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Impulse-coupling coefficients from a pulsed-laser ablation of semiconductor GaAs
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作者 LIU Ai-Hua 《Nuclear Science and Techniques》 SCIE CAS CSCD 2006年第4期217-221,共5页
Impulse-coupling coefficients from 1.06 - μ m, 10-ns Nd:YAG pulsed-laser radiation to GaAs targets with different areas were measured using the ballistic pendulum method in the laser power density ranging from 4.0 &#... Impulse-coupling coefficients from 1.06 - μ m, 10-ns Nd:YAG pulsed-laser radiation to GaAs targets with different areas were measured using the ballistic pendulum method in the laser power density ranging from 4.0 × 108 to 5.0 × 109 W·cm-2. A detonation wave model of the plasma was established theoretically. The expansion process of plasma after the laser pulse ends is described in detail, and the impulse-coupling coefficients from pulsed laser with different energies to GaAs with different areas were calculated using the given model. It is found that the theoretical results agree well with the experimental data. 展开更多
关键词 激光-材料相互作用 冲击式联接 镓砷半导体 激光爆破
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