设H是一个双代数,B是带有H弱作用的代数,σ:H(?)H→B和τ:H(?)H→B都是k-双线性映射.首先我们给出了B_χ^(#_σ^τ)H成为双代数的充分必要条件,此双代数带有扭曲交叉积B#_σ~τH和冲余积B×H,其中B是H上的余模余代数.此双代数是由Ra...设H是一个双代数,B是带有H弱作用的代数,σ:H(?)H→B和τ:H(?)H→B都是k-双线性映射.首先我们给出了B_χ^(#_σ^τ)H成为双代数的充分必要条件,此双代数带有扭曲交叉积B#_σ~τH和冲余积B×H,其中B是H上的余模余代数.此双代数是由Radford首次在文献[8]中提出,后来Doi and Takeuchi又在文献[4]和[9]中进一步推广而得到的.然后我们对此双代数进行刻画并研究其基本性质.最后我们给出了此双代数成为Hopf代数的充分条件.展开更多
Let （H, a） be a monoidal Hom-bialgebra and （B,p） be a left （H, a）-Hom-comodule coalgebra. The new monoidal Hom-algebra B#y H is constructed with a Hom-twisted product Ba[H] and a. B × H Hom-smash coproduc...Let （H, a） be a monoidal Hom-bialgebra and （B,p） be a left （H, a）-Hom-comodule coalgebra. The new monoidal Hom-algebra B#y H is constructed with a Hom-twisted product Ba[H] and a. B × H Hom-smash coproduct. Moreover, a sufficient and necessary condition for B#y / to be a monoidal Hom-bialgebra is given. In addition, let （H, a） be a Hom-σ- Hopf algebra with Hom-〇 --antipode SH, and a sufficient condition for this new monoidal Hom-bialgebra B#y H with the antipode S defined by S（b×h）=（1B×SH（a^-1）b（-1）））（SB（b（0））×1H to be a monoidal Hom-Hopf algebra is derived.展开更多
Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remane...Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.展开更多
基金Supported by the FNS of China(10871042)the SRFDPHE(20060286006)the EMSTRKF of China(108154).
文摘设H是一个双代数,B是带有H弱作用的代数,σ:H(?)H→B和τ:H(?)H→B都是k-双线性映射.首先我们给出了B_χ^(#_σ^τ)H成为双代数的充分必要条件,此双代数带有扭曲交叉积B#_σ~τH和冲余积B×H,其中B是H上的余模余代数.此双代数是由Radford首次在文献[8]中提出,后来Doi and Takeuchi又在文献[4]和[9]中进一步推广而得到的.然后我们对此双代数进行刻画并研究其基本性质.最后我们给出了此双代数成为Hopf代数的充分条件.
基金The National Natural Science Foundation of China(No.11371088,10871042,11571173)the Fundamental Research Funds for the Central Universities(No.KYLX15_0105)
文摘Let （H, a） be a monoidal Hom-bialgebra and （B,p） be a left （H, a）-Hom-comodule coalgebra. The new monoidal Hom-algebra B#y H is constructed with a Hom-twisted product Ba[H] and a. B × H Hom-smash coproduct. Moreover, a sufficient and necessary condition for B#y / to be a monoidal Hom-bialgebra is given. In addition, let （H, a） be a Hom-σ- Hopf algebra with Hom-〇 --antipode SH, and a sufficient condition for this new monoidal Hom-bialgebra B#y H with the antipode S defined by S（b×h）=（1B×SH（a^-1）b（-1）））（SB（b（0））×1H to be a monoidal Hom-Hopf algebra is derived.
基金supported by the National Natural Science Foundation of China(90922034,21131002,and 21201075)the Specialized Research Fund for the Doctoral Program of Higher Education(20110061130005)
文摘Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.
