穿刺翻边冲压功的计算

介绍了穿刺翻边冲压功的两种计算方法:计算法和图解法。

High Voltage High Frequency Power Transformer for Pulsed Power Applications

This paper presents a new topology for a High Voltage （HV） 50 kV, High Frequency （HF） 20 kHz, multi-cored transformer suitable for use in pulsed power application systems. The main requirements are： high voltage capability, small size and weight. The HV, HF transformer is the main critical block of a high frequency power converter system. The transformer must have high electrical efficiency and in the proposed approach has to be optimized by the number of the cores. The transformer concept has been investigated analytically and through software simulations and experiments. This paper introduces the transformer topology and discusses the design procedure. Experimental measurements to predict core losses are also presented. The losses of epoxy coated nanocrystalline are compared to the losses in a new uncoated core.

Optimization of three-dimensional boiling enhancement structure at evaporation surface for high power light emitting diode

A theoretical model of phase change heat sink was established in terms of thermal resistance network. The influence of different parameters on the thermal resistance was analyzed and the crucial impact factors were determined. Subsequently, the forming methods including ploughing-extrusion and stamping method of boiling enhancement structure at evaporation surface were investigated, upon which three-dimensional microgroove structure was fabricated to improve the efficiency of evaporation. Moreover, the crucial parameters related to the fabrication of miniaturized phase change heat sink were optimized. The heat transfer performance of the heat sink was tested. Results show that the developed phase change heat sink has excellent heat transfer performance and is suitable for high power LED applications.

High Voltage Pulse Power and the Technics for the Capacitor Power-Storage Type

Lower hybrid wave （LHW）, electro cyclotron （EC） and neutral beam injection （NBI） etc. are the important methods of auxiliary heating. They would be devoted to the HL-2A tokamak step by step. In order to satisfy the debug of each system and the need of the experiment, the system should be equipped with high voltage pulse power （HVPP） according to the requirement.

Integral Transformation of the Pulse Function for High Voltage Technique

One function for approximating pulse quantities in high voltage technique is presented in this paper. The function derivative, its integral, as well as its Laplace and Fourier transform are obtained analytically. Integral transformations of the pulse function are needed in frequency domain calculations of lightning induced effects in the case of a lossy ground. The pulse function having adequately chosen parameters is applied in lightning discharge modeling for lightning electromagnetic field calculation, and the results are in agreement with the results from literature. The choice of function parameters is based on their influence on the pulse waveshape which is presented in the paper. Numerical results for the Fourier transform are presented for different usually used pulse functions. The advantages of this function are simple choice of its parameters according to the desired waveshape characteristics and analytical solutions useful in lightning discharge modeling, electromagnetic field computation and induced effects calculations.

Memristive device with highly continuous conduction modulation and its underlying physical mechanism for electronic synapse application

Emerging memristors can be used as artificial synapses for emulating memory and computational functions.In this work,inspired by the memristive properties of tantalum dioxide,we designed a memristor with a structure of TiN/Ta2O5-x/HfxZr1-xO2(x=0.5)/Pt(TTHZOP).The device conductance can be continuously tuned by adjusting the voltage pulse parameters(i.e.,amplitude,width,and number)of voltage sweeps.Furthermore,for both of negative and positive parts,the current-voltage curves of the sweep cycle appear to better adjust the gradual distribution in successive twenty cycles.According to the fine fitting results of twenty positive and negative current-voltage(I-V)curves,the probability of an electron jumping over an energy barrier and the width of the energy barrier were analyzed in detail.It is found that the electron tunneling mechanism at the interface is responsible for gradual conduction change under successive external electrical stimulation consisting of both bulk and interface effects.The proposed TTHZOP memristor is a promising candidate in potential applications that mimic artificial biosynaptic adaptation and analog brain computation.