamic recrystallization tends to appear at low Z values. Hot compression with ln Z=24.01 （723 K, 0.01 s？1） gives rise to the highest fraction of recrystallization of 10.2%. EBSD results show that the recrystallized grains are present near the original grain boundaries and exhibit similar orientation to the deformed grain. Strain-induced boundary migration is likely the mechanism for dynamic recrystallization. The low density of Al3Zr dispersoids near grain boundaries can make contribution to strain-induced boundary migration.
基金Project(41171361)supported by the National Natural Science Foundation of China
文摘Information on lead redistribution and speciation changes in anthrosphere can help to analyze the whole lead cycle on the earth. Lead life cycle was traced based on the concepts of anthropogenic transfer and transformation. Lead transfer and the distribution of chemical species throughout the anthropogenic flow were identified in 2010 in China. The results show that 1.85 Mt lead ore was consumed(besides 1.287 Mt imported concentrated ore and 1.39 Mt lead scraps. After undergoing transformations, 3.53 Mt lead entered end services in chemical species of Pb, Pb O2 and PbSO4, altogether accounting for over 80% of the total lead products. Finally, 2.10 Mt ore was emitted into the environment in such species as PbSO4(26%), PbO(19%) and Pb(15%). Lead transfer begins in primary raw material sectors, and then transfers to manufacturing sectors. Lead provides services mainly in such industrial sectors as transportation, electrical power and buildings or construction.
基金supported by the National Natural Science Foundation of China(51572205,11674258 and 51802093)the Joint Fund of Ministry of Education for Equipment Pre-research the Fundamental Research(6141A02022262)+1 种基金the Excellent Dissertation Cultivation Funds of Wuhan University of Technology(2018-YS-001)the Fundamental Research Funds for the Central Universities(2019zy-007)。
文摘All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.
