An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor ...An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22gm-wide and 2mm-long epilayer-up bonded device.展开更多
We report on a high power output quasi-continuous-wave nanosecond optical parametric generator （OPG） of congruent periodically poled lithium niobate （PPLN） pumped by a 1 064 nm acousto-optically Q-switched Nd:YVO4...We report on a high power output quasi-continuous-wave nanosecond optical parametric generator （OPG） of congruent periodically poled lithium niobate （PPLN） pumped by a 1 064 nm acousto-optically Q-switched Nd:YVO4 laser （duration: 70 ns,repetition rate:45 kHz,spatial beam quality M2<1.3）.The OPG consists of a 38.7 mm long PPLN crystal with a domain period of 28.93 μm. With 5.43 W of average pump power the maximum average output power is 991 mW at 1 517.1 nm signal wave of the PPLN OPG.展开更多
Through optimizing the tensile-strained single quantum well （SQW） epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW se...Through optimizing the tensile-strained single quantum well （SQW） epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and lcm-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks, the laser bars achieve an output power of 259W in quasi-continuouswave （200μs pulse width and 2% duty cycles） operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup,and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807.8nm and full width at half maximum of 2.4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5° ,respectively.展开更多
文摘An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22gm-wide and 2mm-long epilayer-up bonded device.
文摘We report on a high power output quasi-continuous-wave nanosecond optical parametric generator （OPG） of congruent periodically poled lithium niobate （PPLN） pumped by a 1 064 nm acousto-optically Q-switched Nd:YVO4 laser （duration: 70 ns,repetition rate:45 kHz,spatial beam quality M2<1.3）.The OPG consists of a 38.7 mm long PPLN crystal with a domain period of 28.93 μm. With 5.43 W of average pump power the maximum average output power is 991 mW at 1 517.1 nm signal wave of the PPLN OPG.
文摘Through optimizing the tensile-strained single quantum well （SQW） epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and lcm-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks, the laser bars achieve an output power of 259W in quasi-continuouswave （200μs pulse width and 2% duty cycles） operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup,and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807.8nm and full width at half maximum of 2.4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5° ,respectively.
